IXTA42N15T-TRL [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXTA42N15T-TRL |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总5页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TrenchHVTM
Power MOSFET
VDSS = 150V
ID25 = 42A
RDS(on) ≤ 45mΩ
IXTA42N15T
IXTP42N15T
N-Channel Enhancement Mode
Avalanche Rated
TO-263
Symbol
VDSS
Test Conditions
Maximum Ratings
G
S
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
150
150
V
V
(TAB)
VDGR
VGSM
Transient
± 30
V
TO-220
ID25
IDM
TC = 25°C
42
A
A
TC = 25°C, pulse width limited by TJM
100
IA
TC = 25°C
TC = 25°C
5
A
G
D
EAS
400
mJ
(TAB)
Drain
S
PD
TC = 25°C
200
W
TJ
-55 ... +175
175
°C
°C
°C
G = Gate
D
=
TJM
Tstg
S = Source
TAB = Drain
-55 ... +175
TL
TSOLD
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
300
260
°C
°C
Features
Md
Mounting torque (TO-220)
1.13 / 10
Nm/lb.in.
z International standard packages
z 175°C Operating Temperature
z Avalanche rated
Weight
TO-263
TO-220
2.5
3.0
g
g
Advantages
z
Symbol
Test Conditions
Characteristic Values
Easy to mount
Space savings
High power density
z
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = ± 20V, VDS = 0V
150
2.5
V
V
4.5
Applications
±100 nA
μA
z DC-DC converters
z Battery chargers
IDSS
VDS = VDSS
VGS = 0V
5
z Switched-mode and resonant-mode
power supplies
TJ = 150°C
150 μA
45 mΩ
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
38
z DC choppers
z AC motor drives
z Uninterruptible power supplies
z High speed power switching
applications
DS99799A(11/08)
© 2008 IXYS CORPORATION, All rights reserved
IXTA42N15T
IXTP42N15T
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-263 (IXTA) Outline
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
20
33
S
Ciss
Coss
Crss
1880
255
37
pF
pF
pF
td(on)
tr
td(off)
tf
14
16
50
25
ns
ns
ns
ns
Resistive Switching Times
V
GS = 15V, VDS =0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
21
6.0
6.6
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCH
0.75 °C/W
°C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
IS
VGS = 0V
42
A
A
ISM
VSD
trr
Repetitive, Pulse width limited by TJM
IF = 21A, VGS = 0V, Note 1
126
1.1
TO-220 (IXTP) Outline
V
100
ns
IF = 25A, VGS = 0V, -di/dt = 100A/μs, VR = 50V
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTA42N15T
IXTP42N15T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
45
40
35
30
25
20
15
10
5
120
100
80
60
40
20
0
VGS = 10V
VGS = 10V
9V
9V
8V
8V
7V
6V
7V
6V
5V
5V
8
0
0.0
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
2
4
6
10 12 14 16 18 20 22 24 26 28
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 21A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
45
40
35
30
25
20
15
10
5
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 10V
VGS = 10V
8V
7V
I D = 42A
I D = 21A
6V
5V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 21A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
45
40
35
30
25
20
15
10
5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
TJ = 175ºC
15V
- - - -
TJ = 25ºC
0
10
20
30
40
50
60
70
80
90 100 110
-50
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXTA42N15T
IXTP42N15T
Fig. 7. Input Admittance
Fig. 8. Transconductance
70
60
50
40
30
20
10
0
50
45
40
35
30
25
20
15
10
5
TJ = - 40ºC
25ºC
150ºC
TJ = 150ºC
25ºC
- 40ºC
0
0
10
20
30
40
50
60
70
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
1.2
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
120
100
80
60
40
20
0
VDS = 75V
I D = 25A
I G = 10mA
TJ = 150ºC
TJ = 25ºC
0
2
4
6
8
10
12
14
16
18
20
22
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1,000
100
1.00
0.10
0.01
= 1 MHz
f
C
iss
C
oss
C
rss
10
0.00001
0.0001
0.001
0.01
0.1
1
10
0
5
10
15
20
25
30
35
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - Seconds
IXYS REF: T_42N15T(3G)11-21-08-A
IXTA42N15T
IXTP42N15T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
20
18
16
14
12
10
8
20
18
16
14
12
10
8
RG = 10Ω
VGS = 15V
VDS = 75V
TJ = 25ºC
RG = 10Ω
VGS = 15V
VDS = 75V
I D = 42A
I D = 21A
TJ = 125ºC
20
22
24
26
28
30
32
34
36
38
40
42
25
35
45
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
40
26
24
22
20
18
16
14
12
10
28
58
t f
t
d(off) - - - -
RG = 10Ω, VGS = 15V
t r
t
d(on) - - - -
TJ = 125ºC, VGS = 15V
36
32
28
24
20
16
12
8
26
24
22
20
18
16
14
56
54
52
50
48
46
44
VDS = 75V
VDS = 75V
I D = 21A
I D = 42A, 21A
I D = 42A
10
14
18
22
26
30
34
38
42
46
50
25
35
45
55
65
75
85
95
105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
29
27
25
23
21
19
17
15
58
56
54
52
50
48
46
44
80
70
60
50
40
30
20
10
260
220
180
140
100
60
t f
t
d(off) - - - -
RG = 10Ω, VGS = 15V
t f
t
d(off) - - - -
TJ = 125ºC, VGS = 15V
TJ = 125ºC
TJ = 25ºC
VDS = 75V
VDS = 75V
I D = 21A
TJ = 25ºC
I D = 42A
20
TJ = 125ºC
-20
20
22
24
26
28
30
32
34
36
38
40
42
10
14
18
22
26
30
34
38
42
46
50
RG - Ohms
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_42N15T(3G)11-21-08-A
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