IXTH13N80 [IXYS]
MegaMOSFET; MegaMOSFET
| 型号： | IXTH13N80 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | MegaMOSFET |
| 文件： | 总4页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDSS
ID25
RDS(on)
MegaMOSTMFET
IXTH / IXTM 11N80 800 V 11 A 0.95 Ω
IXTH / IXTM 13N80 800 V 13 A 0.80 Ω
N-Channel Enhancement Mode
TO-247 AD (IXTH)
Maximum Ratings
Symbol
TestConditions
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
D (TAB)
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
IDM
TC = 25°C
11N80
13N80
11
13
44
52
A
A
A
A
TO-204 AA (IXTM)
TC = 25°C, pulse width limited by TJM 11N80
13N80
PD
TC = 25°C
300
W
TJ
-55 ... +150
150
°C
°C
°C
G
TJM
Tstg
G = Gate,
S = Source,
D = Drain,
TAB = Drain
-55 ... +150
Md
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Weight
Features
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
●
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
●
●
●
●
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
●
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
●
VDSS
VGS = 0 V, ID = 3 mA
800
2
V
V
●
●
VGS(th)
VDS = VGS, ID = 250 µA
4.5
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
Advantages
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
250 µA
1
mA
●
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs,
11N80
13N80
0.95
0.80
Ω
Ω
●
●
915380F (5/96)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSCorporation
IXYSSemiconductor
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
IXTH 11N80 IXTH 13N80
IXTM 11N80 IXTM 13N80
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-247 AD (IXTH) Outline
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
8
14
S
1
2
3
Ciss
Coss
Crss
4500
310
65
pF
pF
pF
td(on)
tr
td(off)
tf
20
33
50
50
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
Terminals: 1 - Gate
2 - Drain
Tab - Drain
RG = 2 Ω, (External)
63 100
32 50
3 - Source
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Qg(on)
Qgs
145 170
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
30
55
45
80
Qgd
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCK
0.42 K/W
K/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
0.25
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
Symbol
IS
TestConditions
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
VGS = 0 V
11N80
13N80
11
13
A
A
ISM
Repetitive;
pulse width limited by TJM 13N80
11N80
44
52
A
A
TO-204AA (IXTM) Outline
VSD
IF = IS, VGS = 0 V,
1.5
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
800
ns
Pins
1 - Gate
2 - Source
Case - Drain
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
6.4
11.4
3.42
1.09
.250 .450
.135
.038 .043
b
.97
D
22.22
.875
e
e1
10.67 11.17
.420 .440
.205 .225
5.21
5.71
L
7.93
3.84
p1 3.84
.312
p
4.19
4.19
.151 .165
.151 .165
q
30.15 BSC
1.187 BSC
R
R1
13.33
4.77
.525
.188
s
16.64 17.14
.655 .675
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXTH11N80
IXTM11N80
IXTH13N80
IXTM13N80
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
18
16
14
12
10
8
18
16
14
12
10
8
TJ = 25°C
VDS = 10V
6
6
4
4
2
2
0
0
0
2
4
6
8
10
12
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
TJ = 25°C
VGS = 10V
0
2
4
6
8
10 12 14 16 18 20 22 24 26
ID - Amperes
-50 -25
0
25 50
75 100 125 150
TJ - Degrees C
Fig. 5 Drain Current vs.
Case Temperature
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
18
16
14
12
10
8
VGS(th)
6
4
2
0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50
75 100 125 150
TJ - Degrees C
TC - Degrees C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSCorporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYSSemiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
IXTH11N80
IXTM11N80
IXTH13N80
IXTM13N80
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
10
8
10µs
Limited by RDS(on)
VDS = 400V
ID = 13A
100µs
1ms
IG = 10mA
10
1
6
4
10ms
100ms
2
0
0.1
0
25
50
75
100
125
150
1
10
100
1000
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
4500
4000
3500
3000
2500
2000
1500
1000
500
18
16
14
12
10
8
Ciss
f = 1 MHz
V
DS = 25V
6
TJ = 125°C
TJ = 25°C
4
Coss
Crss
2
0
0
0
5
10
15
20
25
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VCE - Volts
VSD - Volts
Fig.11 Transient Thermal Impedance
1
0.1
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
0.01
0.001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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