KDR582E [KEC]
SCHOTTKY BARRIER TYPE DIODE; 肖特基型二极管
| 型号： | KDR582E |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SCHOTTKY BARRIER TYPE DIODE |
| 文件： | 总2页 (文件大小：347K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KDR582E
SCHOTTKY BARRIER TYPE DIODE
TECHNICAL DATA
FOR HIGH SPEED SWITCHING.
C
E
FEATURES
1
Low reverse current, low capacitance.
Small package : ESC.
2
D
F
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
DIM MILLIMETERS
SYMBOL RATING
UNIT
V
_
A
B
C
D
E
F
1.60+0.10
_
1.20+0.10
VR
VR
IF
Repetitive Peak Reverse Voltage
Reverse Voltage
4
_
0.80+0.10
_
0.30+0.05
4
V
_
+
0.60 0.10
_
1. ANODE
2. CATHODE
+
0.13 0.05
Forward Current
130
150
150
mA
mW
PD*
Tj
Power Dissipation
Junction Temperature
Storage Temperature Range
Tstg
-55 150
ESC
* Mounted on a glass epoxy circuit board of 20 20 , Pad Dimension of 4
4
Marking
Type Name
S4
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
0.2
0.25
0.35
-
TYP.
MAX.
0.35
0.45
0.6
UNIT
V
IF=0.1mA
-
-
-
-
-
-
-
VF
IF=1mA
IF=10mA
VR=3V
Forward Voltage
0.25
1.25
0.75
15
IR
Reverse Current
A
-
VR=3V, TA=60
CT
rS
VR=0V, f=1MHz
IF=5mA, f=10kHz
Total Capacitance
Series Resistance
0.4
-
pF
2006. 11. 23
Revision No : 0
1/2
KDR582E
C
- V
R
I
- V
R
T
R
103
102
101
100
1.0
0.8
0.6
0.4
0.2
0.0
f=1MHz
Ta=25 C
0
2
4
6
8
10
0
2
4
6
8
10
Reverse Current VR (V)
Reverse Voltage VR (V)
VF - IF
100
f=1MHz
10-1
10-2
0
0.1
0.2
0.3
0.4
0.5
Forward Voltage VF (V)
2006. 11. 23
Revision No : 0
2/2
相关型号：
KDR720S
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
KEC
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