2SB668_15 [JMNIC]
Silicon PNP Power Transistors;
| 型号： | 2SB668_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SB668
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
APPLICATIONS
·For use in power amplifier and
switching applications
PINNING
PIN
1
DESCRIPTION
Base
Collector; connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
CONDITIONS
Open emitter
VALUE
-100
-100
-5
UNIT
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
V
Open collector
V
-3
A
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
-5
A
PC
TC=25℃
25
W
℃
℃
Tj
150
Tstg
-55~150
JMnic
Product Specification
Silicon PNP Power Transistors
2SB668
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
-100
-100
-5
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-10mA, IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=-1mA, IE=0
V
IE=-2mA, IC=0
V
IC=-2A ,IB=-8mA
IC=-2A ,IB=-8mA
VCB=-120V, IE=0
VCE=-100V, IB=0
VEB=-5V, IC=0
-2.0
-2.5
-100
-500
-2
V
V
μA
μA
mA
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
IC=-1A ; VCE=-3V
2000
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SB668
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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