IXTA1N120P-TRL [LITTELFUSE]
Power Field-Effect Transistor,;型号: | IXTA1N120P-TRL |
厂家: | LITTELFUSE |
描述: | Power Field-Effect Transistor, |
文件: | 总6页 (文件大小:309K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PolarTM
Power MOSFET
IXTY1N120P
IXTA1N120P
IXTP1N120P
VDSS = 1200V
ID25 = 1A
RDS(on) 20
N-Channel Enhancement Mode
Avalanche Rated
TO-252 (IXTY)
G
S
D (Tab)
TO-263 (IXTA)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
1200
1200
V
V
G
S
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
30
40
V
V
D (Tab)
TO-220 (IXTP)
ID25
IDM
TC = 25C
1.0
1.8
A
A
TC = 25C, Pulse Width Limited by TJM
IA
TC = 25C
TC = 25C
1.0
A
G
EAS
100
mJ
D
S
D (Tab)
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
10
63
V/ns
W
G = Gate
S = Source
D
= Drain
Tab = Drain
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
-55 ... +150
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
Weight
TO-252
TO-263
TO-220
0.35
2.50
3.00
g
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 50μA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
1200
V
V
2.5
4.5
DC-DC Converters
Switch-Mode and Resonant-Mode
50 nA
A
Power Supplies
AC and DC Motor Drives
IDSS
5
Discharge Circiuts in Lasers, Spark
Igniters, RF Generators
TJ = 125C
200 A
High Voltage Pulse Power
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1& 2
15.5
20.0
Applications
DS99870D(6/18)
© 2018 IXYS CORPORATION, All Rights Reserved
IXTY1N120P IXTA1N120P
IXTP1N120P
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 30V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
0.55
0.90
S
Ciss
Coss
Crss
445
25
pF
pF
pF
5.4
Qg(on)
Qgs
17.6
3.5
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
10.6
td(on)
tr
td(off)
tf
20
28
54
27
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 30 (External)
RthJC
RthCS
2.0 C/W
C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
1
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
3
1.5
V
IF = 1A, -di/dt = 100A/μs, VR = 100V
900
ns
Notes: 1. Pulse test, t 300s, duty cycle, d 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXTY1N120P IXTA1N120P
IXTP1N120P
Fig. 2. Output Characteristics @ TJ = 125oC
Fig. 1. Output Characteristics @ TJ = 25oC
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
= 10V
7V
V
= 10V
6V
GS
GS
6V
5V
5V
0
5
10
15
20
25
30
35
40
1.4
6.0
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs.
Junction Temperature
Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs.
Drain Current
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
2.8
2.4
2.0
1.6
1.2
0.8
0.4
V
= 10V
V
= 10V
GS
GS
T = 125oC
J
I
= 1.0A
D
I
= 0.5A
D
T
= 25oC
J
-50
-25
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1
1.2
ID - Amperes
TJ - Degrees Centigrade
Fig. 5. Maximum Drain Current vs. Case Temperature
Fig. 6. Input Admittance
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.0
0.8
0.6
0.4
0.2
0.0
V
= 30V
DS
T
J
= 125oC
25oC
- 40oC
3.0
3.5
4.0
4.5
5.0
5.5
-50
-25
0
25
50
75
100
125
150
VGS - Volts
TC - Degrees Centigrade
© 2018 IXYS CORPORATION, All Rights Reserved
IXTY1N120P IXTA1N120P
IXTP1N120P
Fig. 7. Transconductance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
J
= - 40oC
V
= 30V
DS
25oC
125oC
TJ = 125oC
T
J
= 25oC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
ID - Amperes
VSD - Volts
Fig. 9. Gate Charge
Fig. 10. Capacitance
1,000
100
10
10
9
8
7
6
5
4
3
2
1
0
V
I
= 600V
DS
C
= 0.5A
iss
D
I
= 10mA
G
C
oss
C
rss
f
= 1 MHz
5
1
0
2
4
6
8
10
12
14
16
18
0
10
15
20
25
30
35
40
VDS - Volts
QG - NanoCoulombs
Fig. 11. Maximum Transient Thermal Impedance
10
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY1N120P IXTA1N120P
IXTP1N120P
TO-252 AA Outline
TO-263 Outline
TO-220 Outline
A
A
E
b3
A
C2
E
E1
4
c2
L3
E
oP
A1
4
L1
D1
D
H1
A1
A2
Q
L2
H
H
A1
L4
1
3
2
1
2
3
D2
E1
D
L1
b2
L
c
b2
b
L3
c
D1
1 - Gate
2,4 - Drain
3 - Source
e
e
e
e1
0.43 [11.0]
L2
e1
0
0
A2
5.55MIN
OPTIONAL
EJECTOR
PIN
0.34 [8.7]
L1
0.66 [16.6]
A2
L
6.50MIN
4
1 - Gate
2,4 - Drain
3 - Source
0.20 [5.0]
0.10 [2.5]
0.12 [3.0]
0.06 [1.6]
6.40
2.28
3X b
3X b2
e
c
2.85MIN
1.25MIN
e1
BOTTOM
VIEW
1 - Gate
2,4 - Drain
3 - Source
LAND PATTERN RECOMMENDATION
© 2018 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_1N120P(2A-245) 4-01-08
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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