IXTA200N055T2-TRL [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXTA200N055T2-TRL |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TrenchT2TM
Power MOSFET
VDSS = 55V
ID25 = 200A
RDS(on) 4.2m
IXTA200N055T2
IXTP200N055T2
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
G
S
D (Tab)
TO-220 (IXTP)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 175C
55
55
V
V
VDGR
TJ = 25C to 175C, RGS = 1M
VGSM
Transient
20
V
G
D
S
ID25
IL(RMS)
IDM
TC = 25C
External Lead Current Limit
TC = 25C, Pulse Width Limited by TJM
200
120
500
A
A
A
D (Tab)
G = Gate
D
= Drain
S = Source Tab = Drain
IA
TC = 25C
TC = 25C
100
600
A
EAS
mJ
PD
TC = 25C
360
W
Features
TJ
-55 ... +175
175
C
C
C
International Standard Packages
Avalanche Rated
TJM
Tstg
-55 ... +175
Low Package Inductance
Fast Intrinsic Rectifier
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
175°C Operating Temperature
High Current Handling Capability
ROHS Compliant
High Performance Trench
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
Weight
TO-263
TO-220
2.5
3.0
g
g
Technology for extremely low RDS(on)
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
55
V
V
Applications
2.0
4.0
Automotive Engine Control
Synchronous Buck Converter
200 nA
A
(for Notebook SystemPower &
IDSS
5
General Purpose Point & Load)
DC/DC Converters
High Current Switching Applications
TJ = 150C
VGS = 10V, ID = 50A, Notes 1 & 2
50 A
4.2 m
RDS(on)
3.3
Power Train Management
Distributed Power Architecture
DS99919D(7/18)
© 2018 IXYS CORPORATION, All Rights Reserved
IXTA200N055T2
IXTP200N055T2
Symbol
Test Conditions
Characteristic Values
TO-263 Outline
A
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
E
E1
C2
L1
L2
gfs
VDS = 10V, ID = 60A, Note 1
50
80
S
D1
D
4
H
A1
Ciss
Coss
Crss
6970
1026
228
pF
pF
pF
1
3
2
VGS = 0V, VDS = 25V, f = 1MHz
b
b2
L3
c
e
e
0.43 [11.0]
0
0.34 [8.7]
td(on)
tr
td(off)
tf
26
22
49
27
ns
ns
ns
ns
Resistive Switching Times
0.66 [16.6]
A2
V
GS = 10V, VDS = 30V, ID = 50A
1 - Gate
2,4 - Drain
3 - Source
0.20 [5.0]
0.10 [2.5]
60.12 [3.0]
0.06 [1.6]
RG = 3.3 (External)
Qg(on)
Qgs
109
35
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, 0.5 • IDSS
Qgd
24
RthJC
RthCS
0.42 C/W
C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
200
600
1.1
IS
VGS = 0V
A
A
V
TO-220 Outline
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 50A, VGS = 0V, Note 1
A
E
oP
A1
H1
Q
trr
49
2.6
64
ns
A
D2
E1
D
IF = 100A, VGS = 0V,
IRM
QRM
D1
-di/dt = 100A/s, VR = 27V
nC
A2
EJECTOR
PIN
L1
L
3X b
3X b2
ee
c
e1
Notes: 1. Pulse test, t 300s; duty cycle, d 2%.
1 - Gate
2,4 - Drain
3 - Source
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXTA200N055T2
IXTP200N055T2
7V
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
200
180
160
140
120
100
80
V
= 15V
GS
300
250
200
150
100
50
V
= 15V
GS
8V
7V
8V
7V
10V
9V
10V
9V
6V
5V
6V
5V
60
40
20
0
0
0.0
-50
-50
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 100A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150oC
200
180
160
140
120
100
80
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
8V
7V
V
= 15V
GS
V
= 10V
GS
10V
9V
I
= 200A
D
I
= 100A
D
6V
5V
60
40
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-25
0
25
50
75
100
125
150
175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 100A Value vs.
Drain Current
Fig. 6. Drain Current vs. Case Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
140
120
100
80
T
= 175oC
J
External Lead Current Limit
V
= 10V
15V
GS
60
T
J
= 25oC
40
20
0
-25
0
25
50
75
100
125
150
175
50
100
150
200
250
300
ID - Amperes
TC - Degrees Centigrade
© 2018 IXYS CORPORATION, All Rights Reserved
IXTA200N055T2
IXTP200N055T2
Fig. 7. Input Admittance
Fig. 8. Transconductance
200
180
160
140
120
100
80
140
120
100
80
T
= - 40oC
J
25oC
150oC
T
J
= 150oC
60
25oC
- 40oC
60
40
40
20
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
1.3
40
0
0
1
20
40
60
80
100
120
140
160
180
200
110
100
VGS - Volts
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
10
9
8
7
6
5
4
3
2
1
0
280
240
200
160
120
80
V
= 28V
DS
I
I
= 100A
D
G
= 10mA
T
J
= 150oC
T
J
= 25oC
40
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
10
20
30
40
50
60
70
80
90
100
QG - NanoCoulombs
VSD - Volts
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1,000
100
10
10,000
1,000
100
R
Limit
)
DS(
on
C
iss
25μs
100μs
External Lead Limit
1ms
C
oss
TJ = 175oC
TC = 25oC
10ms
100ms
C
= 1 MHz
5
f
rss
Single Pulse
DC
1
0
10
15
20
25
30
35
10
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA200N055T2
IXTP200N055T2
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
24.0
23.5
23.0
22.5
22.0
21.5
21.0
20.5
20.0
25
24
23
22
21
20
19
R
= 3.3Ω
V
= 10V
GS
G
R
= 3.3Ω
V
= 10V
GS
G
V
= 30V
DS
V
= 30V
DS
T = 125oC
J
I
= 50A
D
T = 25oC
J
I
= 25A
D
25
35
45
55
65
75
85
95
105
115
125
25
30
35
40
45
50
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on
Fig. 16. Resistive Turn-off
Switching Times vs. Gate Resistance
Switching Times vs. Junction Temperature
140
120
100
80
52
30
29
28
27
26
25
24
23
90
80
70
60
50
40
30
20
t r
td(on)
t f
td(off)
TJ = 125oC, V = 10V
48
44
40
36
32
28
24
GS
R
G
= 3.3Ω, VGS = 10V
V
= 30V
DS
VDS = 30V
ID = 25A
I
= 50A, 25A
D
60
ID = 50A
40
20
0
25
35
45
55
65
75
85
95
105
115
125
4
6
8
10
12
14
16
18
20
TJ - Degrees Centigrade
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
29
28
27
26
25
24
80
140
120
100
80
240
200
160
120
80
t f
td(off)
t f
td(off)
T = 125oC, VGS = 10V
RG = 3.3Ω, VGS = 10V
J
70
60
50
40
30
VDS = 30V
VDS = 30V
T = 125oC
J
I
= 25A
D
60
I
= 50A
D
T = 25oC
J
40
40
20
0
25
30
35
40
45
50
4
6
8
10
12
14
16
18
20
ID - Amperes
RG - Ohms
© 2018 IXYS CORPORATION, All Rights Reserved
IXTA200N055T2
IXTP200N055T2
Fig. 19. Maximum Transient Thermal Impedance
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_200N055T2 (V5) 7-10-18-D
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