IXTA1R6N100D2HV [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXTA1R6N100D2HV |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage
Depletion Mode
MOSFET
VDSX = 1000V
ID(on) > 1.6A
IXTA1R6N100D2HV
RDS(on) 10
D
N-Channel
G
TO-263HV
S
G
S
Symbol
VDSX
Test Conditions
Maximum Ratings
D (Tab)
TJ = 25C to 150C
1000
V
VGSX
VGSM
Continuous
Transient
20
30
V
V
G = Gate
S = Source
D
= Drain
Tab = Drain
PD
TC = 25C
100
W
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
C
C
C
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Features
• High Voltage package
• High Blocking Voltage
• Normally ON Mode
Md
Mounting Force
10..65 / 2.2..14.6
2.5
N/lb
g
Weight
• International Standard Package
• Molding Epoxies Meet UL94V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
1000
- 2.5
Typ.
Max.
Applications
BVDSX
VGS(off)
IGSX
VGS = - 5V, ID = 250A
VDS = 25V, ID = 100A
VGS = 20V, VDS = 0V
VDS = VDSX, VGS = - 5V
V
V
- 4.5
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
100 nA
A
IDSX(off)
2
TJ = 125C
25 A
RDS(on)
ID(on)
VGS = 0V, ID = 0.8A, Note 1
VGS = 0V, VDS = 50V, Note 1
10
1.6
A
DS100778A(4/17)
© 2017 IXYS CORPORATION, All Rights Reserved
IXTA1R6N100D2HV
Symbol
Test Conditions
Characteristic Values
TO-263 HV Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 30V, ID = 0.8A, Note 1
0.65
1.10
S
Ciss
Coss
Crss
645
43
pF
pF
pF
VGS = -10V, VDS = 25V, f = 1MHz
11
td(on)
tr
td(off)
tf
27
65
34
41
ns
ns
ns
ns
Resistive Switching Times
V
GS = 5V, VDS = 500V, ID = 0.8A
PIN: 1 - Gate
2 - Source
3 - Drain
RG = 5 (External)
Qg(on)
Qgs
27.0
1.6
nC
nC
nC
VGS = 5V, VDS = 500V, ID = 0.8A
Qgd
13.5
RthJC
1.25C/W
Safe-Operating-Area Specification
Characteristic Values
Symbol
SOA
Test Conditions
Min.
Typ.
Max.
VDS = 800V, ID = 75mA, TC = 75C, Tp = 5s
60
W
V
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
Min.
(TJ = 25C, Unless Otherwise Specified)
Typ.
Max.
VSD
IF = 1.6A, VGS = -10V, Note 1
0.8
1.3
trr
IRM
QRM
970
9.96
4.80
ns
A
μC
IF = 1.6A, -di/dt = 100A/s
VR = 100V, VGS = -10V
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTA1R6N100D2HV
Fig. 1. Output Characteristics @ TJ = 25oC
Fig. 2. Extended Output Characteristics @ TJ = 25oC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 5V
V
= 5V
GS
GS
1V
0V
2V
1V
0V
-1V
-1V
- 2V
- 3V
- 2V
- 3V
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
70
80
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125oC
Fig. 4. Drain Current @ TJ = 25oC
1.6
1.4
1.2
1
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1E-07
1E-08
1E-09
V
= 5V
GS
V
= - 3.25V
- 3.50V
GS
1V
0V
- 3.75V
- 4.00V
-1V
0.8
0.6
0.4
0.2
0
- 4.25V
- 2V
- 3V
- 4.50V
- 4.75V
0
4
8
12
16
20
24
28
32
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
VDS - Volts
Fig. 5. Drain Current @ TJ = 100oC
Fig. 6. Dynamic Resistance vs. Gate Voltage
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
V
= 700V - 100V
∆
DS
VGS = - 3.50V
- 3.75V
- 4.00V
- 4.25V
T = 25oC
J
- 4.50V
- 4.75V
T = 100oC
J
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
-4.8
-4.6
-4.4
-4.2
-4.0
-3.8
-3.6
-3.4
-3.2
VGS - Volts
© 2017 IXYS CORPORATION, All Rights Reserved
IXTA1R6N100D2HV
Fig. 8. RDS(on) Normalized to ID = 0.8A Value
vs. Drain Current
Fig. 7. Normalized RDS(on) vs. Junction Temperature
2.6
2.2
1.8
1.4
1.0
0.6
0.2
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 0V
5V
V
= 0V
GS
GS
I
= 0.8A
D
T = 125oC
J
T = 25oC
J
-50
-25
0
25
50
75
100
125
150
0
0.5
1
1.5
2
2.5
3
ID - Amperes
TJ - Degrees Centigrade
Fig. 10. Transconductance
Fig. 9. Input Admittance
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 30V
DS
V
= 30V
DS
T
J
= - 40oC
25oC
125oC
T
J
= 125oC
25oC
- 40oC
0
0.5
1
1.5
2
2.5
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
ID - Amperes
VGS - Volts
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
Fig. 12. Forward Voltage Drop of Intrinsic Diode
5
4
3
2
1
0
1.3
1.2
1.1
1.0
0.9
0.8
V
= -10V
GS
VGS(off) @ V = 25V
DS
BVDSX @ V = - 5V
GS
T
J
= 125oC
T
J
= 25oC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VSD - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA1R6N100D2HV
Fig. 13. Capacitance
Fig. 14. Gate Charge
5
4
10,000
1,000
100
10
= 1 MHz
f
V
= 500V
DS
I
I
= 0.8A
D
G
3
C
= 1mA
iss
2
1
0
C
C
oss
-1
-2
-3
-4
-5
rss
1
0
5
10
15
20
25
0
5
10
15
20
25
30
35
40
VDS - Volts
QG - NanoCoulombs
Fig. 16. Forward-Bias Safe Operating Area
@ TC = 75oC
Fig. 15. Forward-Bias Safe Operating Area
@ TC = 25oC
10
10
R
DS(on)
Limit
R
DS(on)
Limit
25μs
100μs
1
1
100μs
1ms
1ms
10ms
10ms
100ms
0.1
0.1
DC
100ms
T
= 150oC
= 75oC
DC
T
= 150oC
= 25oC
J
J
T
C
T
C
Single Pulse
Single Pulse
0.01
0.01
10
100
1,000
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 17. Maximum Transient Thermal Impedance
hvjv
2.00
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_1R6N100D2(2C)8-24-09
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
相关型号：
IXTA200N075T
Power Field-Effect Transistor, 200A I(D), 75V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
IXYS
IXTA200N075T7
Power Field-Effect Transistor, 200A I(D), 75V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 6 PIN
IXYS
IXTA200N085T7
Power Field-Effect Transistor, 200A I(D), 85V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 7 PIN
IXYS
IXTA220N04T2-7
Power Field-Effect Transistor, 220A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, PLASTIC PACKAGE-7
IXYS
©2020 ICPDF网 联系我们和版权申明