2SC3646 [KEXIN]
High-Voltage Switching Applications; 高压开关的应用
| 型号： | 2SC3646 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | High-Voltage Switching Applications |
| 文件： | 总3页 (文件大小：511K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
High-Voltage Switching Applications
2SC3646
Features
Adoption of FBET, MBIT Processes
High Breakdown Voltage and Large Current Capacity
Fast Switching Time
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
120
100
V
6
V
Collector Current
1
A
Collector Current (Pulse)
ICP
2
500
A
PC
mW
W
Collector Power Dissipation
PC *
Tj
1.3
Jumction temperature
150
Storage temperature Range
Tstg
-55 to +150
* Mounted on ceramic board (250 mm2 x 0.8 mm)
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
IEBO
Testconditons
Min
Typ
Max
100
100
Unit
nA
nA
V
Collector Cut-off Current
VCB = 100V , IE = 0
VEB = 4V , IC = 0
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
V(BR)CBO IC = 10uA , IE = 0
V(BR)CEO
120
100
6
V
IC = 1mA , RBE =
V(BR)EBO IE = 10uA , IC = 0
hFE VCE = 5V , IC = 100mA
V
100
400
0.6
1.2
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain-Bandwidth Product
VCE(sat) IC = 400mA , IB = 40mA
VBE(sat) IC = 400mA , IB = 40mA
0.2
0.85
120
13
V
V
fT
VCE = 10V , IC = 100mA
MHz
pF
Collector Output Capacitance
Cob
VCB = 10V , IE = 0 , f = 1MHz
Turn-On Time
Storage Time
Fall Time
ton
tstg
tf
80
700
40
See Test Circuit.
ns
1
www.kexin.com.cn
SMD Type
Transistors
2SC3646
Test Circuit
hFE Classification
CB
S
Marking
Rank
R
T
hFE
100
200
140
280
200
400
Electrical Characteristics Curves
2
www.kexin.com.cn
SMD Type
Transistors
2SC3646
3
www.kexin.com.cn
相关型号：
©2020 ICPDF网 联系我们和版权申明