IXTA1N80P [LITTELFUSE]
Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN;
| 型号： | IXTA1N80P |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
PolarTM
Power MOSFET
IXTU1N80P
IXTY1N80P
IXTA1N80P
IXTP1N80P
VDSS = 800V
ID25 = 1A
RDS(on) 14
TO-251 (IXTU)
N-Channel Enhancement Mode
Avalanche Rated
G
D
S
D (Tab)
TO-252 (IXTY)
G
S
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
800
800
V
V
D (Tab)
VDGR
TJ = 25C to 150C, RGS = 1M
TO-263 (IXTA)
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
S
ID25
IDM
TC = 25C
1
2
A
A
D (Tab)
TC = 25C, Pulse Width Limited by TJM
TO-220 (IXTP)
IA
TC = 25C
TC = 25C
1
A
EAS
75
mJ
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
5
V/ns
W
G
D
D (Tab)
S
42
TJ
-55 ... +150
150
C
C
C
G = Gate
S = Source
D
= Drain
TJM
Tstg
Tab = Drain
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
FC
Md
Mounting Force (TO-263 & TO-251)
Mounting Torque (TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
Weight
TO-251
TO-252
TO-263
TO-220
0.40
0.35
2.50
3.00
g
g
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 50μA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
800
V
Applications
2.0
4.0
V
DC-DC Converters
Switch-Mode and Resonant-Mode
100 nA
A
Power Supplies
AC and DC Motor Drives
IDSS
3
TJ = 125C
30 A
Discharge Circiuts in Lasers, Spark
Igniters, RF Generators
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
10
14
High Voltage Pulse Power
Applications
DS100112A(6/17)
© 2017 IXYS CORPORATION, All Rights Reserved
IXTU1N80P IXTY1N80P
IXTA1N80P IXTP1N80P
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
0.30
0.55
S
Ciss
Coss
Crss
250
22
pF
pF
pF
5.3
Qg(on)
Qgs
9.0
1.4
5.5
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
td(on)
tr
td(off)
tf
20
18
58
42
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 50(External)
RthJC
RthCS
3.0 C/W
C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
1
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
4
1.3
V
IF = 1A, -di/dt = 100A/μs, VR = 100V
700
ns
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXTU1N80P IXTY1N80P
IXTA1N80P IXTP1N80P
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
1.0
0.8
0.6
0.4
0.2
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
= 10V
GS
V
= 10V
8V
GS
8V
7V
7V
6V
6V
5V
5V
0
1
2
3
4
5
6
7
8
9
10
11
12
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
2.8
1.0
0.8
0.6
0.4
0.2
0.0
V
= 10V
7V
GS
V
= 10V
GS
2.4
2.0
1.6
1.2
0.8
0.4
6V
5V
I
= 1A
D
I
= 0.5A
D
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
20
22
24
26
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 0.5A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs. Case Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.5
2.0
1.5
1.0
0.5
V
= 10V
GS
o
T = 125 C
J
o
T = 25 C
J
-50
-25
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
TC - Degrees Centigrade
ID - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved
IXTU1N80P IXTY1N80P
IXTA1N80P IXTP1N80P
Fig. 8. Transconductance
Fig. 7. Input Admittance
1.0
0.8
0.6
0.4
0.2
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
o
T
J
= - 40 C
V
= 10V
DS
V
= 10V
DS
o
25 C
o
125 C
o
T
J
= 125 C
o
25 C
- 40oC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
ID - Amperes
VGS - Volts
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
10
9
8
7
6
5
4
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 400V
DS
I
I
= 0.5A
D
G
= 10mA
o
T = 125 C
J
o
T = 25 C
J
58
0.4
0.5
0.6
0.7
0.8
0.9
0
1
2
3
4
6
7
9
10
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Maximum Transient Thermal Impedance
1,000
100
10
4
= 1 MHz
f
C
C
iss
1
oss
C
rss
1
0.1
0.0001
0
5
10
15
20
25
30
35
40
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_1N80P(1A) 6-20-17-B
IXTU1N80P IXTY1N80P
IXTA1N80P IXTP1N80P
TO-252 AA Outline
TO-263 Outline
TO-220 Outline
A
E
b3
A
C2
E
E1
4
c2
L3
4
L1
D1
D
A1
A2
L2
H
H
A1
L4
1
3
2
1
2
3
L1
b2
L
c
b2
b
L3
c
1 - Gate
2,4 - Drain
3 - Source
e
e
e
e1
0.43 [11.0]
L2
e1
0
0
5.55MIN
OPTIONAL
0.34 [8.7]
0.66 [16.6]
A2
6.50MIN
4
1 - Gate
2,4 - Drain
3 - Source
0.20 [5.0]
0.10 [2.5]
0.12 [3.0]
0.06 [1.6]
6.40
2.28
2.85MIN
1.25MIN
BOTTOM
VIEW
1 - Gate
2,4 - Drain
3 - Source
LAND PATTERN RECOMMENDATION
TO-251 OUTLINE
© 2017 IXYS CORPORATION, All Rights Reserved
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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