IXTA48N20T [IXYS]
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier; N沟道增强模式额定雪崩快速内在整流器
| 型号： | IXTA48N20T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier |
| 文件： | 总5页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TrenchTM
Power MOSFET
IXTA48N20T
IXTP48N20T
IXTQ48N20T
VDSS
ID25
= 200V
= 48A
RDS(on) ≤ 50mΩ
TO-263 AA (IXTA)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
G
S
D (Tab)
TO-220AB (IXTP)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
200
200
V
V
VGSM
Transient
± 30
V
G
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
48
130
A
A
D
D (Tab)
S
TO-3P (IXTQ)
IA
EAS
TC = 25°C
TC = 25°C
5
A
500
mJ
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
3
V/ns
W
G
D
250
S
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
D (Tab)
= Drain
G = Gate
D
S = Source
Tab = Drain
TL
TSOLD
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
Features
FC
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-3P)
10..65/2.2..14.6
1.13/10
Nm/lb.in
Nm/lb.in
Md
z High Current Handling Capability
z Avalanche Rated
Weight
TO-263
TO-220
TO-3P
2.5
3.0
5.5
g
g
g
z Fast Intrinsic Rectifier
z
Low RDS(on)
Advantages
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, Unless Otherwise Specified)
Min.
200
2.5
Typ.
Max.
Easy to Mount
Space Savings
High Power Density
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z
4.5
Applications
± 100 nA
μA
IDSS
5
z DC-DC Converters
z Battery Chargers
TJ = 150°C
250 μA
z Switch-Mode and Resonant-Mode
Power Supplies
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
40
50 mΩ
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
DS99948A(02/10)
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA48N20T IXTP48N20T
IXTQ48N20T
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-220 (IXTP) Outline
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
26
44
S
Ciss
Coss
Crss
3090
350
40
pF
pF
pF
td(on)
tr
td(off)
tf
20
26
46
28
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω(External)
Qg(on)
Qgs
60
18
13
nC
nC
nC
Pins: 1 - Gate
3 - Source
2 - Drain
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.50 °C/W
RthCS
RthCS
TO-220
TO-3P
0.50
0.25
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
IS
VGS = 0V
48
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 48A, VGS = 0V, Note 1
192
1.2
TO-3P (IXTQ) Outline
trr
130
8.5
ns
A
IF = 0.5 • ID25, VGS = 0V
IRM
QRM
-di/dt = 100A/μs
VR = 0.5 • VDSS
550
nC
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
14.61
2.29
1.02
1.27
0
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTA48N20T IXTP48N20T
IXTQ48N20T
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
140
120
100
80
50
45
40
35
30
25
20
15
10
5
VGS = 10V
8V
VGS = 10V
8V
7V
7V
6V
6V
60
40
20
5V
5V
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
2
4
6
8
10
12
14
16
18
20
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 24A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
50
45
40
35
30
25
20
15
10
5
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 10V
VGS = 10V
8V
7V
I D = 48A
6V
5V
I D = 24A
0
-50
-25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 24A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
55
50
45
40
35
30
25
20
15
10
5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10V
TJ = 175ºC
TJ = 25ºC
0
0
10
20
30
40
50
60
70
80
90
100
110
-50
-25
0
25
50
75
100
125
150
175
TC - Degrees Centigrade
ID - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA48N20T IXTP48N20T
IXTQ48N20T
Fig. 8. Transconductance
Fig. 7. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
TJ = - 40ºC
TJ = - 40ºC
25ºC
150ºC
25ºC
150ºC
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
10
20
30
40
50
60
70
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
140
120
100
80
10
9
8
7
6
5
4
3
2
1
0
VDS =100V
I
I
D = 24A
G = 10mA
60
TJ = 150ºC
40
TJ = 25ºC
20
0
0
5
10
15
20
25
30
35
40
45
50
55
60
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Maximum Transient Thermal Impedance
1.00
0.10
0.01
10,000
1,000
100
C
iss
C
oss
C
rss
= 1 MHz
5
f
10
0
10
15
20
25
30
35
40
0.00001
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA48N20T IXTP48N20T
IXTQ48N20T
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
32
28
24
20
16
12
8
34
30
26
22
18
14
10
6
RG = 5Ω , VGS = 15V
VDS = 100V
RG = 5ꢀ , VGS = 15V
VDS = 100V
TJ = 25ºC
I D = 48A
I D = 24A
TJ = 125ºC
10
15
20
25
30
35
40
45
50
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
38
62
60
58
56
54
52
50
48
46
44
42
22
22
36
34
32
30
28
26
24
22
20
18
tf
t
d(off) - - - -
t r
t
d(on) - - - -
20
18
16
14
12
10
21
20
19
18
17
16
RG = 5ꢀ, VGS = 15V
TJ = 125ºC, VGS = 15V
VDS = 100V
VDS = 100V
I D = 48A
I D = 24A
I D = 24A
I D = 48A
25
35
45
55
65
75
85
95
105
115
125
4
6
8
10
12
14
16
18
20
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
32
30
28
26
24
22
20
18
68
66
58
50
42
34
26
18
160
140
120
100
80
tf
t
d(off) - - - -
t f
t
d(off) - - - -
RG = 5ꢀ, VGS = 15V
64
60
56
52
48
44
40
TJ = 125ºC, VGS = 15V
VDS = 100V
VDS = 100V
TJ = 25ºC
I D = 24A
TJ = 125ºC
I D = 48A
TJ = 125ºC
60
TJ = 25ºC
40
10
15
20
25
30
35
40
45
50
4
6
8
10
12
14
16
18
20
ID - Amperes
RG - Ohms
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_48N20T(4W)02-12-10-A
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