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2SB649_2014 [JMNIC]

Silicon PNP Power Transistors;
2SB649_2014
型号： 2SB649_2014
厂家： QUANZHOU JINMEI ELECTRONIC CO.,LTD.    QUANZHOU JINMEI ELECTRONIC CO.,LTD.
描述：

Silicon PNP Power Transistors
文件： 总4页 (文件大小：205K)
中文：  中文翻译
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JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB649 2SB649A  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type 2SD669/669A  
·High breakdown voltage VCEO:-120/-160V  
·High current -1.5A  
·Low saturation voltage,excellent hFE linearity  
APPLICATIONS  
·For low-frequency power  
amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings(Ta=25℃)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-180  
-180  
-120  
-160  
-5  
UNIT  
2SB649  
2SB649A  
2SB649  
2SB649A  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
V
VEBO  
IC  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
Open collector  
V
A
A
-1.5  
-3  
ICM  
Ta=25℃  
TC=25℃  
1
PD  
Total power dissipation  
W
20  
Tj  
Junction temperature  
Storage temperature  
150  
℃
℃
Tstg  
-55~150  
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB649 2SB649A  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
-120  
-160  
-180  
-180  
-5  
TYP.  
MAX  
UNIT  
2SB649  
2SB649A  
2SB649  
2SB649A  
Collector-emitter  
breakdown voltage  
V(BR)CEO  
IC=-10mA; RBE=∞  
V
Collector-base  
breakdown voltage  
V(BR)CBO  
IC=-1m A ;IE=0  
IE=-1mA ;IC=0  
V
V(BR)EBO  
VCEsat  
VBE  
Emitter-base breakdown voltage  
V
V
Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA  
-1.0  
-1.5  
-10  
Base-emitter voltage  
IC=-150mA ; VCE=5V  
VCB=-160V; IE=0  
V
ICBO  
Collector cut-off current  
μA  
2SB649  
60  
60  
30  
320  
200  
hFE-1  
DC current gain  
IC=-150mA ; VCE=-5V  
2SB649A  
hFE-2  
fT  
DC current gain  
IC=-0.5A ; VCE=-5V  
IC=-150mA ; VCE=-5V  
f=1MHz ; VCB=-10V  
Transition frequency  
140  
27  
MHz  
pF  
COB  
Collector output capacitance  
‹ hFE Classifications  
hFE-1  
B
C
D
2SB649  
2SB649A  
60-120  
60-120  
100-200  
100-200  
160-320  
2
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB649 2SB649A  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB649 2SB649A  
4

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