2SB653 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SB653 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB653
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·For low frequency power amplifier
applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-120
-120
-6
UNIT
V
Open emitter
Open base
V
Open collector
V
-7
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
60
W
ꢀ
Tj
150
Tstg
-55~150
ꢀ
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB653
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
Collector-emitter breakdown voltage IC=-30mA ;IB=0
-120
-120
-6
V
V
V
V
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
IC=-1mA ;IE=0
IE=-1mA ;IC=0
IC=-3A; IB=-0.3A
-1.5
-0.1
ICBO
Collector cut-off current
VCB=-120V; IE=0
mA
mA
IEBO
hFE
fT
Emitter cut-off current
DC current gain
VEB=-6V; IC=0
-0.1
200
IC=-1A ; VCE=-5V
IC=-1A ; VCE=-5V
35
Transition frequency
20
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB653
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
相关型号：
©2020 ICPDF网 联系我们和版权申明