KDR582S [KEC]
SCHOTTKY BARRIER TYPE DIODE; 肖特基型二极管
| 型号： | KDR582S |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SCHOTTKY BARRIER TYPE DIODE |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KDR582S
SCHOTTKY BARRIER TYPE DIODE
TECHNICAL DATA
FOR HIGH SPEED SWITCHING.
FEATURES
E
· Low reverse current, low capacitance.
L
B
L
DIM MILLIMETERS
_
+
2.93 0.20
A
B
C
D
E
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
2
3
1
G
H
J
0.95
MAXIMUM RATING (Ta=25℃)
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
K
L
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
SYMBOL RATING
UNIT
V
P
P
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
VR
VR
IF
4
4
V
M
Forward Current
130
mA
℃
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55∼ 150
℃
SOT-23
Marking
Lot No.
Type Name
MC
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
0.2
0.25
0.35
-
TYP.
MAX.
0.35
0.45
0.6
UNIT
V
IF=0.1mA
-
-
-
-
-
-
-
VF
IF=1mA
Forward Voltage
IF=10mA
VR=3V
0.25
1.25
0.75
15
IR
Reverse Current
μA
VR=3V, TA=60℃
VR=0V, f=1MHz
IF=5mA, f=10kHz
-
CT
rS
Total Capacitance
Series Resistance
0.4
-
pF
Ω
2009. 12. 9
Revision No : 0
1/2
KDR582S
C
- V
R
I
- V
R
T
R
103
102
101
100
1.0
0.8
0.6
0.4
0.2
0.0
f=1MHz
Ta=25 C
0
2
4
6
8
10
0
2
4
6
8
10
Reverse Current VR (V)
Reverse Voltage VR (V)
VF - IF
100
f=1MHz
10-1
10-2
0
0.1
0.2
0.3
0.4
0.5
Forward Voltage VF (V)
2009. 12. 9
Revision No : 0
2/2
相关型号：
KDR720S
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
KEC
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