IXTA3N150HV [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXTA3N150HV |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总4页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage
Power MOSFET
VDSS = 1500V
ID25 = 3A
RDS(on) 7.3
IXTA3N150HV
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-263
Symbol
VDSS
Test Conditions
Maximum Ratings
G
S
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
1500
1500
V
V
VDGR
D (Tab)
VGSS
VGSM
Continuous
Transient
30
40
V
V
G = Gate
D
= Drain
S = Source
Tab = Drain
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
3
9
A
A
IA
EAS
TC = 25C
TC = 25C
3
250
A
mJ
dv/dt
PD
IS IDM, VDD VDSS, TJ 150C
TC = 25C
5
V/ns
W
Features
250
High Voltage package
Fast Intrinsic Diode
Avalanche Rated
Molding Epoxies meet UL 94 V-0
Flammability Classification
High Blocking Voltage
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
C
C
C
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Weight
2.5
g
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
1500
2.5
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
High Voltage Power Supplies
Capacitor Discharge Applications
5.0
Pulse Circuits
100 nA
IDSS
10 A
TJ = 125C
100 A
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
7.3
DS100523B(1/18)
© 2018 IXYS CORPORATION, All Rights Reserved
IXTA3N150HV
Symbol
Test Conditions
Characteristic Values
TO-263 (HV) Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
2.2
3.6
S
Ciss
Coss
Crss
1375
90
pF
pF
pF
30
td(on)
tr
td(off)
tf
19
21
42
25
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5 (External)
PIN: 1 - Gate
2 - Source
3 - Drain
Qg(on)
Qgs
38.6
6.5
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
19.0
RthJC
0.50 C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
3
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
12
1.3
trr
0.9
15.0
6.7
μs
A
IF = ID = 0.5 • ID25, -di/dt = 100A/s
IRM
QRM
VR = 100V, VGS = 0V
μC
Note:
1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTA3N150HV
Fig. 1. Output Characteristics @ TJ = 25oC
Fig. 2. Output Characteristics @ TJ = 125oC
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 10V
7V
GS
V
= 10V
GS
6V
6V
5.5V
5V
5V
4V
4V
0
4
8
12
16
20
24
28
32
0
5
10
15
20
25
30
35
40
4.5
6.0
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs.
Drain Current
Fig. 3. RDS(on) Normalized to ID = 1.5A Value vs.
Junction Temperature
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
= 10V
GS
V
= 10V
GS
T
= 125oC
J
I
= 3A
D
I
= 1.5A
D
T
J
= 25oC
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
TJ - Degrees Centigrade
ID - Amperes
Fig. 5. Maximum Drain Current vs. Case Temperature
Fig. 6. Input Admittance
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 20V
DS
T
J
= 125oC
25oC
- 40oC
3.2
3.6
4.0
4.4
4.8
5.2
5.6
-50
-25
0
25
50
75
100
125
150
VGS - Volts
TC - Degrees Centigrade
© 2018 IXYS CORPORATION, All Rights Reserved
IXTA3N150HV
Fig. 8. Forward Voltage Drop of Intrinsic Diode
Fig. 7. Transconductance
9
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
T
= - 40oC
J
V
= 20V
DS
25oC
125oC
T
J
= 125oC
T
J
= 25oC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
40
10
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD - Volts
ID - Amperes
Fig. 9. Gate Charge
Fig. 10. Capacitance
10,000
1,000
100
10
V
= 750V
DS
= 1 MHz
f
I
I
= 1.5A
D
G
8
6
4
2
0
C
iss
= 10mA
C
oss
C
rss
10
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
40
VDS - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Maximum Transient Thermal Impedance
10
1
R
Limit
DS(on)
25μs
100μs
1
1ms
0.1
10ms
0.1
0.01
100ms
T = 150oC
= 25oC
DC
J
T
C
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
10,000
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_3N150(4N)5-02-16-B
相关型号：
IXTA42N15T
Power Field-Effect Transistor, 42A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
IXYS
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