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IXTA1N300P3HV [IXYS]

Power Field-Effect Transistor,;
IXTA1N300P3HV
型号： IXTA1N300P3HV
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Power Field-Effect Transistor,
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Advance Technical Information  
High Voltage  
Power MOSFET  
VDSS  
ID25  
RDS(on)  50  
= 3000V  
= 1.00A  
IXTA1N300P3HV  
IXTH1N300P3  
N-Channel Enhancement Mode  
TO-263HV (IXTA)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
3000  
3000  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
D (Tab)  
ID25  
ID110  
IDM  
TC = 25C  
TC = 110C  
TC = 25C, Pulse Width Limited by TJM  
1.00  
0.65  
2.60  
A
A
A
S
G = Gate  
S = Source  
D
= Drain  
PD  
TC = 25C  
195  
W
Tab = Drain  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
FC  
Mounting Force (TO-263)  
Mounting Torque (TO-247)  
10..65 / 22..14.6  
1.13/10  
N/lb  
Md  
Nm/lb.in  
High Blocking Voltage  
High Voltage Package  
Weight  
TO-263  
TO-247  
2.5  
6.0  
g
g
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
3000  
2.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
VDS = 0.8 • VDSS, VGS = 0V  
V
V
Applications  
4.0  
High Voltage Power Supplies  
Capacitor Discharge Applications  
Pulse Circuits  
Laser and X-Ray Generation Systems  
100 nA  
IDSS  
25 A  
TJ = 125C  
250  A  
RDS(on)  
VGS = 10V, ID = 0.5A, Note 1  
50  
DS100590(01/14)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXTA1N300P3HV  
IXTH1N300P3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
D
A
A2  
A
gfs  
VDS = 50V, ID = 0.5A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
0.4  
0.7  
S
B
E
Q
Ciss  
Coss  
Crss  
895  
48  
pF  
pF  
pF  
S
D2  
P1  
R
D1  
D
4
17  
1
2
3
L1  
C
td(on)  
tr  
td(off)  
tf  
22  
35  
78  
60  
ns  
ns  
ns  
ns  
E1  
Resistive Switching Times  
VGS = 10V, VDS = 500V, ID = 0.5 • ID25  
RG = 20(External)  
L
A1  
b
C
b2  
1 - Gate  
b4  
e
2,4 - Drain  
3 - Source  
Qg(on)  
Qgs  
30.6  
4.0  
nC  
nC  
nC  
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25  
Qgd  
15.7  
RthJC  
RthCS  
0.64 C/W  
C/W  
TO-247  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
1
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
4
1.5  
V
IF = 1A, -di/dt = 100A/μs, VR = 100V  
1.8  
μs  
Note:  
1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
TO-263HV Outline  
E
A
L1  
C2  
D1  
D
H
3
E1  
1
2
A1  
L4  
L
L3  
GAUGE  
PLANE  
b2  
b
e2  
e1  
C
PIN: 1 - Gate  
08  
2 - Source  
3 - Drain  
A2  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA1N300P3HV  
IXTH1N300P3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Output Characteristics @ TJ = 125ºC  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= 10V  
7V  
V
= 10V  
GS  
GS  
6V  
6V  
5V  
5.5V  
5V  
4V  
4V  
0
20  
40  
60  
80  
100  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs.  
Drain Current  
Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs.  
Junction Temperature  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
V
= 10V  
GS  
GS  
T = 125ºC  
J
I
= 1A  
D
I
= 0.5A  
D
T = 25ºC  
J
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
T
J
= 125ºC  
25ºC  
- 40ºC  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VGS - Volts  
TC - Degrees Centigrade  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXTA1N300P3HV  
IXTH1N300P3  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
T
J
= 25ºC  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
VSD - Volts  
ID - Amperes  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
10,000  
1,000  
100  
10  
9
8
7
6
5
4
3
2
1
0
f
= 1 MHz  
V
= 1000V  
DS  
I
I
= 0.5A  
D
G
= 10mA  
C
iss  
C
oss  
Crss  
10  
0
4
8
12  
16  
20  
24  
28  
32  
0
5
10  
15  
20  
25  
30  
35  
40  
QG - NanoCoulombs  
VDS - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA1N300P3HV  
IXTH1N300P3  
Fig. 12. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
10  
10  
R
DS(on)  
Limit  
R
DS(on)  
Limit  
100µs  
1ms  
100µs  
1ms  
1
1
10ms  
0.1  
0.1  
DC  
10ms  
100ms  
DC  
T
= 150ºC  
= 75ºC  
100ms  
T
= 150ºC  
= 25ºC  
J
J
T
C
T
C
Single Pulse  
Single Pulse  
0.01  
0.01  
100  
1,000  
10,000  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_1N300P3(M4) 01-16-14  

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