KDS4501H [KEXIN]
Complementary PowerTrench Half-Bridge MOSFET; 互补的PowerTrench半桥MOSFET
| 型号： | KDS4501H |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Complementary PowerTrench Half-Bridge MOSFET |
| 文件： | 总3页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Complementary PowerTrench Half-Bridge MOSFET
KDS4501H
Features
N-Channel
9.3 A, 30 V RDS(ON) = 18m @ VGS = 10 V
RDS(ON) = 23m @ VGS =4.5V
P-Channel
-5.6 A, -20 V RDS(ON) = 46 m @ VGS =- 4.5 V
RDS(ON) = 63 m @ VGS =-2.5V
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Symbol
VDSS
N-Channel
30
20
P- Channel
Unit
V
-20
8
Gate to Source Voltage
VGS
V
Drain Current Continuous (Note 1a)
Drain Current Pulsed
9.3
20
-5.6
-20
A
ID
A
2.5
1.2
1
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
PD
W
(Note 1c)
-55 to 150
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
TJ, TSTG
50
25
R
R
JA
JC
/W
/W
Thermal Resistance Junction to Case
(Note 1)
1
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SMD Type
Transistors
KDS4501H
Electrical Characteristics Ta = 25
Testconditons
VGS = 0 V, ID = 250
VGS = 0 V, ID = -250
Parameter
Symbol
BVDSS
Min
30
Typ Max
Unit
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
A
Drain-Source Breakdown Voltage
-20
A
24
-13
1
ID = 250 A, Referenced to 25
ID = -250 A, Referenced to 25
VDS = 24V, VGS = 0 V
Breakdown Voltage Temperature
Coefficient
mV/
Zero Gate Voltage Drain Current
Gate-Body Leakage
IDSS
A
VDS = -16 V, VGS = 0 V
-1
VGS = 20V, VDS = 0 V
VGS = 8 V, VDS = 0 V
100
100
IGSS
nA
1
1.6
-0.7
-4
3
VDS = VGS, ID = 250
VDS = VGS, ID = -250
A
Gate Threshold Voltage
VGS(th)
V
-0.4
-1.5
A
ID = 250 A, Referenced to 25
Gate Threshold Voltage Temperature
Coefficient
mV/
P-Ch
3
ID = -250 A, Referenced to 25
VGS = 10 V, ID =9.3A
14
21
17
36
49
47
18
29
23
46
80
63
Static Drain-Source On-Resistance
Static Drain-Source On-Resistance
RDS(on)
N-Ch
VGS = 10 V, ID = 9.3 A,TJ = 125
VGS = 4.5 V, ID =7.6 A
m
VGS = -4.5 V, ID =-5.6 A
VGS = -4.5 V, ID =-5.6 A,TJ = 125
VGS = -2.5 V, ID =-5.0A
VGS = 10 V, VDS = 5V
RDS(on)
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
On-State Drain Current
Forward Transconductance
Input Capacitance
ID(on)
A
S
VGS = -4.5 V, VDS = -5V
VDS = 5V, ID = 9.3A
-20
28
16
gFS
VDS = 5V, ID = -5.6A
1958
1312
Ciss
pF
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
424
240
182
106
15
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Coss
Crss
td(on)
tr
pF
pF
ns
ns
ns
ns
VDS = 10 V, VGS = 0 V,f = 1.0 MHz
27
27
10
27
61
64
20
40
27
N-Channel
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 (Note 2)
15
5
15
38
P-Channel
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
VDD = -10 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6 (Note 2)
40
10
tf
25
17
N-Channel
Total Gate Charge
Qg
nC
VDS =15V,ID=9.3A,VGS=4.5V(Note 2)
P-Ch
N-Ch
13
4
21
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
nC
nC
P-Ch
N-Ch
P-Ch
2.5
5
P-Channel
VDS=-15V,ID=-2.4A,VGS=-4.5V(Note 2)
2.0
2
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SMD Type
Transistors
KDS4501H
Electrical Characteristics Ta = 25
Testconditons
Parameter
Symbol
IS
Min
Typ Max
2.1
Unit
A
N-Ch
P-Ch
N-Ch
P-Ch
Maximum Continuous Drain-Source
Diode Forward Current
-2.1
VGS = 0 V, IS = 2.1A (Not 2)
VGS = 0 V, IS = -2.1A (Not 2)
1.2
Drain-Source Diode Forward Voltage
VSD
V
-1.2
3
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