IXGH32N60C [IXYS]
HiPerFAST IGBT Lightspeed Series; HiPerFAST IGBT系列光速
| 型号： | IXGH32N60C |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT Lightspeed Series |
| 文件： | 总4页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBT
LightspeedTM Series
IXGH 32N60C
IXGT 32N60C
VCES
IC25
= 600 V
= 60 A
VCE(sat)typ = 2.1 V
tfi typ = 55 ns
TO-268
(IXGT)
Symbol
TestConditions
MaximumRatings
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C; RGE = 1 MW
G
E
C (TAB)
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC110
ICM
TC = 25°C
60
32
A
A
A
TO-247 AD
(IXGH)
TC = 110°C
TC = 25°C, 1 ms
120
TAB)
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 100 mH
ICM = 64
@ 0.8 VCES
A
G
C
E
PC
TC = 25°C
200
W
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Features
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
• Internationalstandardpackages
JEDEC TO-247 and surface
mountableTO-268
Md
Mountingtorque(M3)
1.13/10 Nm/lb.in.
Weight
TO-247 AD
TO-268
6
4
g
g
• Highcurrenthandlingcapability
• Latest generation HDMOSTM process
• MOS Gate turn-on
- drive simplicity
Applications
Symbol
BVCES
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• PFC circuits
• Uninterruptiblepowersupplies(UPS)
• Switched-modeandresonant-mode
powersupplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
IC = 250 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
600
2.5
V
VGE(th)
ICES
5
V
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 150°C
200
1
mA
mA
Advantages
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
V
• High power density
• Very fast switching speeds for high
frequencyapplications
VCE(sat)
IC = IC110, VGE = 15 V
2.1
2.5
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97538B(7/00)
1 - 4
IXGH 32N60C
IXGT 32N60C
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXGH) Outline
IC = IC110; VCE = 10 V,
25
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
2700
190
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
110
22
nC
nC
nC
Qge
Qgc
IC = IC110, VGE = 15 V, VCE = 0.5 VCES
40
td(on)
tri
td(off)
tfi
Inductive load, TJ = 25°C
25
20
ns
ns
ns
ns
mJ
Dim. Millimeter
Inches
Min. Max. Min. Max.
IC = IC110, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 4.7 W
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
85
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
55
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
,
Eoff
0.32
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
td(on)
tri
25
25
ns
ns
Inductive load, TJ = 150°C
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
IC = IC110, VGE = 15 V, L = 100 mH
Eon
td(off)
tfi
0.30
110
105
0.85
mJ
J
K
1.0
1.4 0.040 0.055
V
CE = 0.8 VCES, RG = Roff = 4.7 W
10.8 11.0 0.426 0.433
170 ns
160 ns
1.25 mJ
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
N
1.5 2.49 0.087 0.102
Eoff
RthJC
RthCK
0.62 K/W
K/W
(IXGH32N60C)
0.25
TO-268AA (D3 PAK)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Min. Recommended Footprint
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGH 32N60C
IXGT 32N60C
200
160
120
80
100
80
60
40
20
0
TJ = 25°C
VGE = 15V
VGE = 15V
13V
TJ = 25°C
9V
11V
13V
11V
9V
7V
5V
7V
40
5V
0
0
2
4
6
8
10
0
1
2
3
4
5
VCE - Volts
VCE - Volts
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
100
80
60
40
20
0
1.50
1.25
1.00
0.75
0.50
11V
TJ = 125°C
VGE = 15V
13V
VGE = 15V
9V
I
C = 64A
I
C = 32A
7V
5V
IC = 16A
0
1
2
3
4
5
25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 3. High Temperature Output Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
100
80
60
40
20
0
10000
V
CE = 10V
f = 1Mhz
C
iss
1000
100
10
C
oss
C
rss
TJ =125°C
TJ = 25°C
3
4
5
6
7
8
9
10
0
5
10 15 20 25 30 35 40
VCE-Volts
VGE - Volts
Fig. 5. Admittance Curves
Fig. 6. Capacitance Curves
© 2000 IXYS All rights reserved
3 - 4
IXGH 32N60C
IXGT 32N60C
4
3
2
1
0
8
6
4
2
0
1.00
0.75
0.50
0.25
0.00
4
3
2
1
0
TJ = 125°C
TJ = 125°C
RG = 10
E(OFF)
IC = 64A
E(ON)
E(OFF)
E(ON)
E(ON)
E(OFF)
IC = 32A
IC = 16A
E(ON)
E(OFF)
0
10
20
30
40
50
60
0
20
40
60
80
RG - Ohms
IC - Amperes
Fig. 7. Dependence of EON and EOFF on IC.
Fig. 8. Dependence of EON and EOFF on RG.
16
100
64
IC = 32A
V
CE = 300V
12
8
TJ = 125°C
RG = 4.7
10
1
dV/dt < 5V/ns
4
0
0.1
0
25
50
75
100
125
0
100
200
300
400
500
600
Qg - nanocoulombs
VCE - Volts
Fig. 10. Turn-off Safe Operating Area
Fig. 9. Gate Charge
1
0.1
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D = Duty Cycle
0.01
Single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
4 - 4
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