KDS4559 [TYSEMI]
N-Channel 4.5 A, 60 V RDS(ON) = 55m RDS(ON) = 75m 3.5 A, -60 V RDS(ON) = 105; N沟道4.5 A ， 60 V的RDS （ ON） = 55米RDS （ ON） = 75米3.5 A， -60 V的RDS （ ON） = 105
| 型号： | KDS4559 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | N-Channel 4.5 A, 60 V RDS(ON) = 55m RDS(ON) = 75m 3.5 A, -60 V RDS(ON) = 105 |
| 文件： | 总3页 (文件大小：603K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TransistIoCICrs
Product specification
KDS4559
Features
N-Channel
4.5 A, 60 V RDS(ON) = 55m @ VGS = 10 V
RDS(ON) = 75m @ VGS =4.5V
P-Channel
-3.5 A, -60 V RDS(ON) = 105 m @ VGS =- 10 V
RDS(ON) = 135 m @ VGS =-4.5V
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Symbol
VDSS
N-Channel
P- Channel
-60
20
Unit
V
60
20
4.5
20
Gate to Source Voltage
VGS
V
Drain Current Continuous (Note 1a)
Drain Current Pulsed
-3.5
-20
A
ID
A
2
Power Dissipation for Single Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
PD
W
1.6
PD
1.2
W
1
-55 to 175
78
(Note 1c)
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
TJ, TSTG
R
R
JA
JC
/W
/W
40
Thermal Resistance Junction to Case
(Note 1)
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TransistIoCICrs
Product specification
KDS4559
Electrical Characteristics Ta = 25
Testconditons
VDD = 30 V, ID = 4.5 A
Parameter
Symbol
WDSS
IAR
Min Typ Max Unit
Single Pulse Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
N-Ch
N-Ch
N-Ch
P-Ch
N-Ch
90
mJ
A
4.5
60
VGS = 0 V, ID = 250
VGS = 0 V, ID = -250
A
Drain-Source Breakdown Voltage
BVDSS
V
-60
A
58
ID = 250 A, Referenced to 25
ID = -250 A, Referenced to 25
VDS = 48V, VGS = 0 V
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
mV/
P-Ch
N-Ch
P-Ch
N-Ch
-49
1
IDSS
A
VDS = -48 V, VGS = 0 V
-1
VGS = 20V, VDS = 0 V
VGS = 20 V, VDS = 0 V
100
Gate-Body Leakage
IGSS
nA
P-Ch
N-Ch
P-Ch
100
3
1
2.2
VDS = VGS, ID = 250
VDS = VGS, ID = -250
A
Gate Threshold Voltage
VGS(th)
V
-1
-1.6
-3
A
N-Ch
P-Ch
-5.5
4
ID = 250 A, Referenced to 25
ID = -250 A, Referenced to 25
VGS = 10 V, ID =4.5A
Gate Threshold Voltage Temperature
Coefficient
mV/
42
72
55
82
55
94
Static Drain-Source On-Resistance
Static Drain-Source On-Resistance
RDS(on)
N-Ch
P-Ch
VGS = 10 V, ID = 4.5 A,TJ = 125
VGS = 4.5 V, ID =4 A
75
m
VGS = -10 V, ID =-3.5 A
VGS = -10 V, ID =-3.5 A,TJ = 125
VGS = -4.5 V, ID =-3.1A
VGS = 10 V, VDS = 5V
105
RDS(on)
130 190
105 135
N-Ch
P-Ch
N-Ch
20
On-State Drain Current
ID(on)
A
S
VGS = -10 V, VDS = -5V
VDS = 10V, ID = 4.5A
-20
14
Forward Transconductance
gFS
VDS = -5V, ID = -3.5A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9
650
759
80
N-Channel
Input Capacitance
Ciss
Coss
Crss
td(on)
pF
pF
pF
ns
VDS = 25 V, VGS = 0 V,f = 1.0 MHz
Output Capacitance
90
P-Channel
VDS = -30 V, VGS = 0 V,f = 1.0 MHz N-Ch
P-Ch
35
Reverse Transfer Capacitance
Turn-On Delay Time
39
N-Ch
P-Ch
N-Ch
11
7
20
14
18
N-Channel
VDD = 30 V, ID = 1 A,
8
VGS = 10 V, RGEN = 6 (Note 2)
Turn-On Rise Time
tr
ns
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
10
19
20
35
34
15
22
18
21
P-Channel
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(off)
ns
ns
VDD = -30 V, ID = -1 A,
VGS = -10 V, RGEN = 6 (Note 2)
19
6
tf
12
12.5
15
N-Channel
Qg
nC
nC
nC
VDS =30V,ID=4.5A,VGS=10V
(Note 2)
2.4
2.5
2.6
3.0
Qgs
Qgd
P-Channel
VDS=-30V,ID=-3.5A,VGS=-10V
(Note 2)
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TransistIoCICrs
Product specification
KDS4559
Electrical Characteristics Ta = 25
Testconditons
Parameter
Symbol
IS
Min Typ Max Unit
N-Ch
1.3
-1.3
1.2
Maximum Continuous Drain-Source Diode
Forward Current
A
V
P-Ch
N-Ch
P-Ch
VGS = 0 V, IS = 1.3A (Not 2)
VGS = 0 V, IS = -1.3A (Not 2)
0.8
Drain-Source Diode Forward Voltage
VSD
-0.8 -1.2
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