IXGH32N60B [IXYS]
HiPerFAST IGBT; HiPerFAST IGBT
| 型号： | IXGH32N60B |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBT
IXGH32N60B
VCES
IC25
= 600 V
= 60 A
VCE(sat) = 2.5 V
tfi
= 80 ns
Symbol
TestConditions
MaximumRatings
TO-247 AD
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
TJ = 25°C to 150°C; RGE = 1 MW
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
TAB)
G
C
IC25
IC90
ICM
TC = 25°C
60
32
A
A
A
E
TC = 90°C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TC = 25°C, 1 ms
120
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 33 W
Clamped inductive load, L = 100 mH
ICM = 64
@ 0.8 VCES
A
PC
TC = 25°C
200
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +150
• Internationalstandardpackage
JEDEC TO-247 AD
• Highcurrenthandlingcapability
• Newest generation HDMOSTM process
• MOS Gate turn-on
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Md
Mountingtorque(M3)
1.13/10 Nm/lb.in.
TO-247 AD
Weight
6
g
- drive simplicity
Applications
• PFC circuits
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switched-modeandresonant-mode
powersupplies
BVCES
VGE(th)
IC = 250 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
600
2.5
V
V
5
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
200
1
mA
mA
Advantages
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
V
• High power density
• Very fast switching speeds for high
frequencyapplications
VCE(sat)
IC = IC90, VGE = 15 V
2.5
95566B(7/00)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1 - 2
IXGH32N60B
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXGH) Outline
IC = IC90; VCE = 10 V,
15
20
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
2500
230
70
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
125
23
150 nC
35 nC
75 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
50
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
25
30
ns
ns
Dim. Millimeter
Inches
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 4.7 W
Min. Max. Min. Max.
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
100
80
200 ns
150 ns
1.6 mJ
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
,
,
Eoff
0.8
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
td(on)
tri
25
35
ns
ns
Inductive load, TJ = 125°C
G
H
1.65 2.13 0.065 0.084
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 4.7 W
-
4.5
-
0.177
Eon
td(off)
tfi
0.3
120
120
1.4
mJ
ns
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
ns
N
1.5 2.49 0.087 0.102
Eoff
mJ
RthJC
RthCK
0.62 K/W
K/W
0.25
IXGH 32N60B characteristic curves are located in the IXGH 32N60BU1 data
sheet.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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