KDS3912 [KEXIN]
100V Dual N-Channel PowerTrench MOSFET; 100V双N沟道PowerTrench MOSFET
| 型号： | KDS3912 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | 100V Dual N-Channel PowerTrench MOSFET |
| 文件： | 总2页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
IC
100V Dual N-Channel PowerTrench MOSFET
KDS3912
Features
3 A, 100 V. RDS(ON) = 125m @ VGS = 10 V
RDS(ON) = 135m @ VGS = 6 V
Low gate charge (14 nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Symbol
VDSS
Rating
Unit
V
100
Gate to Source Voltage
VGS
V
20
Drain Current Continuous (Note 1a)
Drain Current Pulsed
3
A
ID
20
A
Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
Power Dissipation for Single Operation (Note 1b)
Power Dissipation for Single Operation (Note 1c)
Operating and Storage Temperature
PD
1.6
W
1
0.9
PD
W
0.9
TJ, TSTG
-55 to 175
40
Thermal Resistance Junction to Case (Note 1)
Thermal Resistance Junction to Ambient (Note 1a)
R
R
JC
JA
/W
/W
78
1
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SMD Type
IC
KDS3912
Electrical Characteristics Ta = 25
Parameter
Symbol
WDSS
IAR
Testconditons
Single Pulse,VDD=50V,ID=3A(Not 2)
( Not 2)
Min
100
Typ
108
Max
90
Unit
mJ
A
Single Pulse Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
3.0
BVDSS
V
VGS = 0 V, ID = 250
A
Breakdown Voltage Temperature Coefficient
ID = 250 A, Referenced to 25
mV/
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
Gate Threshold Voltage
IDSS
IGSSF
IGSSR
VGS(th)
VDS = 80 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
10
100
-100
4
A
nA
nA
V
2
2.5
-6
VDS = VGS, ID = 250
A
Gate Threshold Voltage Temperature
Coefficient
ID = 250 A, Referenced to 25
mV/
m
VGS = 10 V, ID = 3 A
92
98
125
135
250
Static Drain-Source On-Resistance
RDS(on)
VGS = 6 V, ID = 2.8 A
VGS = 10 V, ID =3 A,TJ = 125
VGS = 10 V, VDS = 10V
VDS = 10 V, ID = 3A
175
On-State Drain Current
Forward Transconductance
Input Capacitance
ID(on)
gFS
Ciss
Coss
Crss
td(on)
tr
10
A
11
632
40
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS = 50 V, VGS = 0 V,f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
20
8.5
2
17
4
VDD = 50 V, ID = 1 A,VGS = 10 V,
RGEN = 6
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
tf
23
37
9
4.5
14
Total Gate Charge
Qg
20
VDS = 50 V, ID = 3 A,VGS = 10 V
(Note 2)
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
2.4
3.8
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.3
1.2
A
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
VSD
trr
VGS = 0 V, IS = 1.3 A (Not 2)
IF = 3A
0.76
30
V
nS
nC
Qrr
106
diF/dt = 100 A/
s (Not 2)
2
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