2SB656_15 [JMNIC]
Silicon PNP Power Transistors;
| 型号： | 2SB656_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：362K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2SB656
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·For use in power amplifier applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-160
-160
-5
UNIT
V
Open emitter
Open base
V
Open collector
V
-12
A
IB
Base current
-4
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
125
W
℃
℃
Tj
150
Tstg
-55~150
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2SB656
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
-160
-160
-5
TYP.
MAX
UNIT
V
IC=-50mA ;IB=0
IC=-1mA ;IE=0
V
IE=-1mA ;IC=0
V
IC=-10A; IB=-1A
VCB=-160V; IE=0
VEB=-5V; IC=0
-3.0
-0.1
-0.1
200
V
mA
mA
IEBO
Emitter cut-off current
hFE
DC current gain
IC=-1A ; VCE=-5V
IC=-1A ; VCE=-10V
60
fT
Transition frequency
20
MHz
hFE Classifications
B
C
60-120
100-200
2
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2SB656
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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