IXTQ30N50L2 [IXYS]
Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode; 线性L2TM功率MOSFET，扩展FBSOA N沟道增强模式
| 型号： | IXTQ30N50L2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode |
| 文件： | 总5页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Linear L2TM Power
MOSFET with extended
FBSOA
N-Channel Enhancement Mode
IXTH30N50L2
IXTQ30N50L2
VDSS = 500V
ID25 = 30A
RDS(on) ≤ 200mΩ
IXTT30N50L2
D
O
TO-247 (IXTH)
RGi
ww
G
O
O
(TAB)
S
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
500
500
V
V
TO-3P (IXTQ)
VDGR
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
30
60
30
A
A
A
G
(TAB)
D
S
EAR
EAS
TC = 25°C
50
mJ
J
TO-268 (IXTT)
1.5
PD
TC = 25°C
400
W
TJ
-55 to +150
°C
°C
°C
G
S
(TAB)
TJM
Tstg
+150
-55 to +150
TL
1.6mm (0.063in) from case for 10s
Plastic body for 10s
300
260
°C
°C
G = Gate
S = Source TAB = Drain
D
= Drain
TSOLD
Md
Mounting torque (TO-247, TO-3P)
1.13/10
Nm/lb.in.
Weight
TO-247
TO-3P
TO-268
6.0
5.5
5.0
g
g
g
Features
z Designed for linear operation
z International standard packages
z Unclamped Inductive Switching
(UIS) rated.
Symbol
Test Conditions
Characteristic Values
z Molding epoxies meet UL 94 V-0
flammability classification
z Integrated gate resistor for easy
paralleling
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
500
2.5
V
V
z Guaranteed FBSOA at 75°C
4.5
IGSS
IDSS
VGS = ±30V, VDS = 0V
±100 nA
Applications
VDS = VDSS
VGS = 0V
50 μA
300 μA
z Solid state circuit breakers
z Soft start controls
z Linear amplifiers
z Programmable loads
z Current regulators
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25 , Note 1
200 mΩ
© 2008 IXYS CORPORATION, All rights reserved
DS99957A (04/08)
IXTH30N50L2 IXTQ30N50L2
IXTT30N50L2
Symbol
Test Conditions
Characteristic Values
TO-247 (IXTH) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
9
12
15
S
Ciss
Coss
Crss
8100
530
pF
pF
pF
∅ P
1
2
3
115
RGi
Integrated gate input resistor
3.5
Ω
td(on)
tr
td(off)
tf
35
117
94
ns
ns
ns
ns
Resistive Switching Times
e
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
RG = 0Ω (External)
40
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
240
58
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
135
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCS
0.31 °C/W
°C/W
(TO-247, TO-3P)
0.25
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Safe Operating Area Specification
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Symbol
SOA
Test Conditions
Min.
Typ.
Max.
VDS = 400V, ID = 0.5A, TC = 75°C, tp = 2s
200
W
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
TO-3P (IXTQ) Outline
IS
VGS = 0V
30
A
A
ISM
VSD
trr
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
IF = IS, -di/dt = 100A/μs, VR = 100V
120
1.5
V
500
ns
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-268 (IXTT) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTH30N50L2 IXTQ30N50L2
IXTT30N50L2
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ T = 25ºC
J
@ T = 25ºC
J
30
27
24
21
18
15
12
9
80
70
60
50
40
30
20
10
0
VGS = 20V
12V
10V
VGS = 20V
14V
12V
9V
10V
8V
7V
9V
8V
6
7V
6V
6V
5V
3
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0
3
6
9
12
15
18
21
24
27
30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
Fig. 4. RDS(on) Normalized to ID = 15A Value
vs. Junction Temperature
@ T = 125ºC
J
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
30
27
24
21
18
15
12
9
VGS = 20V
12V
10V
VGS = 10V
9V
8V
7V
I D = 30A
I D = 15A
6V
5V
6
3
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 15A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
35
30
25
20
15
10
5
VGS = 10V
TJ = 125ºC
TJ = 25ºC
0
0
10
20
30
40
50
60
70
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXTH30N50L2 IXTQ30N50L2
IXTT30N50L2
Fig. 7. Input Admittance
Fig. 8. Transconductance
50
45
40
35
30
25
20
15
10
5
30
27
24
21
18
15
12
9
TJ = - 40ºC
25ºC
TJ = 125ºC
25ºC
- 40ºC
125ºC
6
3
0
0
0
5
10
15
20
25
30
35
40
45
50
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
16
14
12
10
8
90
80
70
60
50
40
30
20
10
0
VDS = 250V
I
I
D = 15A
G = 10mA
6
TJ = 125ºC
4
TJ = 25ºC
2
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
50
100
150
200
250
300
350
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
10,000
1,000
100
1.00
0.10
0.01
= 1 MHz
f
C
iss
C
oss
rss
C
10
0
5
10
15
20
25
30
35
40
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH30N50L2 IXTQ30N50L2
IXTT30N50L2
Fig. 13. Forward-Bias Safe Operating Area
Fig. 14. Forward-Bias Safe Operating Area
@ T = 25ºC
@ T = 75ºC
C
C
100.0
10.0
1.0
100.0
10.0
1.0
RDS(on) Limit
RDS(on) Limit
25µs
100µs
25µs
100µs
1ms
1ms
10ms
10ms
100ms
DC
100ms
DC
T
= 150ºC
T
= 150ºC
J
J
Single Pulse
Single Pulse
0.1
0.1
10
100
1000
10
100
1000
VDS - Volts
VDS - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_30N50L2(7R)4-23-08-A
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