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IXTH130N10T [IXYS]

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated; TrenchMVTM功率MOSFET N沟道增强型额定雪崩
IXTH130N10T
型号： IXTH130N10T
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
TrenchMVTM功率MOSFET N沟道增强型额定雪崩

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
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TrenchMVTM  
Power MOSFET  
VDSS = 100V  
ID25 = 130A  
RDS(on) ≤ 9.1mΩ  
IXTH130N10T  
IXTQ130N10T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
D
(TAB)  
S
VDGR  
VGSM  
Transient  
± 20  
V
TO-3P (IXTQ)  
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
130  
75  
A
A
A
300  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
65  
500  
360  
A
mJ  
W
G
D
EAS  
PD  
S
(TAB)  
G = Gate  
D
TAB  
=
=
Drain  
Drain  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
S = Source  
TJM  
Tstg  
-55 ... +175  
Features  
TL  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z Ultra-low On Resistance  
z UnclampedInductiveSwitching(UIS)  
rated  
z Lowpackageinductance  
- easy to drive and to protect  
z 175°COperatingTemperature  
Md  
Mountingtorque(TO-247)(TO-3P)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-247  
TO-3P  
6.0  
5.5  
g
g
Advantages  
z
Easy to mount  
Space savings  
Highpowerdensity  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
100  
2.5  
V
V
Applications  
4.5  
z
Automotive  
±200 nA  
μA  
- MotorDrives  
- High Side Switch  
- 12VBattery  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 150°C  
250 μA  
9.1 mΩ  
- ABS Systems  
RDS(on)  
VGS = 10V, ID = 25A, Notes 1, 2  
z
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
HighCurrentSwitching  
z
z
Applications  
DS99708A(07/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH130N10T  
IXTQ130N10T  
Symbol  
TestConditions  
Characteristic Values  
TO-247 (IXTH) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10V, ID = 60A, Note 1  
55  
93  
S
Ciss  
Coss  
Crss  
5080  
635  
95  
pF  
pF  
pF  
∅P  
1
2
3
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
30  
47  
44  
28  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A  
e
RG = 5Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
Qg(on)  
Qgs  
104  
30  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS= 10V, VDS = 0.5 • VDSS, ID = 25A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
29  
RthJC  
RthCH  
0.42 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-DrainDiode  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Symbol  
TestConditions  
CharacteristicValues  
.780 .800  
.177  
TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
∅P 3.55  
Q
3.65  
.140 .144  
IS  
VGS = 0V  
130  
A
A
5.89  
6.40 0.232 0.252  
R
4.32  
5.49 .170 .216  
ISM  
Repetitive, pulse width limited by TJM  
350  
VSD  
trr  
IF = 25A, VGS = 0V, Note 1  
1.0  
V
ns  
A
TO-3P (IXTQ) Outline  
67  
4.7  
IF = 25A, VGS = 0V  
IRM  
Qrr  
-di/dt = 100A/μs  
VR = 50V  
160  
nC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXTH130N10T  
IXTQ130N10T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
280  
240  
200  
160  
120  
80  
130  
120  
110  
100  
90  
VGS = 10V  
9V  
VGS = 10V  
8V  
8V  
7V  
80  
7V  
6V  
70  
60  
50  
40  
30  
20  
40  
6V  
3
10  
0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
VDS - Volts  
0
1
2
4
5
6
7
8
9
10  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 65A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
130  
120  
110  
100  
90  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
VGS = 10V  
9V  
8V  
I D = 130A  
80  
7V  
6V  
5V  
I D = 65A  
70  
60  
50  
40  
30  
20  
10  
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 65A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
15V  
TJ = 175ºC  
- - - -  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
40  
80  
120  
160  
200  
240  
280  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTH130N10T  
IXTQ130N10T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
270  
240  
210  
180  
150  
120  
90  
130  
120  
110  
100  
90  
TJ = - 40ºC  
TJ = - 40ºC  
25ºC  
150ºC  
25ºC  
80  
70  
60  
150ºC  
50  
40  
30  
60  
20  
30  
10  
0
0
0
20  
40  
60  
80 100 120 140 160 180 200 220  
ID - Amperes  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
270  
240  
210  
180  
150  
120  
90  
VDS = 50V  
I D = 25A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
60  
30  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100 110  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
iss  
C
oss  
C
rss  
f = 1 MHz  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH130N10T  
IXTQ130N10T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
65  
60  
55  
50  
45  
40  
35  
30  
25  
62  
58  
54  
50  
46  
42  
38  
34  
30  
26  
22  
RG = 5  
Ω
RG = 5  
Ω
VGS = 10V  
VGS = 10V  
VDS = 50V  
VDS = 50V  
TJ = 25ºC  
I D = 50A  
TJ = 125ºC  
I D = 25A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
25  
30  
35  
40  
45  
50  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
130  
120  
110  
100  
90  
53  
50  
47  
44  
41  
38  
35  
32  
29  
26  
23  
20  
40  
68  
64  
60  
56  
52  
48  
44  
40  
t f  
RG = 5 , VGS = 10V  
t
d(off) - - - -  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
38  
36  
34  
32  
30  
28  
26  
Ω
VDS = 50V  
VDS = 50V  
I D = 25A  
I D = 50A  
80  
I D = 25A  
70  
60  
I D = 50A  
50  
40  
30  
20  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
100  
90  
80  
70  
60  
50  
40  
30  
170  
150  
130  
110  
90  
40  
38  
36  
34  
32  
30  
28  
26  
24  
70  
66  
62  
58  
54  
50  
46  
42  
38  
25A < I D < 50A  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
VDS = 50V  
TJ = 125ºC  
t f  
RG = 5 , VGS = 10V  
t
d(off) - - - -  
Ω
VDS = 50V  
I D = 25A  
I D = 50A  
70  
TJ = 25ºC  
50  
30  
4
6
8
10  
12  
14  
16  
18  
20  
25  
30  
35  
40  
45  
50  
RG - Ohms  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_130N10T(V3)07-29-08-A  

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