IXTQ30N60L2 [IXYS]
Linear L2 Power MOSFET with extended FBSOA; 直线L2功率MOSFET具有扩展FBSOA
| 型号： | IXTQ30N60L2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Linear L2 Power MOSFET with extended FBSOA |
| 文件： | 总5页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
Linear L2TM Power
MOSFET with extended
FBSOA
VDSS = 600V
ID25 = 30A
RDS(on) ≤ 240mΩ
IXTH30N60L2
IXTQ30N60L2
IXTT30N60L2
N-Channel Enhancement Mode
Avalanche rated
TO-247
Symbol
VDSS
Test Conditions
Maximum Ratings
(TAB)
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
600
600
V
V
VDGR
TO-3P
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
30
80
A
A
G
D
S
(TAB)
IA
TC = 25°C
TC = 25°C
30
2
A
J
EAS
TO-268
PD
TC = 25°C
540
W
TJ
-55 to +150
+150
°C
°C
°C
TJM
Tstg
G
S
-55 to +150
(TAB)
TL
1.6mm (0.063in) from case for 10s
Plastic body for 10s
300
260
°C
°C
TSOLD
Md
Mounting torque (TO-247&TO-3P)
1.13/10
Nm/lb.in.
G = Gate
D
= Drain
S = Source
TAB = Drain
Weight
TO-247
TO-3P
TO-268
6.0
5.5
4.0
g
g
g
Features
z Designed for linear operation
z International standard packages
z Avalanche rated
Symbol
Test Conditions
Characteristic Values
z Molding epoxies meet UL 94 V-0
flammability classification
(TJ = 25°C, unless otherwise specified)
Min.
600
2.5
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 250μA
VGS = ±20V, VDS = 0V
V
V
z Guaranteed FBSOA at 75°C
4.5
Applications
±100 nA
IDSS
VDS = VDSS
VGS = 0V
50 μA
300 μA
z Solid state circuit breakers
z Soft start controls
TJ = 125°C
z Linear amplifiers
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
240 mΩ
z Programmable loads
z Current regulators
© 2009 IXYS CORPORATION, All rights reserved
DS100101(01/09)
IXTH30N60L2 IXTQ30N60L2
IXTT30N60L2
Symbol
Test Conditions
Characteristic Values
TO-247 (IXTH) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
10
14
18
S
Ciss
Coss
Crss
10.7
600
130
nF
∅ P
pF
pF
1
2
3
td(on)
tr
td(off)
tf
43
65
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
123
43
RG = 2Ω (External)
e
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
Qg(on)
Qgs
335
58
nC
nC
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
212
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
RthJC
RthCS
0.23 °C/W
°C/W
(TO-247&TO-3P)
0.25
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Safe Operating Area Specification
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Symbol
SOA
Test Conditions
Min.
Typ.
Max.
VDS = 480V, ID = 0.6A, TC = 75°C, tp = 3s
288
W
e
L
L1
5.20
5.72 0.205 0.225
19.81 20.32
4.50
.780 .800
.177
Source-Drain Diode
Characteristic Values
∅P 3.55
3.65
.140 .144
(TJ = 25°C, unless otherwise specified)
Q
5.89
6.40 0.232 0.252
Symbol
Test Conditions
Min.
Typ.
Max.
R
S
4.32
5.49
.170 .216
242 BSC
6.15 BSC
IS
VGS = 0V
30
A
A
ISM
VSD
trr
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
IF = IS, -di/dt = 100A/μs, VR = 100V
120
1.5
TO-3P (IXTQ) Outline
V
710
ns
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-268 (IXTT) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTH30N60L2 IXTQ30N60L2
IXTT30N60L2
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
30
27
24
21
18
15
12
9
80
70
60
50
40
30
20
10
0
VGS = 20V
14V
12V
VGS = 20V
14V
12V
10V
10V
9V
8V
7V
9V
8V
6
7V
6V
6V
5V
3
0
0
1
2
3
4
5
6
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 15A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
30
27
24
21
18
15
12
9
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 20V
12V
10V
VGS = 10V
9V
8V
7V
I D = 30A
I D = 15A
6V
5V
6
3
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 15A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
35
30
25
20
15
10
5
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
TJ = 125ºC
TJ = 25ºC
0
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All rights reserved
IXYS REF: T_30N60L2(8R)01-20-09-A
IXTH30N60L2 IXTQ30N60L2
IXTT30N60L2
Fig. 7. Input Admittance
Fig. 8. Transconductance
40
35
30
25
20
15
10
5
28
26
24
22
20
18
16
14
12
10
8
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
- 40ºC
6
4
2
0
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGS - Volts
0
5
10
15
20
25
30
35
40
45
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
16
14
12
10
8
90
80
70
60
50
40
30
20
10
0
VDS = 300V
I
I
D = 15A
G = 10mA
6
TJ = 125ºC
4
TJ = 25ºC
2
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
40 80 120 160 200 240 280 320 360 400 440 480
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
10,000
1,000
100
1.000
0.100
0.010
0.001
= 1 MHz
f
C
iss
C
oss
C
rss
0
5
10
15
20
25
30
35
40
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH30N60L2 IXTQ30N60L2
IXTT30N60L2
Fig. 13. Forward-Bias Safe Operating Area
Fig. 14. Forward-Bias Safe Operating Area
@ T = 25ºC
@ T = 75ºC
C
C
100.0
10.0
1.0
100.0
10.0
1.0
R
DS(on)
Limit
R
Limit
DS(on)
25µs
25µs
100µs
100µs
1ms
1ms
10ms
10ms
100ms
DC
100ms
DC
T
T
= 150ºC
= 25ºC
T
T
= 150ºC
= 75ºC
J
J
C
C
Single Pulse
Single Pulse
0.1
0.1
10
100
1000
10
100
1000
VDS - Volts
VDS - Volts
© 2009 IXYS CORPORATION, All rights reserved
IXYS REF: T_30N60L2(8R)01-20-09-A
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