KDS4470 [TYSEMI]
12.5 A, 40 V. RDS(ON) = 9m VGS = 10 V High power and current handling capability; 12.5 A， 40 V的RDS （ ON） = 9米VGS = 10V高功率和电流处理能力
| 型号： | KDS4470 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | 12.5 A, 40 V. RDS(ON) = 9m VGS = 10 V High power and current handling capability |
| 文件： | 总2页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFIECT
I
C
Product specification
KDS4470
Features
12.5 A, 40 V. RDS(ON) = 9m @ VGS = 10 V
Low gate charge (45 nC typical)
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Symbol
VDSS
Rating
40
Unit
V
Gate to Source Voltage
VGS
+30/-20
12.5
50
V
Drain Current Continuous (Note 1a)
Drain Current Pulsed
A
ID
A
Power dissipation
Power dissipation
Power dissipation
(Note 1a)
2.5
PD
W
(Note 1b)
(Note 1c)
1.4
1.2
Operating and Storage Temperature Range
TJ, TSTG
-55 to 175
50
Thermal Resistance Junction to Ambient (Note 1a)
Thermal Resistance Junction to Ambient (Note 1c)
Thermal Resistance Junction to Case (Note 1)
R
R
R
JA
JA
JC
/W
/W
/W
125
25
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MOSFIECT
I
C
Product specification
KDS4470
Electrical Characteristics Ta = 25
Parameter
Symbol
EAS
Testconditons
Single Pulse,VDD=40V,ID=12.5A( Not 2)
( Not 2)
Min
40
Typ
Max
370
Unit
mJ
A
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
IAS
12.5
BVDSS
V
VGS = 0 V, ID = 250
A
Breakdown Voltage Temperature Coefficient
42
ID = 250 A, Referenced to 25
mV/
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
Gate Threshold Voltage
IDSS
IGSSF
IGSSR
VGS(th)
VDS = 32 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
1
100
-100
5
A
nA
nA
V
2
3.9
-8
VDS = VGS, ID = 250
A
Gate Threshold Voltage Temperature
Coefficient
ID = 250 A, Referenced to 25
mV/
m
VGS = 10 V, ID = 12.5 A
VGS = 10 V, ID =12.5 A,TJ = 125
VGS = 10 V, VDS = 5 V
6
9
9
Static Drain-Source On-Resistance
RDS(on)
14
On-State Drain Current
Forward Transconductance
Input Capacitance
ID(on)
gFS
Ciss
Coss
Crss
td(on)
tr
25
A
VDS = 10V, ID = 12.5 A
45
2659
605
298
14
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS = 20 V, VGS = 0 V,f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
25
22
59
46
63
12
VDD = 20 V, ID = 1 A,VGS = 10 V, RGEN =
6
(Note 2)
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
tf
37
29
Total Gate Charge
Qg
45
VDS = 20 V, ID = 12.5 A,VGS = 10 V
(Note 2)
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
27
5
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.1
1.2
A
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
VSD
trr
VGS = 0 V, IS = 2.1 A (Not 2)
0.7
33
39
V
nS
nC
IF = 12.5 A, diF/dt = 100 A/
s
Qrr
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2 of 2
4008-318-123
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