IXTA44P15T [IXYS]
P-Channel Enhancement Mode Avalanche Rated; P沟道增强型额定雪崩
| 型号： | IXTA44P15T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | P-Channel Enhancement Mode Avalanche Rated |
| 文件： | 总7页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TrenchPTM
Power MOSFETs
VDSS = - 150V
ID25 = - 44A
IXTA44P15T
IXTP44P15T
IXTQ44P15T
IXTH44P15T
RDS(on)
≤
65mΩ
P-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P (IXTQ)
G
S
G
D
G
D (Tab)
S
D
D (Tab)
S
Tab
Symbol
VDSS
Test Conditions
Maximum Ratings
TO-247 (IXTH)
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
- 150
- 150
V
V
VDGR
VGSS
VGSM
Continuous
Transient
±15
±25
V
V
G
D
S
D (Tab)
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
- 44
A
A
-130
G = Gate
D
= Drain
S = Source
Tab = Drain
IA
EAS
TC = 25°C
TC = 25°C
- 22
1
A
J
PD
TC = 25°C
298
W
Features
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z International Standard Packages
z Avalanche Rated
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
z Extended FBSOA
z Fast Intrinsic Diode
z
Md
Mounting Torque (TO-220, TO-247 & TO-3P)
1.13/10
Nm/lb.in.
Low RDS(ON) and QG
Weight
TO-263
TO-220
TO-3P
2.5
3.0
5.5
6.0
g
g
g
g
Advantages
TO-247
z
Easy to Mount
Space Savings
High Power Density
z
z
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
Applications
(TJ = 25°C, Unless Otherwise Specified)
z
BVDSS
VGS(th)
VGS = 0V, ID = - 250μA
VDS = VGS, ID = - 250μA
-150
- 2.0
V
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
z
- 4.0
V
z
IGSS
IDSS
VGS = ±15V, VDS = 0V
±100 nA
z
z
VDS = VDSS, VGS = 0V
- 15 μA
- 750 μA
z
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
65 mΩ
DS100023B(01/13)
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = - 25V, f = 1MHz
27
45
S
Ciss
Coss
Crss
13.4
675
183
nF
pF
pF
td(on)
tr
td(off)
tf
25
42
50
17
ns
ns
ns
ns
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
175
65
nC
nC
nC
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
58
RthJC
RthCS
0.42 °C/W
TO-220
TO-247 & TO-3P
0.50
0.21
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
- 44
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
-176
-1.3
trr
QRM
IRM
140
0.87
-12.4
ns
μC
A
IF = - 22A, -di/dt = -100A/μs
VR = - 75V, VGS = 0V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
TO-247 Outline
TO-3P Outline
Pins: 1 - Gate
3 - Source
2,4 - Drain
1 = Gate
2 = Drain
3 = Source
TO-263 Outline
TO-220 Outline
Pins: 1 - Gate
3 - Source
2 - Drain
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
-180
-160
-140
-120
-100
-80
-44
-36
-28
-20
-12
-4
VGS = -10V
VGS = -10V
- 9V
- 8V
- 8V
- 7V
- 6V
- 7V
-60
- 6V
- 5V
-40
- 5V
-20
0
0
0
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4
-2.8
0
-5
-10
-15
-20
-25
-30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = - 22A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
-44
-36
-28
-20
-12
-4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = -10V
VGS = -10V
- 8V
- 7V
I D = - 44A
- 6V
- 5V
I D = -22A
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
-4.5
-5
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = - 22A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
-50
-40
-30
-20
-10
0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = -10V
TJ = 125ºC
TJ = 25ºC
-50
-25
0
25
50
75
100
125
150
-20
-40
-60
-80
-100
-120
-140
TC - Degrees Centigrade
ID - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
Fig. 8. Transconductance
Fig. 7. Input Admittance
70
60
50
40
30
20
10
0
-50
-40
-30
-20
-10
0
TJ = - 40ºC
TJ = 125ºC
25ºC
- 40ºC
25ºC
125ºC
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
-140
-120
-100
-80
-60
-40
-20
0
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
VDS = - 75V
D = - 22A
I G = -1mA
I
TJ = 125ºC
TJ = 25ºC
0
20
40
60
80
100
120
140
160
180
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
-1.2
QG - NanoCoulombs
VSD - Volts
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
-
100,000
10,000
1,000
100
1000
= 1 MHz
f
RDS(on) Limit
100
-
25µs
100µs
C
iss
10
-
1ms
C
oss
10ms
-
1
100ms
DC
TJ = 150ºC
C
rss
TC = 25ºC
Single Pulse
-
0.1
0
-5
-10
-15
-20
-25
-30
-35
-40
-
-
-
1000
-
1
10
100
VDS - Volts
VDS - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
50
46
42
38
34
30
26
22
18
48
44
40
36
32
28
24
20
RG = 1Ω, VGS = -10V
VDS = - 75V
TJ = 25ºC
RG = 1Ω, VGS = -10V
VDS = - 75V
I D = - 22A
I D = - 44A
TJ = 125ºC
25
35
45
55
65
75
85
95
105
115
125
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
250
200
150
100
50
100
20
65
60
55
50
45
40
t r
t
d(on) - - - -
tf
t
d(off) - - - -
TJ = 125ºC, VGS = -10V
VDS = - 75V
RG = 1Ω, VGS = -10V
80
60
40
20
0
19
18
17
16
15
VDS = - 75V
I D = - 44A, - 22A
I D = - 22A
I D = - 44A
0
25
35
45
55
65
75
85
95
105
115
125
0
2
4
6
8
10
12
14
16
18
20
TJ - Degrees Centigrade
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
19
18
17
16
15
14
65
60
55
50
45
40
180
160
140
120
100
80
300
tf
t
d(off) - - - -
270
240
210
180
150
120
90
TJ = 125ºC
TJ = 125ºC
TJ = 125ºC, VGS = -10V
VDS = - 75V
I D = - 22A
TJ = 25ºC
I D = - 44A
60
40
tf
t
d(off) - - - -
TJ = 25ºC
RG = 1Ω, VGS = -10V
20
60
VDS = - 75V
0
30
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
0
2
4
6
8
10
12
14
16
18
20
ID - Amperes
RG - Ohms
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA44P15T IXTP44P15T
IXTQ44P15T IXTH44P15T
Fig. 19. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_44P15T(A6)11-05-10-A
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