IXTQ32P20T [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXTQ32P20T |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总8页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TrenchPTM
Power MOSFETs
VDSS = - 200V
ID25 = - 32A
IXTA32P20T
IXTP32P20T
IXTQ32P20T
IXTH32P20T
RDS(on)
≤
130mΩ
P-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P (IXTQ)
G
S
G
D
S
G
D (Tab)
D
D (Tab)
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TO-247 (IXTH)
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
- 200
- 200
V
V
VDGR
VGSS
VGSM
Continuous
Transient
+ 15
+ 25
V
V
G
D
S
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
- 32
- 96
A
A
D (Tab)
G = Gate
D
= Drain
Tab = Drain
IA
EAS
TC = 25°C
TC = 25°C
- 32
1
A
J
S = Source
PD
TC = 25°C
300
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
z International Standard Packages
z Avalanche Rated
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic body for 10s
300
260
°C
°C
z Extended FBSOA
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220, TO-247 & TO-3P)
10..65 / 2.2..14.6
N/lb.
Nm/lb.in.
z Fast Intrinsic Diode
1.13 / 10
z
Low RDS(ON) and QG
Weight
TO-263
TO-220
TO-3P
2.5
3.0
5.5
6.0
g
g
g
g
Advantages
TO-247
z
Easy to Mount
Space Savings
High Power Density
z
z
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
(TJ = 25°C, Unless Otherwise Specified)
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = - 250μA
VDS = VGS, ID = - 250μA
VGS = ± 15V, VDS = 0V
VDS = VDSS, VGS = 0V
- 200
V
V
z
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
- 2.0
- 4.0
z
z
±100 nA
z
IDSS
- 25 μA
-1.25 mA
z
TJ = 125°C
z
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
130 mΩ
DS100288B(01/13)
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = - 25V, f = 1MHz
18
30
S
Ciss
Coss
Crss
14.5
565
105
nF
pF
pF
td(on)
tr
td(off)
tf
32
15
57
12
ns
ns
ns
ns
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
185
66
nC
nC
nC
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
45
RthJC
RthCS
0.42 °C/W
TO-220
TO-247 &TO-3P
0.50
0.21
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
- 32
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = - 32A, VGS = 0V, Note 1
-128
-1.3
trr
QRM
IRM
190
1.7
-17.8
ns
μC
A
IF = -16A, -di/dt = -100A/μs
VR = -100V, VGS = 0V
Note
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
TO-263 Outline
TO-3P Outline
Pins: 1 - Gate
3 - Source
2,4 - Drain
TO-220 Outline
TO-247 Outline
Pins: 1 - Gate
3 - Source
2 - Drain
1 = Gate
2 = Drain
3 = Source
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
-120
-100
-80
-60
-40
-20
0
-35
-30
-25
-20
-15
-10
-5
VGS = -10V
- 8V
VGS = -10V
- 8V
- 7V
- 6V
- 7V
- 6V
- 5V
- 5V
- 4V
0
0
-5
-10
-15
-20
-25
-30
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
-4.5
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = -16A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
-35
-30
-25
-20
-15
-10
-5
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = -10V
- 7V
VGS = -10V
- 6V
- 5V
I D = - 32A
I D = -16A
- 4V
0
0
-1
-2
-3
-4
-5
-6
-7
-8
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = -16A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-35
VGS = -10V
-30
-25
-20
-15
-10
-5
TJ = 125ºC
TJ = 25ºC
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100 -110
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
ID - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Fig. 7. Input Admittance
Fig. 8. Transconductance
60
50
40
30
20
10
0
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
TJ = - 40ºC
25ºC
TJ = 125ºC
25ºC
125ºC
- 40ºC
0
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-1.1
-40
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
VGS - Volts
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
VDS = -100V
I
I
D = -16A
G = -1mA
TJ = 125ºC
TJ = 25ºC
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
0
20
40
60
80
100
120
140
160
180
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
-
100,000
10,000
1,000
100
1000
= 1 MHz
f
C
iss
-
100
-10
RDS(on) Limit
25µs
100µs
C
oss
1ms
10ms
100ms
-
1
TJ = 150ºC
DC
C
rss
TC = 25ºC
Single Pulse
-
0.1
-
10
-
-
-
1000
1
10
100
0
-5
-10
-15
-20
-25
-30
-35
VDS - Volts
VDS - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
16.0
15.5
15.0
14.5
14.0
13.5
13.0
16.0
15.5
15.0
14.5
14.0
13.5
13.0
RG = 1Ω , VGS = -10V
RG = 1Ω , VGS = -10V
VDS = -100V
VDS = -100V
25ºC < T < 125ºC
J
- 64A < I < - 32A
D
25
35
45
55
65
75
85
95
105
115
125
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
15
14
13
12
11
10
9
70
65
60
55
50
45
40
160
140
120
100
80
90
80
70
60
50
40
30
20
10
tf
t
d(off) - - - -
RG = 1Ω, VGS = -10V
DS = -100V
t r
td(on) - - - -
TJ = 125ºC, VGS = -10V
VDS = -100V
V
I D = - 64A, - 32A
I D = - 32A
I D = - 64A
60
40
20
0
0
2
4
6
8
10
12
14
16
18
25
35
45
55
65
75
85
95
105
115
125
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
140
300
260
220
180
140
100
60
13.0
12.5
12.0
11.5
11.0
10.5
70
tf
t
d(off) - - - -
tf
t
d(off) - - - -
120
100
80
60
40
20
0
RG = 10Ω, VGS = -10V
TJ = 125ºC, VGS = -10V
VDS = -100V
65
60
55
50
45
VDS = -100V
I D = - 32A
TJ = 25ºC
I D = - 64A
TJ = 125ºC
20
0
2
4
6
8
10
12
14
16
18
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
ID - Amperes
RG - Ohms
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Fig. 19. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_32P20T(A6)10-14-10
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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