KDS4148U [KEC]
SILICON EPITAXIAL PLANAR DIODE; 硅外延平面二极管
| 型号： | KDS4148U |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SILICON EPITAXIAL PLANAR DIODE |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KDS4148U
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
G
B
FEATURES
1
Small Package : USC.
Low Forward Voltage.
Fast Reverse Recovery Time.
Small Total capacitance.
H
2
J
D
C
I
DIM
A
B
MILLIMETERS
_
2.50+0.1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
_
+
1.25 0.05
_
+
0.90 0.05
C
SYMBOL RATING
UNIT
V
D
E
0.30+0.06/-0.04
M
M
_
1.70+0.05
VRM
VR
IFM
IO
Maximum (Peak) Reverse Voltage
Reverse Voltage
100
F
MIN 0.17
_
0.126+0.03
G
H
I
75
V
1. ANODE
0~0.1
1.0 MAX
_
0.15+0.05
2. CATHODE
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
450
mA
mA
A
J
_
0.4+0.05
K
L
150
2
+4/-2
4~6
M
IFSM
PD
2
-
Power Dissipation
mW
USC
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55 150
Marking
Type Name
U H
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
VF(1)
VF(2)
VF(3)
IR
TEST CONDITION
MIN.
TYP.
0.60
0.72
0.90
-
MAX.
-
UNIT
V
IF=1mA
-
-
-
-
-
-
IF=10mA
Forward Voltage
-
IF=100mA
VR=75V
1.20
0.5
2.0
4.0
Reverse Current
A
pF
nS
CT
VR=0V, f=1MHz
IF=10mA
Total Capacitance
Reverse Recovery Time
0.9
trr
1.6
2004. 10. 5
Revision No : 1
1/2
KDS4148U
IF - VF
IR - VR
10 3
10
1
10 2
10
Ta=100 C
Ta=75 C
10-1
10-2
10-3
Ta=50 C
Ta=25 C
1
10-1
10-2
0
0
20
40
60
80
0.2
0.4
0.6
0.8
1.0
1.2
FORWARD VOLTAGE V (V)
F
REVERSE VOLTAGE V (V)
R
t rr - I F
CT - VR
100
2.0
1.6
1.2
0.8
0.4
0
Ta=25 C
Fig. 1
f=1MHz
Ta=25 C
50
30
10
5
3
1
0.5
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
FORWARD CURRENT I (mA)
F
REVERSE VOLTAGE V (R)
R
Fig. 1. REVERSE RECOVERY TIME(t ) TEST CIRCUIT
rr
INPUT
WAVEFORM
INPUT
DUT
WAVEFORM
0.01µF
OUTPUT
SAMPLING
OSCILLOSCOPE
0
I
=10mA
0
F
0.1 I
R
(R =50Ω)
IN
-6V
I
R
50ns
E
t
rr
PULSE GENERATOR
(R =50Ω)
OUT
2004. 10. 5
Revision No : 1
2/2
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