2SB655 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SB655 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB655
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-160
-160
-6
UNIT
V
Open emitter
Open base
V
Open collector
V
-12
A
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
-20
A
PC
TC=25ꢀ
100
W
ꢀ
Tj
150
Tstg
-40~150
ꢀ
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB655
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
-160
-160
-6
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-30mA ;IB=0
Collector-emitter breakdown voltage IC=-1mA ;IE=0
V
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IE=-1mA ;IC=0
V
IC=-6A; IB=-0.6A
IC=-1A ; VCE=-5V
VCB=-120V; IE=0
VEB=-4V; IC=0
-2.5
-1.5
-0.1
-0.1
200
V
V
ICBO
mA
mA
IEBO
hFE-1
IC=-1A ; VCE=-5V
IC=-5A ; VCE=-5V
IC=-1A ; VCE=-5V
35
20
hFE-2
DC current gain
fT
Transition frequency
20
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB655
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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