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IXTK21N100 [IXYS]

High Voltage MegaMOSTMFETs; 高压MegaMOSTMFETs
IXTK21N100
型号： IXTK21N100
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

High Voltage MegaMOSTMFETs
高压MegaMOSTMFETs

高压
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中文：  中文翻译
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IXTK 21N100 VDSS = 1000 V  
IXTN 21N100 ID25 = 21 A  
High Voltage  
MegaMOSTMFETs  
RDS(on) = 0.55 Ω  
N-Channel,EnhancementMode  
TO-264 AA (IXTK)  
Symbol  
Test Conditions  
MaximumRatings  
IXTK  
IXTN  
VDSS  
VDGR  
TJ = 25°C to 150°C  
1000  
1000  
1000  
1000  
V
V
G
D(TAB)  
D
S
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
±20  
±30  
±20  
±30  
V
V
miniBLOC, SOT-227 B  
E153432  
VGSM  
S
ID25  
IDM  
TC = 25°C, Chip capability  
21  
84  
21  
84  
A
A
G
D
TC = 25°C, pulse width limited by TJM  
PD  
TC = 25°C  
500  
520  
W
G
S
TJ  
-55 ... +150  
150  
-55 ... +150  
300  
°C  
°C  
°C  
S
D
TJM  
Tstg  
S
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TL  
1.6 mm (0.063 in) from case for 10 s  
-
°C  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
VISOL  
50/60Hz, RMS  
ISOL ≤ 1 mA  
t = 1 min  
t = 1 s  
-
-
2500  
3000  
V~  
V~  
I
Md  
Mountingtorque  
Terminalconnectiontorque  
0.9/6  
-
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Features  
Internationalstandardpackages  
JEDECTO-264,epoxymeetUL94V-0  
flammabilityclassification  
Weight  
10  
30  
g
miniBLOC,(ISOTOP-compatible)with  
Aluminiumnitrideisolation  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Lowpackageinductance  
Applications  
Symbol  
Test Conditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
DC-DC converters  
Synchronousrectification  
Batterychargers  
Switched-modeandresonant-mode  
powersupplies  
DC choppers  
VDSS  
VGS = 0 V, ID = 6 mA  
1000  
2
V
V
VGH(th)  
VDS = VGS, ID = 500 µA  
4.5  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
500 µA  
Temperatureandlightingcontrols  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
Advantages  
2
mA  
Easy to mount  
Space savings  
Highpowerdensity  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
0.55  
Ω
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
92808I(5/97)  
1 - 4  
IXTK 21N100  
IXTN 21N100  
Symbol  
gfs  
Test Conditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-264 AA Outline  
VDS = 10 V; ID = 0.5 • ID25, pulse test  
24  
S
Ciss  
Coss  
Crss  
8400  
630  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
110  
td(on)  
tr  
td(off)  
tf  
30  
50  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1 Ω (External),  
100  
40  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
Qg(on)  
Qgs  
250  
60  
nC  
nC  
nC  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
100  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
E
e
25.91 26.16  
19.81 19.96  
5.46 BSC  
RthJC  
RthCK  
TO-264AA  
TO-264AA  
0.25 K/W  
K/W  
.215 BSC  
0.15  
0.05  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
P
20.32 20.83  
.800  
.090  
.820  
.102  
RthJC  
RthCK  
miniBLOC, SOT-227 B  
miniBLOC, SOT-227 B  
0.24 K/W  
K/W  
2.29  
2.59  
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Source-Drain Diode  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IS  
Test Conditions  
miniBLOC, SOT-227 B  
VGS = 0 V  
21  
84  
A
A
V
ISM  
Repetitive; pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IRM  
1000  
20  
ns  
A
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
M4 screws (4x) supplied  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
E
F
4.09  
14.91  
4.29  
15.11  
0.161  
0.587  
0.169  
0.595  
G
H
30.12  
38.00  
30.30  
38.23  
1.186  
1.496  
1.193  
1.505  
J
K
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.481  
0.378  
L
M
0.76  
12.60  
0.84  
12.85  
0.030  
0.496  
0.033  
0.506  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
P
Q
4.95  
26.54  
5.97  
26.90  
0.195  
1.045  
0.235  
1.059  
R
S
3.94  
4.72  
4.42  
4.85  
0.155  
0.186  
0.174  
0.191  
T
U
24.59  
-0.05  
25.07  
0.1  
0.968  
-0.002  
0.987  
0.004  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 4  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXTK 21N100  
IXTN 21N100  
Fig. 1 OutputCharacteristics  
Fig. 2 InputAdmittance  
40  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
TJ = 25°C  
V
GS = 10V  
6V  
TJ = 25°C  
5V  
0
0
0
5
10  
15  
20  
0
1
2
3
4
5
6
7
8
9
10  
VDS - Volts  
VGS - Volts  
Fig. 3 RDS(on) vs. Drain Current  
Fig. 4 TemperatureDependence  
of Drain to Source Resistance  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
TJ = 25°C  
VGS = 10V  
VGS = 15V  
ID = 12A  
0
5
10 15 20 25 30 35 40 45 50  
ID - Amperes  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
Fig. 5 Drain Current vs.  
CaseTemperature  
Fig. 6 TemperatureDependenceof  
BreakdownandThresholdVoltage  
25  
20  
15  
10  
5
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGS(th)  
BVDSS  
0
-50 -25  
0
25 50 75 100 125 150  
TC - Degrees C  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
© 2000 IXYS All rights reserved  
3 - 4  
IXTK 21N100  
IXTN 21N100  
Fig.7 Gate Charge Characteristic Curve  
Fig.8 CapacitanceCurves  
10  
9
8
7
6
5
4
3
2
1
0
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
Ciss  
VDS = 500V  
ID = 12A  
IG = 10mA  
f = 1 MHz  
VDS = 25V  
Coss  
Crss  
0
50  
100  
150  
200  
250  
300  
0
5
10  
15  
20  
Gate Charge - nCoulombs  
VDS - Volts  
Fig.9 Source Current vs. Source  
to Drain Voltage  
40  
35  
30  
25  
20  
15  
10  
5
TJ = 125°C  
TJ = 25°C  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VSD - Volts  
Fig.10 TransientThermalImpedance  
1
0.1  
D=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
0.01  
D = Duty Cycle  
D=0.01  
Single pulse  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2000 IXYS All rights reserved  
4 - 4  

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