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IXTH130N15T [IXYS]

Power Field-Effect Transistor, 130A I(D), 150V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN;
IXTH130N15T
型号： IXTH130N15T
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Power Field-Effect Transistor, 130A I(D), 150V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

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Preliminary Technical Information  
TrenchHVTM  
Power MOSFET  
IXTH130N15T  
IXTQ130N15T  
VDSS = 150  
ID25 = 130  
RDS(on) ≤ 12 mΩ  
V
A
N-ChannelEnhancementMode  
AvalancheRated  
TO-247 (IXTH)  
Symbol  
TestConditions  
Maximum Ratings  
G
(TAB)  
D
S
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
150  
150  
V
V
VGSM  
Transient  
± 30  
V
TO-3P(IXTQ)  
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
130  
75  
330  
A
A
A
IAR  
EAS  
TC = 25°C  
TC = 25°C  
5
1.2  
A
J
G
D
S
(TAB)  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 2.5 Ω  
3
V/ns  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TC = 25°C  
750  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
z Unclamped Inductive Switching (UIS)  
rated  
Md  
Mounting torque  
1.13 / 10 Nm/lb.in.  
z Low package inductance  
- easy to drive and to protect  
z 175 °C Operating Temperature  
Weight  
TO-3P  
TO-247  
5.5  
6
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 1 mA  
VGS = ± 20 V, VDS = 0 V  
150  
V
V
2.5  
4.5  
± 200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
250  
μA  
μA  
TJ = 150°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25, Notes 1, 2  
10  
12 mΩ  
DS99796 (02/07)  
© 2007 IXYS CORPORATION, All rights reserved  
IXTH130N15T  
IXTQ130N15T  
Symbol  
TestConditions  
Characteristic Values  
TO-247AD Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10 V; ID = 60 A, Note 1  
60  
100  
S
Ciss  
Coss  
Crss  
9800  
1450  
320  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
1
2
3
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
RG = 2.5 Ω (External)  
23  
16  
57  
27  
ns  
ns  
ns  
ns  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Qg(on)  
Qgs  
113  
32  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
31  
RthJC  
RthCS  
0.20 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-DrainDiode  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Symbol  
TestConditions  
Characteristic Values  
.780 .800  
.177  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
130  
330  
1.2  
ÆP 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
IS  
VGS = 0 V  
A
A
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 50 A, VGS = 0 V, Note 1  
V
TO-3P (IXTQ) Outline  
IF = 50 A, -di/dt = 100 A/μs  
100  
ns  
VR = 25 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤ 300 ms, duty cycle, d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5 mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered  
byoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6,771,478B2 7,071,537  
7,005,734B2 7,157,338B2  
7,063,975B2  
IXTH130N15T  
IXTQ130N15T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
130  
120  
110  
100  
90  
300  
250  
200  
150  
100  
50  
V
GS  
= 10V  
9V  
V
= 10V  
GS  
9V  
8V  
8V  
7V  
7V  
6V  
80  
70  
60  
50  
40  
30  
6V  
5V  
20  
10  
5V  
0
0
0
2
4
6
8
10  
12  
14  
16  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 65A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
130  
120  
110  
100  
90  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
6V  
I
= 130A  
D
80  
70  
I
= 65A  
D
60  
50  
40  
30  
5V  
20  
10  
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.2  
3.6  
4
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 65A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
4.5  
4
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
15V  
GS  
T = 175ºC  
J
External Lead Current Limit  
- - - -  
3.5  
3
2.5  
2
1.5  
1
T = 25ºC  
J
0.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
50  
100  
150  
200  
250  
300  
ID - Amperes  
TC - Degrees Centigrade  
© 2007 IXYS CORPORATION, All rights reserved  
IXTH130N15T  
IXTQ130N15T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
180  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
150ºC  
T
J
= 150ºC  
60  
25ºC  
- 40ºC  
60  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
3.5  
4
4.5  
5
5.5  
6
6.5  
7
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 75V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150ºC  
T
J
= 25ºC  
0
0
20  
40  
60  
80  
100  
120  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
iss  
C
C
oss  
rss  
f = 1 MHz  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH130N15T  
IXTQ130N15T  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
17  
16  
15  
14  
13  
12  
11  
18  
17  
16  
15  
14  
13  
12  
11  
R
V
V
= 2.5  
Ω
G
T = 25ºC  
J
= 15V  
= 75V  
GS  
DS  
R
V
V
= 2.5  
Ω
G
65A < I < 130A  
D
= 15V  
= 75V  
GS  
DS  
T = 125ºC  
J
60  
70  
80  
90  
100  
110  
120  
130  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
30  
80  
75  
70  
65  
60  
55  
50  
45  
40  
25  
29  
28  
27  
26  
25  
24  
23  
22  
t f  
R
td(off)  
- - - -  
t r  
td(on)  
- - - -  
28  
26  
24  
22  
20  
18  
16  
14  
= 2.5 , V = 15V  
23  
21  
19  
17  
15  
13  
11  
Ω
G
GS  
TJ = 125ºC, V = 15V  
GS  
V
= 75V  
DS  
V
= 75V  
DS  
I
= 65A  
D
I
= 65A  
D
I
= 130A  
D
I
= 130A  
D
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
220  
200  
180  
160  
140  
120  
100  
80  
28  
26  
24  
22  
20  
18  
16  
14  
68  
64  
60  
56  
52  
48  
44  
40  
t f  
td(off)  
- - - -  
TJ = 125ºC  
T = 125ºC, VGS = 15V  
J
VDS = 75V  
T = 25ºC  
J
I
= 65A, 130A  
D
t f  
R
td(off)  
- - - -  
T = 25ºC  
J
= 2.5 , VGS = 15V  
Ω
G
VDS = 75V  
60  
TJ = 125ºC  
110  
40  
20  
2
3
4
5
6
7
8
9
10  
60  
70  
80  
90  
100  
120  
130  
RG - Ohms  
ID - Amperes  
IXYS REF: T_130N15T (7W) 01-31-07.xls  
© 2007 IXYS CORPORATION, All rights reserved  

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