IXTQ36P15P [IXYS]
Power Field-Effect Transistor, 36A I(D), 150V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN;
| 型号： | IXTQ36P15P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 36A I(D), 150V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN |
| 文件： | 总6页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarPTM
Power MOSFETs
IXTA36P15P
IXTP36P15P
IXTQ36P15P
IXTH36P15P
VDSS = - 150V
ID25
= - 36A
RDS(on)
≤ 110mΩ
P-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P (IXTQ)
G
S
G
D
S
G
D
D (Tab)
S
D (Tab)
D (Tab)
TO-247 (IXTH)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
- 150
- 150
V
V
VDGR
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
G
D
S
D (Tab)
D = Drain
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
- 36
- 90
A
A
G = Gate
S = Source
Tab = Drain
IA
TC = 25°C
TC = 25°C
- 36
1.5
A
J
EAS
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
10
V/ns
W
Features
300
z International Standard Packages
z Rugged PolarPTM Process
z Avalanche Rated
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z Low Package Inductance
z Fast Intrinsic Diode
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
z Dynamic dv/dt Rated
Md
Mounting Torque (TO-3P,TO-220 & TO-247)
1.13/10
Nm/lb.in.
N/lb.
z
Low RDS(ON) and QG
FC
Mounting Force (TO-263)
10..65/2.2..14.6
z Low Drain-to-Tab Capacitance
Weight
TO-263
TO-220
TO-3P
2.5
3.0
5.5
6.0
g
g
g
g
Advantages
TO-247
z
Easy to Mount
Space Savings
High Power Density
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
- 150
- 2.5
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = - 250 μA
VDS = VGS, ID = - 250μA
VGS = ±20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
- 4.5
z
±100 nA
z
z
IDSS
-10 μA
- 250 μA
z
TJ = 125°C
Current Regulators
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
110 mΩ
© 2013 IXYS CORPORATION, All Rights Reserved
DS99791D(01/13)
IXTA36P15P IXTP36P15P
IXTQ36P15P IXTH36P15P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = - 25V, f = 1MHz
11
19
S
Ciss
Coss
Crss
3100
610
pF
pF
pF
100
td(on)
tr
td(off)
tf
21
31
36
15
ns
ns
ns
ns
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
Qg(on)
Qgs
55
20
18
nC
nC
nC
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.42 °C/W
(TO-3P, TO-247)
(TO-220)
0.21
0.50
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ. Max.
IS
VGS = 0V
- 36
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = -18A, VGS = 0V, Note 1
-140
- 3.3
trr
QRM
IRM
228
2.0
-17.6
ns
μC
A
IF = -18A, -di/dt = -100A/μs
VR = - 75V, VGS = 0V
Note
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTA36P15P IXTP36P15P
IXTH36P15P IXTQ36P15P
TO-263 Outline
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
Pins: 1 - Gate
2 - Drain
3 - Source
TO-247 Outline
TO-3P Outline
∅ P
1
2
3
e
Pins: 1 - Gate
3 - Source
2 - Drain
Dim.
Millimeter
Inches
Pins: 1 - Gate
3 - Source
2,4 - Drain
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49 .170 .216
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA36P15P IXTP36P15P
IXTQ36P15P IXTH36P15P
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-40
-35
-30
-25
-20
-15
-10
-5
VGS = -10V
- 9V
VGS = -10V
- 9V
- 8V
-7V
- 8V
- 7V
- 6V
- 6V
- 5V
0
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
0
-5
-10
-15
-20
-25
-30
150
150
VDS - Volts
VDS - Volts
= -18A
Fig. 4. RDS(on) Normalized to ID
Value vs.
Fig. 3. Output Characteristics @ TJ = 125ºC
Junction Temperature
-40
-35
-30
-25
-20
-15
-10
-5
2.4
2.0
1.6
1.2
0.8
0.4
VGS = -10V
- 9V
VGS = -10V
- 8V
- 7V
I D = - 36A
I D = -18A
- 6V
- 5V
0
-50
-25
0
25
50
75
100
125
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
VDS - Volts
TJ - Degrees Centigrade
= -18A
Fig. 5. RDS(on) Normalized to ID
Drain Current
Value vs.
Fig. 6. Maximum Drain Current vs.
Case Temperature
-40
3.0
2.6
2.2
1.8
1.4
1.0
0.6
VGS = -10V
-35
-30
-25
-20
-15
-10
-5
TJ = 125ºC
TJ = 25ºC
0
-50
-25
0
25
50
75
100
125
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
TC - Degrees Centigrade
ID - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA36P15P IXTP36P15P
IXTH36P15P IXTQ36P15P
Fig. 7. Input Admittance
Fig. 8. Transconductance
-65
-55
-45
-35
-25
-15
-5
35
30
25
20
15
10
5
TJ = - 40ºC
TJ = - 40ºC
25ºC
125ºC
25ºC
125ºC
0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-7.5
-8.0
-8.5
-4.5
-40
0
-10
-20
-30
-40
-50
-60
-70
-80
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
VDS = - 75V
I
I
D = -18A
G = -1mA
TJ = 125ºC
TJ = 25ºC
0
5
10
15
20
25
30
35
40
45
50
55
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
QG - NanoCoulombs
VSD - Volts
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
10,000
1,000
100
- 100
RDS(on) Limit
25µs
TJ = 150ºC
C = 25ºC
Single Pulse
T
100µs
C
C
iss
1ms
-
10
oss
10ms
C
rss
= 1 MHz
-5
f
100ms
DC
10
- 1
-
-
-
1000
0
-10
-15
-20
-25
-30
-35
10
100
VDS - Volts
VDS - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA36P15P IXTP36P15P
IXTQ36P15P IXTH36P15P
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_36P15P(B5)3-26-08-B
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