KDR728E [KEC]
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING); 肖特基型二极管（低电压高开关速度）
| 型号： | KDR728E |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) |
| 文件： | 总2页 (文件大小：389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KDR728E
SCHOTTKY BARRIER TYPE DIODE
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
C
E
Low Forward Voltage : VF(2)=0.42(Typ.)
Small Package : ESC.
1
2
D
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
F
SYMBOL
VRM
VR
RATING
30
UNIT
V
DIM MILLIMETERS
_
Maximum (Peak) Reverse Voltage
Reverse Voltage
A
B
C
D
E
F
1.60+0.10
_
1.20+0.10
30
V
_
0.80+0.10
_
0.30+0.05
IFM
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
150
mA
mA
mA
mW
_
+
0.60 0.10
_
+
0.13 0.05
1. ANODE
IO
30
2. CATHODE
IFSM
PD
200
Power Dissipation
150*
125
Tj
Junction Temperature
ESC
Tstg
Storage Temperature Range
-55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
Marking
Type Name
U T
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
VF(1)
VF(2)
IR
TEST CONDITION
MIN.
TYP.
0.3
0.42
-
MAX.
0.4
UNIT
V
IF=1mA
-
-
-
-
Forward Voltage
IF=30mA
0.55
300
-
VR=30V
Reverse Current
A
CT
VR=1V, f=1MHz
Total Capacitance
6.5
pF
2003. 7. 8
Revision No : 2
1/2
KDR728E
IF - VF
IR
-
VR
10 2
10
1
10
1
Ta=25 C
Ta=25 C
10 -1
10 -2
10-1
10 -3
10 -4
10-2
0
0.1
0.2
0.3
0.4
0.5
0
5
10
15
20
25
30
FORWARD VOLTAGE V (V)
F
REVERSE VOLTAGE V (V)
R
CT
-
VR
2
10
f=1MHz
Ta=25 C
10
1
0
5
10
15
20
25
30
REVERSE VOLTAGE V (V)
R
2003. 7. 8
Revision No : 2
2/2
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