2SB673 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管![2SB673](http://pdffile.icpdf.com/pdf1/p00144/img/icpdf/2SB673_794903_icpdf.jpg)
型号: | 2SB673 |
厂家: | ![]() |
描述: | Silicon PNP Power Transistors |
文件: | 总3页 (文件大小:112K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB673
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type 2SD633
APPLICATIONS
·High power switching applications
·Hammer drive,pulse motor drive applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Tc=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
-100
-100
-5
UNIT
V
V
V
A
A
W
ꢀ
Open base
Open collector
-7
IB
Base current
-0.2
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
40
Tj
150
Tstg
-55~150
ꢀ
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB673
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat-1
VCEsat-2
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-50mA, IB=0
-100
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=-3A ,IB=-6mA
IC=-7A ,IB=-14mA
IC=-3A ,IB=-6mA
VCB=-100V, IE=0
VEB=-5V; IC=0
-0.95
-1.3
-1.5
-2.0
V
V
-1.55
-2.5
V
-0.1
mA
mA
IEBO
-4.0
hFE-1
DC current gain
IC=-3A ; VCE=-3V
IC=-7A ; VCE=-3V
2000
1000
15000
hFE-2
DC current gain
Switching times
ton
tstg
tf
Turn-on time
0.8
2.0
2.5
µs
µs
µs
IB1=-IB2=-6mA
VCC=-45V,RL=15Ω
Storage time
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB673
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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