IXGH32N60BU1 [IXYS]
HiPerFAST IGBT with Diode; HiPerFAST IGBT与二极管
| 型号： | IXGH32N60BU1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT with Diode |
| 文件： | 总6页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBT
with Diode
IXGH 32N60BU1 VCES
IC25
= 600 V
= 60 A
VCE(sat) = 2.3 V
tfi = 80 ns
Symbol
TestConditions
Maximum Ratings
TO-247 AD
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
600
600
V
V
(TAB)
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
G = Gate,
C = Collector,
TAB = Collector
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
60
32
120
A
A
A
E = Emitter,
SSOA
V
= 15 V, T = 125°C, RG = 33 Ω
I
= 64
A
CGlaE mped indVuJctive load, L = 100 µH
TC = 25°C
@ 0C.8M VCES
200
Features
(RBSOA)
z
International standard packages
PC
W
JEDEC TO-247 SMD
z
High frequency IGBT and antiparallel
FRED in one package
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z
z
z
High current handling capability
Newest generation HDMOSTM process
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
MOS Gate turn-on
- drive simplicity
Md
Mounting torque, TO-247 AD
1.13/10 Nm/lb.in.
Applications
z
Weight
6
g
AC motor speed control
z
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
z
z
z
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Advantages
z
Space savings (two devices in one
package)
BVCES
VGE(th)
IC = 750µA, VGE = 0 V
IC = 250 µA, VCE = VGE
600
2.5
V
z
High power density
Very fast switching speeds for high
frequency applications
5.0
V
z
ICES
VCE = 0.8 • VCES
VGE = 0 V
T = 25°C
500
8
µA
TJJ = 125°C
mA
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
V
VCE(sat)
IC = IC90, VGE = 15 V
2.3
DS95567C(02/03)
© 2003 IXYS All rights reserved
IXGH32N60BU1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; V = 10 V,
15
25
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %
P
Cies
Coes
Cres
2700
270
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
QG
QGE
QGC
110
23
40
150 nC
35 nC
75 nC
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
e
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
25
20
100
80
ns
ns
200 ns
150 ns
1.2 mJ
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
0.6
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
td(on)
tri
Eon
td(off)
tfi
25
25
1
120
120
ns
ns
mJ
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 µH
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
.780 .800
.177
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
,
Eoff
1.2
mJ
RthJC
RthCK
0.62 K/W
K/W
0.25
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
IF = I , V = 0 V,
1.6
V
PulsCe90testG,Et ≤ 300 µs, duty cycle d ≤ 2 %
IRM
trr
IF = I , VGE = 0 V, -diF/dt = 240 A/µs
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJJ = 25°C
10
15
A
VR =C3960 0 V
T = 125°C 150
ns
35
50 ns
1 K/W
RthJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
IXGH32N60BU1
100
80
60
40
20
0
200
160
120
80
TJ = 25°C
VGE = 15V
13V
TJ = 25°C
VGE = 15V
11V
9V
13V
11V
9V
7V
7V
5V
40
5V
0
0
2
4
6
8
10
0
1
2
3
4
5
6
7
VCE - Volts
Fig. 2. Extended Output Characteristics
VCE - Volts
Fig. 1. Saturation Voltage Characteristics
1.75
1.50
1.25
1.00
0.75
100
80
60
40
20
0
TJ = 125°C
VGE = 15V
IC = 64A
IC = 32A
IC = 16A
25
50
75
100
125
150
0
1
2
3
4
5
6
7
VCE - Volts
TJ - Degrees C
Fig. 3. Saturation Voltage Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
100
80
60
40
20
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
V
CE = 10V
VGE(th)
= 250µA
IC
BVCES
IC = 250µA
TJ =125°C
TJ = 25°C
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150
VGE - Volts
Fig. 5. Admittance Curves
TJ - Degrees C
Fig. 6. Temperature Dependence of BVDSS & VGE(th)
© 2003 IXYS All rights reserved
IXGH32N60BU1
5
4
3
2
1
0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
TJ = 125°C
IC = 32A
TJ = 125°C
RG = 10Ω
E(ON)
E(ON)
3
E(OFF)
E(OFF)
2
1
0
0
10
20
30
40
50
60
0
20
40
IC - Amperes
60
80
RG - Ohms
Fig. 7. Dependence of tfi and EOFF on IC.
Fig. 8. Dependence of tfi and EOFF on RG.
15
12
9
100
10
1
IC = 32A
VCE = 300V
TJ = 125°C
RG = 4.7Ω
dV/dt < 5V/ns
6
3
0
0.1
0
25
50
75
100
125
150
0
100
200
300
400
500
600
Qg - nanocoulombs
VCE - Volts
Fig. 9. Gate Charge
Fig.10.Turn-offSafeOperatingArea
1
0.1
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D = Duty Cycle
0.01
0.001
Single pulse
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. TransientThermalResistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
IXGH32N60BU1
Fig.12MaximumForwardVoltageDrop
Fig.13 Peak Forward Voltage VFR and
ForwardRecoveryTimetFR
100
80
60
40
20
0
25
20
15
10
5
1000
800
600
400
200
0
TJ = 125°C
IF = 37A
TJ = 150°C
TJ = 100°C
TJ = 25°C
VFR
tfr
0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
Voltage Drop - Volts
diF /dt - A/µs
Fig.14 JunctionTemperatureDependence
off IRM and Qr
Fig.15 ReverseRecoveryChargee
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4
3
2
1
0
TJ = 100°C
VR = 350V
IF = 30A
max.
IRM
typ.
IF = 60A
Qr
IF = 30A
IF = 15A
0
40
80
120
160
1
10
100
diF /dt - A/µs
1000
TJ - Degrees C
Fig.16 PeakReverseRecoveryCurrent
Fig.17 ReverseRecoveryTime
40
30
20
10
0
0.8
0.6
0.4
0.2
0.0
IF = 30A
max.
TJ = 100°C
IF = 30A
TJ = 100°C
VR = 350V
VR = 350V
max.
typ.
IF = 60A
typ.
IF = 60A
IF = 30A
IF = 15A
IF = 30A
IF = 15A
200
400
600
0
200
400
600
diF /dt - A/µs
diF /dt - A/µs
© 2003 IXYS All rights reserved
IXGH32N60BU1
Fig.18DiodeTransientThermalresistancejunctiontocase
1.00
0.10
0.01
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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