KDR701S [KEC]
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH FREQUENCY RECTIFICATION); 肖特基型二极管（高频整流）
| 型号： | KDR701S |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SCHOTTKY BARRIER TYPE DIODE(FOR HIGH FREQUENCY RECTIFICATION) |
| 文件： | 总2页 (文件大小：387K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KDR701S
SCHOTTKY BARRIER TYPE DIODE
TECHNICAL DATA
For High frequency rectification
E
L
B
L
FEATURES
DIM
A
MILLIMETERS
_
Low Forward Voltage : VF max=0.55V.
IR=700mA recification possible.
+
2.93 0.20
B
C
D
E
1.30+0.20/-0.15
1.30 MAX
2
3
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
1
G
H
J
0.95
0.13+0.10/-0.05
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
K
L
0.00 ~ 0.10
0.55
P
P
SYMBOL
VRRM
VR
RATING
UNIT
V
0.20 MIN
1.00+0.20/-0.10
7
M
N
P
Repetitive Peak Reverse Voltage
Reverse Voltage
30
30
M
V
3
IO
Average Forward Current
Non-repetitive peak surge current
Junction Temperature
0.7
A
1. NC
2. ANODE
3. CATHODE
IFSM
Tj
5
A
2
1
125
Tstg
Storage Temperature
-55 125
SOT-23
Marking
Lot No.
Type Name
DK
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Reverse Voltage
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
VR
VF
IR
IR=1mA
IF=0.7A
VR=30V
30
-
-
-
-
0.55
80
-
Forward Voltage
V
Reverse Current
-
-
A
CT
trr
VR=0V, f=1MHz
IR=IF=100mA
Total Capacitance
Reverse Recovery Time
-
190
7.5
pF
nS
-
-
2003. 2. 25
Revision No : 1
1/2
KDR701S
I R - VR
IF - VF
50
30
Ta=25 C
103
102
Ta=25 C
10
10
1
5
3
0.1
0.01
0.001
1
0
5
10
15
20
25
30
0
100
200
300
400
500
REVERSE VOLTAGE V (V)
R
FORWARD VOLTAGE V (V)
F
I R - Ta
VF - Ta
104
103
0.8
Ta=25 C
I
=700mA
F
0.7
0.6
0.5
0.4
0.3
0.2
102
10
1
-40
0
40
80
120
160
-40
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta ( C)
AMBIENT TEMPERATURE Ta ( C)
CT - VR
200
180
160
140
120
100
80
60
40
20
0
0
5
10
15
20
25
30
REVERSE VOLTAGE V (V)
R
2003. 2. 25
Revision No : 1
2/2
相关型号：
KDR720S
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
KEC
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