IXTQ42N25P [IXYS]
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated; PolarHTTM功率MOSFET N沟道增强型额定雪崩
| 型号： | IXTQ42N25P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated |
| 文件： | 总5页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHTTM
Power MOSFET
IXTA 42N25P
IXTP 42N25P
IXTQ 42N25P
VDSS = 250 V
ID25 = 42 A
RDS(on) ≤ 84 mΩ
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
Symbol
Test Conditions
Maximum Ratings
G
S
VDSS
VDGR
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
250
250
V
V
(TAB)
VGS
VGSM
Continuous
Transient
20
30
V
V
TO-220 (IXTP)
ID25
IDM
TC =25° C
TC = 25° C, pulse width limited by TJM
42
110
A
A
IAR
TC =25° C
42
A
(TAB)
G
D
S
EAR
EAS
TC =25° C
TC =25° C
30
mJ
J
1.0
TO-3P (IXTQ)
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 10 Ω
,
10
V/ns
TC =25° C
300
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G
D
S
(TAB)
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
G = Gate
D = Drain
S = Source
TAB = Drain
Md
Mounting torque
(TO-3P / TO-220)
1.13/10 Nm/lb.in.
Weight
TO-3P
TO-220
TO-263
5.5
4
3
g
g
g
Features
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
l
Symbol
Test Conditions
Characteristic Values
l
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 20 VDC, VDS = 0
250
V
V
3.0
5.5
Advantages
100
nA
l
Easy to mount
Space savings
l
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
l
High power density
TJ = 125° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
84 mΩ
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
DS99157E(12/05)
© 2006 IXYS All rights reserved
IXTA 42N25P IXTP 42N25P
IXTQ 42N25P
Symbol
gfs
Test Conditions
Characteristic Values
TO-3P (IXTQ) Outline
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
12
20
S
Ciss
Coss
Crss
2300
430
pF
pF
pF
115
td(on)
tr
td(off)
tf
24
28
81
30
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 10 Ω (External)
Qg(on)
Qgs
70
17
37
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
0.42°C/W
(TO-3P)
(TO-220)
0.21
0.25
°C/W
°C/W
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
Repetitive
42
A
A
V
TO-220 (IXTP) Outline
ISM
110
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V
200
2.0
ns
QRM
µC
TO-263 (IXTA) Outline
Pins: 1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXTA 42N25P IXTP 42N25P
IXTQ 42N25P
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
º
C
@ 25
º
C
45
40
35
30
25
20
15
10
5
110
100
90
80
70
60
50
40
30
20
10
0
V
= 10V
9V
V
= 10V
GS
GS
9V
8V
8V
7V
7V
6V
5V
6V
5V
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
3
6
9
12
15
18
21
24
27
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
Fig. 4. RDS(on Norm alized to 0.5 ID25
)
@ 125 C
º
Value vs. Junction Tem perature
45
40
35
30
25
20
15
10
5
2.8
2.6
2.4
2.2
2
V
= 10V
9V
GS
V
= 10V
GS
8V
1.8
1.6
1.4
1.2
1
I
= 42A
D
7V
6V
I
= 21A
D
0.8
0.6
0.4
5V
5
0
1
2
3
4
6
7
8
9
-50
-25
0
25
50
75
100 125 150
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
0.5 ID25 Value vs. ID
Fig. 6. Drain Current vs. Case
Tem perature
4.6
4.2
3.8
3.4
3
45
40
35
30
25
20
15
10
5
V
= 10V
GS
T = 125ºC
J
2.6
2.2
1.8
1.4
1
T = 25ºC
J
0.6
0
10 20 30 40 50 60 70 80 90 100 110
-50
-25
0
25
50
75
100 125 150
I D - Amperes
TC - Degrees Centigrade
© 2006 IXYS All rights reserved
IXTA 42N25P IXTP 42N25P
IXTQ 42N25P
Fig. 8. Transconductance
Fig. 7. Input Admittance
70
60
50
40
30
20
10
0
30
27
24
21
18
15
12
9
T = -40ºC
J
25ºC
125ºC
T = 125ºC
J
25ºC
-40ºC
6
3
0
4
0.4
0
4.5
5
5.5
6
VG S - Volts
6.5
7
7.5
8
8.5
1.4
40
0
10
20
30
40
I D - Amperes
50
60
70
80
90
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
120
105
90
75
60
45
30
15
0
10
9
8
7
6
5
4
3
2
1
0
V
= 125V
DS
I
I
= 21A
D
G
= 10mA
T = 125ºC
J
T = 25ºC
J
0.6
0.8
VS D - Volts
1
1.2
0
10
20
30
40
Q G - nanoCoulombs
50
60
70
Fig. 12. Forward-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
100
1000
100
10
f = 1MHz
T = 150ºC
J
C
iss
T
C
= 25ºC
R
Limit
DS(on)
C
C
oss
rss
25µs
100µs
1ms
10ms
DC
10
1
5
10
15
20
VD S - Volts
25
30
35
10
100
VD S - Volts
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 42N25P IXTP 42N25P
IXTQ 42N25P
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
1
10
100
1000
Puls e W idth - millis ec onds
© 2006 IXYS All rights reserved
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