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IXTA48P05T [LITTELFUSE]

Power Field-Effect Transistor,;
IXTA48P05T
型号： IXTA48P05T
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,

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TrenchPTM  
Power MOSFET  
VDSS = - 50V  
ID25 = - 48A  
IXTY48P05T  
IXTA48P05T  
IXTP48P05T  
RDS(on)  
30m  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-252 (IXTY)  
G
S
D (Tab)  
D (Tab)  
TO-263 (IXTA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
- 50  
- 50  
V
V
S
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
15  
25  
V
V
TO-220 (IXTP)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
- 48  
A
A
-150  
G
D
S
D (Tab)  
IA  
EAS  
TC = 25C  
TC = 25C  
- 48  
300  
A
mJ  
PD  
TC = 25C  
150  
W
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
International Standard Packages  
Avalanche Rated  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
Extended FBSOA  
Fast Intrinsic Diode  
Low RDS(ON) and QG  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Easy to Mount  
Space Savings  
High Power Density  
(TJ = 25C, Unless Otherwise Specified)  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250A  
VDS = VGS, ID = - 250A  
VGS = 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
- 50  
V
V
- 2.0  
- 4.5  
Applications  
50 nA  
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
IDSS  
- 10 A  
- 250 A  
TJ = 125C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
30 m  
DS100293C(8/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTY48P05T IXTA48P05T  
IXTP48P05T  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
16  
26  
S
Ciss  
Coss  
Crss  
3660  
495  
pF  
pF  
pF  
215  
td(on)  
tr  
td(off)  
tf  
20  
15  
30  
13  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = - 30V, ID = 0.5 • ID25  
RG = 3(External)  
Qg(on)  
Qgs  
53  
16  
21  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.83C/W  
C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
- 48  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
-192  
-1.5  
trr  
QRM  
IRM  
30  
43.4  
- 2.8  
ns  
nC  
A
IF = 0.5 • ID25, -di/dt = -100A/s  
VR = - 25V, VGS = 0V  
Note 1: Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTY48P05T IXTA48P05T  
IXTP48P05T  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
-48  
-40  
-32  
-24  
-16  
-8  
-180  
-160  
-140  
-120  
-100  
-80  
V
= -10V  
GS  
V
= -10V  
- 9V  
GS  
- 8V  
- 7V  
- 9V  
- 8V  
- 7V  
- 6V  
-60  
- 6V  
-40  
- 5V  
- 4V  
- 5V  
- 4V  
-20  
0
0
0
-5  
-10  
-15  
-20  
-25  
-30  
0
0
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
-1.6  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = - 24A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
-48  
-40  
-32  
-24  
-16  
-8  
V
= -10V  
- 9V  
GS  
V
= -10V  
GS  
- 8V  
- 7V  
I
= - 48A  
D
I
= - 24A  
D
- 6V  
- 5V  
- 4V  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
-1.6  
-1.8  
-2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = - 24A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs. Case Temperature  
1.9  
1.7  
1.5  
1.3  
1.1  
0.9  
-55  
-45  
-35  
-25  
-15  
-5  
V
= -10V  
GS  
T
= 125oC  
J
T
= 25oC  
J
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-20  
-40  
-60  
-80  
-100  
-120  
-140  
TC - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTY48P05T IXTA48P05T  
IXTP48P05T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
-60  
-50  
-40  
-30  
-20  
-10  
0
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40oC  
25oC  
T
J
= 125oC  
25oC  
- 40oC  
125oC  
0
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-6.5  
-7.0  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-160  
-140  
-120  
-100  
-80  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
V
= - 27.5V  
DS  
D
I
I
= - 24A  
= -1mA  
G
-60  
T
J
= 125oC  
-40  
T
J
= 25oC  
-20  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-1.2  
-1.4  
-1.6  
-1.8  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
1,000  
-
= 1 MHz  
f
R
DS(on)  
Limit  
C
iss  
-
25μs  
100  
-10  
100μs  
C
C
oss  
1ms  
10ms  
T = 150oC  
J
100ms  
T
C
= 25oC  
DC  
rss  
Single Pulse  
-
1
-
-
-
100  
1
10  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTY48P05T IXTA48P05T  
IXTP48P05T  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
15.5  
15.0  
14.5  
14.0  
13.5  
16.0  
15.5  
15.0  
14.5  
14.0  
13.5  
13.0  
RG = 3Ω, VGS = -10V  
R
G
= 3Ω, V = -10V  
GS  
V
DS = - 30V  
V
= - 30V  
DS  
TJ = 25oC  
I
= - 48A  
D
I
= - 24A  
D
TJ = 125oC  
-24  
25  
3
-28  
-32  
-36  
-40  
-44  
-48  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
18  
17  
16  
15  
14  
13  
12  
11  
38  
36  
34  
32  
30  
28  
26  
24  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
27  
t f  
td(off)  
t r  
td(on)  
26  
25  
24  
23  
22  
21  
20  
19  
18  
TJ = 125oC, VGS = -10V  
R
G
= 3Ω, V = -10V  
GS  
VDS = - 30V  
V
= - 30V  
DS  
I
= - 24A, - 48A  
D
I
= - 48A, - 24A  
D
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
35  
30  
25  
20  
15  
10  
5
70  
17  
16  
15  
14  
13  
12  
11  
41  
38  
35  
32  
29  
26  
23  
t f  
td(off)  
t f  
td(off)  
60  
50  
40  
30  
20  
10  
R
= 3Ω, VGS = -10V  
T = 125oC, VGS = -10V  
G
J
VDS = - 30V  
VDS = - 30V  
T = 25oC, 125oC  
J
I
= - 24A  
D
I
= - 48A  
D
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
-24  
-28  
-32  
-36  
-40  
-44  
-48  
ID - Amperes  
RG - Ohms  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXTY48P05T IXTA48P05T  
IXTP48P05T  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
TO-252 AA Outline  
TO-263 Outline  
TO-220 Outline  
A
E
b3  
A
C2  
E
E1  
4
c2  
L3  
A
E
oP  
4
A1  
L1  
L2  
D1  
D
H1  
A1  
A2  
Q
H
H
A1  
L4  
1
2
3
1
2
3
D2  
E1  
D
L1  
b2  
L
c
b
b2  
L3  
c
D1  
1 - Gate  
2,4 - Drain  
3 - Source  
e
e
e
e1  
0.43 [11.0]  
L2  
e1  
0  
0
A2  
5.55MIN  
OPTIONAL  
EJECTOR  
PIN  
0.34 [8.7]  
L1  
0.66 [16.6]  
A2  
L
6.50MIN  
4
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
6.40  
2.28  
e
c
3X b  
3X b2  
2.85MIN  
1.25MIN  
e1  
BOTTOM  
VIEW  
1 - Gate  
2,4 - Drain  
3 - Source  
LAND PATTERN RECOMMENDATION  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_48P05T(A2-P05) 10-18-10  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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