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IXTA460P2 [IXYS]

PolarP2™ Power MOSFET; PolarP2â ?? ¢功率MOSFET
IXTA460P2
型号： IXTA460P2
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

PolarP2™ Power MOSFET
PolarP2â ?? ¢功率MOSFET
文件： 总6页 (文件大小：159K)
中文：  中文翻译
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PolarP2TM  
Power MOSFET  
VDSS = 500V  
ID25 = 24A  
RDS(on) ≤ 270mΩ  
trr(typ) = 400ns  
IXTA460P2  
IXTP460P2  
IXTQ460P2  
IXTH460P2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-220AB (IXTP)  
TO-263 AA (IXTA)  
TO-3P (IXTQ)  
G
S
G
D
G
D
S
S
D (Tab)  
D (Tab)  
D (Tab)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
TO-247 (IXTH)  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
ID25  
IDM  
TC = 25°C  
24  
50  
A
A
TC = 25°C, Pulse Width Limited by TJM  
G
D
D (Tab)  
S
IA  
EAS  
TC = 25°C  
TC = 25°C  
12  
750  
A
mJ  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
15  
V/ns  
W
480  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Avalanche Rated  
z Fast Intrinsic Diode  
z Dynamic dv/dt Rated  
z Low Package Inductance  
FC  
Md  
Mounting Force TO-263  
10..65 / 2.2..14.6  
Nm/lb.in.  
Nm/lb.in.  
Mounting Torque (TO-220, TO-3P & TO-247)  
1.13 / 10  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Advantages  
TO-247  
z High Power Density  
z Easy to Mount  
z Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
500  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
Applications  
4.5  
z Switch-Mode and Resonant-Mode  
Power Supplies  
z DC-DC Converters  
± 100 nA  
IDSS  
25 μA  
z Laser Drivers  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
TJ = 125°C  
250 μA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
270 mΩ  
DS100216B(06/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTA460P2 IXTP460P2  
IXTQ460P2 IXTH460P2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
14  
24  
S
Ciss  
Coss  
Crss  
2890  
280  
22  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
15  
9
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 10Ω (External)  
30  
5
Qg(on)  
Qgs  
48  
13  
16  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
0.26 °C/W  
RthCS  
RthCS  
TO-220  
TO-3P & TO-247  
0.50  
0.25  
°C/W  
°C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
24  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
96  
1.3  
trr  
400  
19.6  
3.9  
ns  
A
IF = 12A, -di/dt = 100A/μs  
IRM  
QRM  
VR = 100V, VGS = 0V  
μC  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA460P2 IXTP460P2  
IXTQ460P2 IXTH460P2  
TO-3P (IXTQ) Outline  
TO-263 (IXTA) Outline  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Bottom  
Side  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
TO-247 (IXTH) Outline  
TO-220 (IXTP) Outline  
∅ P  
1
2
3
e
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTA460P2 IXTP460P2  
IXTQ460P2 IXTH460P2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
25  
20  
15  
10  
5
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
7V  
VGS = 10V  
7V  
6V  
6V  
5V  
5V  
0
0
0
0
0
1
2
3
4
5
6
7
8
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 12A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
25  
20  
15  
10  
5
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
7V  
VGS = 10V  
6V  
I D = 24A  
I D = 12A  
5V  
4V  
0
5
10  
15  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 12A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
28  
24  
20  
16  
12  
8
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
4
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA460P2 IXTP460P2  
IXTQ460P2 IXTH460P2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
35  
30  
25  
20  
15  
10  
5
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
25ºC  
- 40ºC  
125ºC  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
0
5
10  
15  
20  
25  
30  
35  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
8
VDS = 250V  
I
I
D = 12A  
G = 10mA  
6
4
TJ = 125ºC  
TJ = 25ºC  
2
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100  
10  
10,000  
1,000  
100  
RDS(on) Limit  
25µs  
C
iss  
100µs  
1
C
oss  
1ms  
0.1  
0.01  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
T
= 1 MHz  
5
f
C
10ms  
rss  
10  
0
10  
15  
20  
25  
30  
35  
40  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTA460P2 IXTP460P2  
IXTQ460P2 IXTH460P2  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_460P2(57)6-03-10-A  

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