IXTH130N15T [LITTELFUSE]
Power Field-Effect Transistor,;![IXTH130N15T](http://pdffile.icpdf.com/pdf2/p00292/img/icpdf/IXTH130N15T_1772860_icpdf.jpg)
型号: | IXTH130N15T |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, 局域网 开关 脉冲 晶体管 |
文件: | 总6页 (文件大小:189K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Technical Information
TrenchHVTM
Power MOSFET
IXTH130N15T
IXTQ130N15T
VDSS = 150
ID25 = 130
RDS(on) ≤ 12 mΩ
V
A
N-ChannelEnhancementMode
AvalancheRated
TO-247 (IXTH)
Symbol
TestConditions
Maximum Ratings
G
(TAB)
D
S
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
150
150
V
V
VGSM
Transient
± 30
V
TO-3P(IXTQ)
ID25
ILRMS
IDM
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
130
75
330
A
A
A
IAR
EAS
TC = 25°C
TC = 25°C
5
1.2
A
J
G
D
S
(TAB)
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS
TJ ≤ 175°C, RG = 2.5 Ω
3
V/ns
G = Gate
S = Source
D = Drain
TAB = Drain
TC = 25°C
750
W
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
TL
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
°C
°C
Features
z Unclamped Inductive Switching (UIS)
rated
Md
Mounting torque
1.13 / 10 Nm/lb.in.
z Low package inductance
- easy to drive and to protect
z 175 °C Operating Temperature
Weight
TO-3P
TO-247
5.5
6
g
g
Advantages
z
Easy to mount
Space savings
High power density
z
z
Symbol
TestConditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 1 mA
VGS = ± 20 V, VDS = 0 V
150
V
V
2.5
4.5
± 200
nA
IDSS
VDS = VDSS
VGS = 0 V
5
250
μA
μA
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Notes 1, 2
10
12 mΩ
DS99796 (02/07)
© 2007 IXYS CORPORATION, All rights reserved
IXTH130N15T
IXTQ130N15T
Symbol
TestConditions
Characteristic Values
TO-247AD Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 60 A, Note 1
60
100
S
Ciss
Coss
Crss
9800
1450
320
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
1
2
3
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 2.5 Ω (External)
23
16
57
27
ns
ns
ns
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Qg(on)
Qgs
113
32
nC
nC
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qgd
31
RthJC
RthCS
0.20 °C/W
°C/W
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
0.25
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Source-DrainDiode
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Symbol
TestConditions
Characteristic Values
.780 .800
.177
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
130
330
1.2
ÆP 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
IS
VGS = 0 V
A
A
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
ISM
VSD
trr
Pulse width limited by TJM
IF = 50 A, VGS = 0 V, Note 1
V
TO-3P (IXTQ) Outline
IF = 50 A, -di/dt = 100 A/μs
100
ns
VR = 25 V, VGS = 0 V
Notes: 1. Pulse test, t ≤ 300 ms, duty cycle, d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered
byoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478B2 7,071,537
7,005,734B2 7,157,338B2
7,063,975B2
IXTH130N15T
IXTQ130N15T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
130
120
110
100
90
300
250
200
150
100
50
V
GS
= 10V
9V
V
= 10V
GS
9V
8V
8V
7V
7V
6V
80
70
60
50
40
30
6V
5V
20
10
5V
0
0
0
2
4
6
8
10
12
14
16
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 65A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
130
120
110
100
90
V
= 10V
GS
V
= 10V
GS
9V
8V
7V
6V
I
= 130A
D
80
70
I
= 65A
D
60
50
40
30
5V
20
10
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 65A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
4.5
4
90
80
70
60
50
40
30
20
10
0
V
= 10V
15V
GS
T = 175ºC
J
External Lead Current Limit
- - - -
3.5
3
2.5
2
1.5
1
T = 25ºC
J
0.5
-50
-25
0
25
50
75
100
125
150
175
0
50
100
150
200
250
300
ID - Amperes
TC - Degrees Centigrade
© 2007 IXYS CORPORATION, All rights reserved
IXTH130N15T
IXTQ130N15T
Fig. 8. Transconductance
Fig. 7. Input Admittance
180
160
140
120
100
80
160
140
120
100
80
T
J
= - 40ºC
25ºC
150ºC
T
J
= 150ºC
60
25ºC
- 40ºC
60
40
40
20
20
0
0
0
20
40
60
80
100 120 140 160 180 200
3.5
4
4.5
5
5.5
6
6.5
7
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
300
250
200
150
100
50
10
9
8
7
6
5
4
3
2
1
0
V
= 75V
DS
I
I
= 25A
D
G
= 10mA
T
J
= 150ºC
T
J
= 25ºC
0
0
20
40
60
80
100
120
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1,000
100
1.00
0.10
0.01
C
iss
C
C
oss
rss
f = 1 MHz
0
5
10
15
20
25
30
35
40
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH130N15T
IXTQ130N15T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
17
16
15
14
13
12
11
18
17
16
15
14
13
12
11
R
V
V
= 2.5
Ω
G
T = 25ºC
J
= 15V
= 75V
GS
DS
R
V
V
= 2.5
Ω
G
65A < I < 130A
D
= 15V
= 75V
GS
DS
T = 125ºC
J
60
70
80
90
100
110
120
130
25
35
45
55
65
75
85
95
105 115 125
ID - Amperes
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
30
80
75
70
65
60
55
50
45
40
25
29
28
27
26
25
24
23
22
t f
R
td(off)
- - - -
t r
td(on)
- - - -
28
26
24
22
20
18
16
14
= 2.5 , V = 15V
23
21
19
17
15
13
11
Ω
G
GS
TJ = 125ºC, V = 15V
GS
V
= 75V
DS
V
= 75V
DS
I
= 65A
D
I
= 65A
D
I
= 130A
D
I
= 130A
D
25
35
45
55
65
75
85
95 105 115 125
2
3
4
5
6
7
8
9
10
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
60
55
50
45
40
35
30
25
20
15
10
220
200
180
160
140
120
100
80
28
26
24
22
20
18
16
14
68
64
60
56
52
48
44
40
t f
td(off)
- - - -
TJ = 125ºC
T = 125ºC, VGS = 15V
J
VDS = 75V
T = 25ºC
J
I
= 65A, 130A
D
t f
R
td(off)
- - - -
T = 25ºC
J
= 2.5 , VGS = 15V
Ω
G
VDS = 75V
60
TJ = 125ºC
110
40
20
2
3
4
5
6
7
8
9
10
60
70
80
90
100
120
130
RG - Ohms
ID - Amperes
IXYS REF: T_130N15T (7W) 01-31-07.xls
© 2007 IXYS CORPORATION, All rights reserved
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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IXYS
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