IXGH32N60A [IXYS]

HiPerFAST IGBT; HiPerFAST IGBT
IXGH32N60A
型号: IXGH32N60A
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

HiPerFAST IGBT
HiPerFAST IGBT

双极性晶体管
文件: 总2页 (文件大小:48K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IXGH 32N60A  
IXGH 32N60AS  
VCES  
IC25  
= 600 V  
= 60 A  
HiPerFASTTM IGBT  
VCE(sat)  
tfi  
= 2.9 V  
= 125 ns  
TO-247 SMD  
(32N60AS)  
Symbol  
TestConditions  
Maximum Ratings  
C (TAB)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
G
E
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-247 AD  
IC25  
IC90  
ICM  
TC = 25°C  
60  
32  
A
A
A
TC = 90°C  
TAB)  
G
TC = 25°C, 1 ms  
120  
C
E
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 33 Ω  
Clamped inductive load, L = 100 µH  
ICM = 64  
@ 0.8 VCES  
A
G = Gate  
E = Emitter  
C = Collector  
TAB = Collector  
PC  
TC = 25°C  
200  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
International standard packages  
JEDEC TO-247 SMD surface  
mountable and JEDEC TO-247 AD  
High current handling capability  
2nd generation HDMOSTM process  
MOS Gate turn-on  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
Weight  
TO-247 AD  
TO-247 SMD  
6
4
g
g
- drive simplicity  
Applications  
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Switched-mode and resonant-mode  
power supplies  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
600  
2.5  
V
V
Advantages  
Space savings (two devices in one  
5
package)  
High power density  
Suitable for surface mounting  
Switching speed for high frequency  
applications  
Easy to mount with 1 screw,TO-247  
(isolated mounting screw hole)  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200 µA  
mA  
1
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
2.9  
VCE(sat)  
IC = IC90, VGE = 15 V  
V
©1995 IXYS Corporation. All rights reserved.  
IXYS Corporation  
92793H (3/96)  
IXYS Semiconductor GmbH  
3540 Bassett Street, Santa Clara CA 95054  
Edisonstr. 15,D-68623 Lampertheim  
Phone: (408) 982-0700, Fax: 408-496-0670  
Phone: +49-6206-503-0 Fax: +49-6206-503627  
IXGH 32N60A  
IXGH 32N60AS  
TO-247 AD Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
P
IC = IC90; VCE = 10 V,  
15  
20  
S
Pulse test, t 300 µs, duty cycle 2 %  
Cies  
Coes  
Cres  
2500  
230  
70  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
e
Qg  
125  
23  
150 nC  
35 nC  
75 nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
50  
td(on)  
tri  
td(off)  
tfi  
Inductive load, TJ = 25°C  
25  
30  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = IC90, VGE = 15 V, L = 100 µH,  
VCE = 0.8 VCES, RG = Roff = 4.7 Ω  
120  
125  
1.8  
200 ns  
175 ns  
mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Eoff  
.780 .800  
.177  
td(on)  
tri  
25  
35  
ns  
ns  
P
3.55  
5.89  
3.65  
.140 .144  
Q
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Eon  
td(off)  
tfi  
1
mJ  
ns  
140  
260  
4.0  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
ns  
,
TO-247 SMD Outline  
Eoff  
mJ  
RthJC  
RthCK  
0.62 K/W  
K/W  
0.25  
IXGH 32N60A and IXGH 32N60AS characteristic curves are located in the  
IXGH 32N60AU1 data sheet.  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Min. Recommended Footprint (Dimensions in inches and mm)  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
1.14  
1.91  
1.40  
2.13  
.045 .055  
.075 .084  
C
D
0.61  
20.80  
0.80  
21.34  
.024 .031  
.819 .840  
E
e
15.75  
5.45  
16.13  
BSC  
.620 .635  
.215 BSC  
L
4.90  
2.70  
2.10  
0.00  
1.90  
5.10  
2.90  
2.30  
0.10  
2.10  
.193 .201  
.106 .114  
.083 .091  
L1  
L2  
L3  
L4  
.00  
.004  
.075 .083  
ØP  
Q
3.55  
5.59  
3.65  
6.20  
.140 .144  
.220 .244  
R
S
4.32  
6.15  
4.83  
BSC  
.170 .190  
.242 BSC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS Semiconductor GmbH  
IXYS Corporation  
3540 Bassett Street, Santa Clara CA 95054  
Edisonstr. 15,D-68623 Lampertheim  
Phone: +49-6206-503-0 Fax: +49-6206-503627  
Phone: (408) 982-0700, Fax: 408-496-0670  

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