2SB655 [ISC]
isc Silicon PNP Power Transistors; ISC的硅PNP功率晶体管
| 型号： | 2SB655 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon PNP Power Transistors |
| 文件： | 总2页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
2SB655
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
·High Power Dissipation-
: PC= 100W(Max)@TC=25℃
·Complement to Type 2SD675
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
-160
-160
-5
UNIT
V
V
V
Collector Current-Continuous
Collector Current-Peak
-12
A
ICM
-20
A
Collector Power Dissipation
@TC=25℃
PC
100
W
℃
℃
TJ
Junction Temperature
Storage Temperature
150
-55~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
2SB655
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
PARAMETER
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
CONDITIONS
IC= -50mA; RBE= ∞
IE= -5mA; IC= 0
MIN
-160
-5
TYP.
MAX
UNIT
V
V
IC= -6A; IB= -0.6A
IC= -1A; VCE= -5V
VCB= -120V; IE= 0
IC= -1A; VCE= -5V
IC= -6A; VCE= -5V
IC= -1A; VCE= -5V
-2.5
-1.5
-0.1
200
V
VCE
(sat)
(on)
V
VBE
ICBO
Collector Cutoff Current
mA
hFE-1
hFE-2
fT
DC Current Gain
60
20
DC Current Gain
Current-Gain—Bandwidth Product
22
MHz
hFE Classifications
B
C
60-120
100-200
isc Website：www.iscsemi.cn
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