IXTH130N20T [IXYS]
N-Channel Enhancement Mode Avalanche Rated; N沟道增强模式额定雪崩
| 型号： | IXTH130N20T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | N-Channel Enhancement Mode Avalanche Rated |
| 文件： | 总5页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
TrenchHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH130N20T
VDSS = 200V
ID25 = 130A
RDS(on) ≤ 16mΩ
Symbol
Test Conditions
Maximum Ratings
TO-247
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1MΩ
200
200
V
V
VGSM
Transient
± 30
V
ID25
ILRMS
IDM
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
130
75
320
A
A
A
G
(TAB)
D
S
IA
EAS
TC = 25°C
TC = 25°C
4
1.0
A
J
G = Gate
D = Drain
S = Source
TAB = Drain
dv/dt
Pd
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
10
V/ns
W
830
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
300
260
°C
°C
Features
z Unclamped Inductive Switching (UIS)
rated
Md
Mounting torque
1.13/10 Nm/lb.in
z Low package inductance
- easy to drive and to protect
z 175 °C Operating Temperature
Weight
6
g
Advantages
z
Easy to mount
Space savings
High Power density
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
Applications
z DC-DC converters
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 1mA
VGS = ± 20V, VDS = 0V
200
V
V
z
Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
2.5
5.0
± 200
nA
z AC motor control
z High speed power switching
applications
IDSS
VDS = VDSS
VGS = 0V
25
500
μA
μA
TJ = 150°C
z DC choppers
z Battery chargers
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1
16 mΩ
DS99846(06/07)
© 2007 IXYS CORPORATION, All rights reserved
IXTH130N20T
Symbol
Test Conditions
Characteristic Values
TO-247 Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10V; ID = 60A, Note 1
70
120
S
Ciss
Coss
Crss
8800
970
pF
pF
pF
∅ P
1
2
3
VGS = 0V, VDS = 25V, f = 1MHz
122
td(on)
tr
td(off)
tf
Resistive Switching, 25°C
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2.0Ω (External)
25
18
57
22
ns
ns
ns
ns
e
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
150
44
nC
nC
nC
VGS= 10V, VDS = 0.5 • VDSS, ID = 25A
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qgd
42
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCS
0.18 °C/W
°C/W
0.21
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Source-Drain Diode
∅P 3.55
3.65
.140 .144
Symbol
Test Conditions
Characteristic Values
Q
5.89
6.40 0.232 0.252
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
130
320
1.0
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IS
VGS = 0V
A
A
ISM
VSD
trr
Pulse width limited by TJM
IF = 50A, VGS = 0V, Note 1
V
IF = 65A, -di/dt = 100A/μs
150
ns
VR = 100V, VGS = 0V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %;
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTH130N20T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
130
120
110
100
90
280
240
200
160
120
80
V
= 10V
V
= 10V
GS
GS
9V
8V
8V
7V
7V
80
70
6V
60
50
6V
5V
40
30
20
40
5V
10
0
0
0
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2
0
2
4
6
8
10
12
14
16
18
20
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 65A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
3.5
3.0
2.5
2.0
1.5
1.0
0.5
130
120
110
100
90
V
= 10V
GS
V
= 10V
GS
8V
7V
I
= 130A
D
6V
80
70
I
= 65A
D
60
50
40
5V
30
20
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 65A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
90
80
70
60
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
External Lead Current Limit
V
= 10V
GS
T = 175ºC
J
T = 25ºC
J
-50
-25
0
25
50
75
100
125
150
175
40
80
120
160
200
240
280
ID - Amperes
TC - Degrees Centigrade
© 2007 IXYS CORPORATION, All rights reserved
IXTH130N20T
Fig. 7. Input Admittance
Fig. 8. Transconductance
160
140
120
100
80
180
160
140
120
100
80
T = - 40ºC
J
25ºC
T = 150ºC
J
25ºC
- 40ºC
150ºC
60
60
40
40
20
20
0
0
3.4
3.8
4.2
4.6
5
5.4
5.8
6.2
6.6
1.3
40
0
20
40
60
80
100
120
140
160
180
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
300
250
200
150
100
50
V
= 100V
DS
I
I
= 25A
D
G
= 10mA
T = 150ºC
J
T
J
= 25ºC
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
15
30
45
60
75
90
105 120 135 150
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
10,000
1,000
100
1.00
0.10
0.01
0.00
f = 1 MHz
C
iss
C
C
oss
rss
0
5
10
15
20
25
30
35
0.00001
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH130N20T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
20
19
18
17
16
15
14
13
12
11
10
20
19
18
17
16
15
14
13
12
11
10
R
= 2
Ω
G
V
V
= 15V
GS
DS
T = 25ºC
J
= 100V
R
V
V
= 2
Ω
G
= 15V
GS
DS
= 100V
I
= 130A
D
I
= 65A
D
T = 125ºC
J
25
35
45
55
65
75
85
95
105 115 125
30
40
50
60
70
80
90
100 110 120 130
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
45
30
29
28
27
26
25
24
23
25
80
75
70
65
60
55
50
24
23
22
21
20
19
18
17
16
15
14
13
t r
td(on)
t f
R
td(off)
- - - -
= 2 , V = 15V
- - - -
TJ = 125ºC, V = 15V
40
35
30
25
20
15
10
Ω
GS
G
GS
V
= 100V
V
= 100V
DS
DS
I
= 130A
D
I
= 130A, 65A
D
I
= 65A
D
I
= 130A
D
2
3
4
5
6
7
8
9
10
25 35 45 55 65 75 85 95 105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
28
26
24
22
20
18
16
14
12
90
85
80
75
70
65
60
55
50
90
200
180
160
140
120
100
80
t f
R
td(off)
- - - -
VGS = 15V
tf
td(off)
- - - -
80
70
60
50
40
30
20
10
= 2
,
T = 125ºC, VGS = 15V
J
Ω
G
VDS = 100V
VDS = 100V
T = 25ºC
J
I
= 65A, 130A
D
TJ = 125ºC
60
T = 25ºC
J
40
30
40
50
60
70
80
90 100 110 120 130
2
3
4
5
6
7
8
9
10
ID - Amperes
RG - Ohms
© 2007 IXYS CORPORATION, All rights reserved
IXYS REF: T_130N20T(8W) 06-07-07
相关型号：
IXTH140P10T
Power Field-Effect Transistor, 140A I(D), 100V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
IXYS
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