IXGH32N60CD1 [IXYS]

HiPerFAST IGBT with Diode; HiPerFAST IGBT与二极管


型号：	IXGH32N60CD1
厂家：	IXYS CORPORATION
描述：	HiPerFAST IGBT with Diode HiPerFAST IGBT与二极管二极管双极性晶体管
文件：	总5页 (文件大小：164K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HiPerFAST^TMIGBT

with Diode

IXGH 32N60CD1

IXGT 32N60CD1

V_CES

I_C25

= 600 V

= 60 A

V_CE(SAT)typ= 2.1 V

t_fi(typ)

= 55 ns

Light Speed Series

TO-247AD(IXGH)

Symbol

TestConditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GE= 1 MΩ

600

V_GES

V_GEM

Continuous

Transient

±20

±30

C (TAB)

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1 ms

120

TO-268 (D3) ( IXGT)

SSOA

= 15 V, T = 125°C, R_G= 10 Ω

I_CM= 64

(RBSOA)

C^Gla^Emped ind^Vu^Jctive load @ 0.8 V_CES

C (TAB)

P_C

T_C= 25°C

200

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate

C = Collector

E = Emitter

Maximum Lead and Tab temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Features

M_d

Mounting torque, TO-247 AD

1.13/10 Nm/lb.in.

International standard TO-247AD

Weight

TO-247 AD

TO-268

package

High current handling capability

Latest generation HDMOS^TMprocess

MOS Gate turn-on

- drive simplicity

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

power supplies

AC motor speed control

BV_CES

V_GE(th)

I_C= 250µA, V_GE= 0 V

I_C= 250 µA, V_CE= V_GE

600

2.5

DC servo and robot drives

5.0

DC choppers

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T = 25°C

200

µA

T_J^J= 125°C

Advantages

High power density

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

Very fast switching speeds for high

frequency applications

V_CE(sat)

I_C= I_C90, V_GE= 15 V

2.1

2.5

High power surface mountable package

97544E (6/02)

IXGH 32N60CD1

IXGT 32N60CD1

Symbol

g_fs

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

TO-247 AD Outline

I_C= I_C90; V_CE= 10 V,

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

C_ies

C_oes

C_res

2700

240

V_CE= 25 V, V_GE= 0 V, f = 1 MHz

I_C= I_C90, V_GE= 15 V, V_CE= 0.5 V_CES

Q_g

Q_ge

Q_gc

110

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

Inductive load, T_J= 25°C

t_d(on)

t_ri

t_d(off)

t_fi

0.32

A₁

A₂

4.7

2.2

5.3

2.54

2.6

.185 .209

.087 .102

.059 .098

I_C= I_C90, V_GE= 15 V

V_CE= 0.8 V_CES, R_G= R_off= 4.7 Ω

b₁

b₂

1.0

1.65

2.87

1.4

2.13

3.12

.040 .055

.065 .084

.113 .123

Remarks: Switching times may

increase for V_CE(Clamp) > 0.8 • V_CES

higher T_Jor increased R_G

E_off

.016 .031

.819 .845

.610 .640

20.80 21.46

15.75 16.26

t_d(on)

t_ri

E_on

t_d(off)

t_fi

110

100

Inductive load, T_J= 125°C

I_C= I_C90, V_GE= 15 V

5.20

19.81 20.32

4.50

5.72 0.205 0.225

.780 .800

.177

V_CE= 0.8 V_CES, R_G= R_off= 4.7 Ω

3.55

5.89

3.65

.140 .144

170 ns

160 ns

6.40 0.232 0.252

Remarks: Switching times may

increase for V_CE(Clamp) > 0.8 • V_CES

higher T_Jor increased R_G

4.32

6.15 BSC

5.49

.170 .216

242 BSC

E_off

0.85 1.25 mJ

R_thJC

R_thCK

0.62 K/W

TO-268 Outline

0.25

K/W

ReverseDiode(FRED)

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Symbol

V_F

TestConditions

min. typ. max.

= I , V = 0 V, Pulse test

T =150°C

T^J_J= 25°C

1.6

2.5

t^F≤ 30^C0⁹⁰µs,^Gd^Euty cycle d ≤ 2 %

I_RM

t_rr

I_F= I_C90, V = 0 V, -di_F/dt = 100 A/µs

I_F^R= 1 A; -di/dt = 100 A/µs; V_R= 30 V T_J^J= 25°C

V = 100 V^GE

T = 100°C 100

Terminals: 1 - Gate

3 - Emitter

2 - Collector

R_thJC

0.9 K/W

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715 6,306,728B1

5,381,025

IXGH 32N60CD1

IXGT 32N60CD1

200

160

120

100

T_J= 25°C

V_GE= 15V

13V

T_J= 25°C

11V

V_GE= 15V

13V

11V

V_CE- Volts

Fig. 1. Output Characteristics

Fig. 2. Extended Output Characteristics

100

1.50

1.25

1.00

0.75

0.50

11V

T_J= 125°C

V_GE= 15V

13V

V_GE= 15V

_C= 64A

_C= 32A

I_C= 16A

100

125

150

V_CE- Volts

T_J- Degrees C

Fig. 4. Temperature Dependence of V_CE(sat)

Fig. 3. High Temperature Output Characteristics

100

10000

1000

100

_CE= 10V

f = 1Mhz

iss

oss

rss

T_J=125°C

T_J= 25°C

10 15 20 25 30 35 40

V_CE-Volts

V_GE- Volts

Fig. 5. Admittance Curves

Fig. 6. CapacitanceCurves

IXGH 32N60CD1

IXGT 32N60CD1

1.00

0.75

0.50

0.25

0.00

T_J= 125°C

E_(OFF)

R_G= 10Ω

I_C= 64A

E_(ON)

E_(OFF)

E_(ON)

E_(OFF)

I_C= 32A

I_C= 16A

E_(ON)

E_(OFF)

R_G- Ohms

I_C- Amperes

Fig. 7. Dependence of E_ONand E_OFFon I_C.

Fig. 8. Dependence of E_ONand E_OFFon R_G.

100

I_C= 32A

V_CE= 300V

T_J= 125°C

R_G= 4.7Ω

dV/dt < 5V/ns

0.1

100

125

100

200

300

400

500

600

Q_g- nanocoulombs

Fig. 9. Gate Charge

V_CE- Volts

Fig.10.Turn-offSafeOperatingArea

D=0.5

D=0.2

0.1

D=0.1

D=0.05

D=0.02

D=0.01

D = Duty Cycle

0.01

Single pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

Fig. 11. TransientThermalResistance

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715 6,306,728B1

5,381,025

IXGH 32N60CD1

IXGT 32N60CD1

1000

T_VJ=100°C

V_R= 300V

T_VJ=100°C

V_R= 300V

I_F= 60A

I_F= 30A

I_F= 15A

800

I_F= 60A

I_F= 30A

I_F= 15A

I_RM

Q_r

I_F

T_VJ=150°C

T_VJ=100°C

600

400

200

T_VJ=25°C

A/µs

-di_F/dt

3 V

V_F

100

1000

200 400 600 800 1000

A/µs

-di_F/dt

Fig. 12 Forward current I_Fversus V_F

Fig. 13 Reverse recovery charge Q_r

versus -di_F/dt

Fig. 14 Peak reverse current I_RM

versus -di_F/dt

2.0

1.00

T_VJ=100°C

I_F= 30A

T_VJ=100°C

V_R= 300V

µs

V_FR

t_fr

t_rr

1.5

K_f

0.75

0.50

0.25

0.00

t_fr

I_F= 60A

I_F= 30A

I_F= 15A

1.0

I_RM

0.5

Q_r

0.0

A/µs

120

160

200 400 600 800 1000

°C

A/µs

di_F/dt

T_VJ

-di_F/dt

Fig. 15 Dynamic parameters Q_r, I_RM

versus T_VJ

Fig. 16 Recovery time t_rrversus -di_F/dt

Fig. 17 Peak forward voltage V_FRand

t_fr

versus di_F/dt

Constants for Z_thJCcalculation:

K/W

R_thi(K/W)

t_i(s)

0.502

0.193

0.205

0.0052

0.0003

0.0162

0.1

Z_thJC

0.01

DSEP 29-06

0.001

0.00001

0.0001

0.001

0.01

0.1

Fig. 18 Transient thermal resistance junction to case

IXGH32N60CD1 [IXYS]

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