IXGH32N170 [IXYS]
High Voltage IGBT; 高压IGBT
| 型号： | IXGH32N170 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage IGBT |
| 文件： | 总5页 (文件大小：578K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXGH 32N170 VCES
IXGT 32N170 IC25
= 1700 V
75 A
High Voltage
IGBT
=
VCE(sat) = 3.3 V
tfi(typ)
= 250 ns
Preliminary Data Sheet
Symbol
TestConditions
Maximum Ratings
TO-268(IXGT)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
1700
V
V
G
VGES
VGEM
Continuous
Transient
20
30
V
V
E
C (TAB)
TAB)
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
75
32
200
A
A
A
TO-247AD(IXGH)
SSOA
V
= 15 V, TVJ = 125°C, RG = 5 Ω
I
= 90
A
(RBSOA)
CGlaE mped inductive load
@ 0C.8M VCES
350
G
C
E
PC
TC = 25°C
W
G = Gate,
E=Emitter,
Features
C = Collector,
TAB = Collector
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z
International standard packages
JEDEC TO-268 and
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
JEDEC TO-247 AD
z
z
Maximum Tab temperature for soldering SMD devices for 10 s
260
°C
High current handling capability
MOS Gate turn-on
Md
Mounting torque (M3)
1.13/10Nm/lb.in.
- drive simplicity
z
z
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Weight
TO-247 AD
TO-268
6
4
g
g
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
BVCES
VGE(th)
I
= 250 µA, VGE = 0 V
1700
3.0
V
z
ICC = 250 µA, VCE = VGE
5.0
V
Switched-mode and resonant-mode
power supplies
ICES
VCE = 0.8 • VCES
VGE = 0 V
T = 25°C
TJJ = 125°C
50
1
µA
Advantages
mA
z
High power density
IGES
VCE = 0 V, VGE = 20 V
IC = IC90, VGE = 15 V
100
3.3
nA
z
Suitable for surface mounting
z
VCE(sat)
T = 25°C
TJJ = 125°C
2.5
3.0
V
V
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98941B(11/03)
© 2003 IXYS All rights reserved
IXGH 32N170
IXGT 32N170
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
gfs
IC = IC90; V = 10 V,
22
30
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %
∅ P
IC(ON)
VGE = 10V, VCE = 10V
120
A
Cies
Coes
Cres
3500
165
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
e
Qg
Qge
Qgc
155
30
51
nC
nC
nC
Dim.
Millimeter
Inches
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Min.
Max.
Min. Max.
A
4.7
2.2
2.2
1.0
1.65
2.87
5.3
2.54
2.6
1.4
2.13
3.12
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
A
A12
td(on)
tri
td(off)
tfi
45
38
270
250
11
ns
ns
500 ns
500 ns
20 mJ
b
Inductive load, TJ = 25°C
b
b12
IC = IC90, VGE = 15 V
VCE = 0.6 VCES, RG = Roff = 2.7 Ω
C
D
E
.4
.8
20.80 21.46
15.75 16.26
Eoff
e
5.20
5.72 0.205 0.225
19.81 20.32
4.50
L
.780 .800
.177
.140 .144
L1
td(on)
tri
Eon
td(off)
tfi
48
42
6.0
360
560
ns
ns
mJ
ns
ns
∅P 3.55
Q
R
S
3.65
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.6 VCES, RG = Roff = 2.7 Ω
5.89
4.32
6.15 BSC
6.40 0.232 0.252
5.49
.170 .216
242 BSC
TO-268 Outline
Eoff
14
mJ
RthJC
0.35 K/W
RthCK
(TO-247)
0.25
K/W
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
Min Recommended Footprint
A
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
A1
A2
b
1.15
1.9
.4
1.45
.045 .057
b2
2.1
.75
.83
C
.65
.016 .026
D
E
13.80 14.00
.543 .551
.624 .632
.524 .535
15.85 16.05
E1
13.3
13.6
e
H
L
5.45 BSC
.215 BSC
.736 .752
.094 .106
18.70 19.10
2.40
1.20
2.70
1.40
L1
.047 .055
L2
L3
L4
1.00
1.15
.039 .045
.010 BSC
0.25 BSC
3.80
4.10
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXGH 32N170
IXGT 32N170
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
64
56
48
40
32
24
16
8
240
210
180
150
120
90
VGE = 17V
15V
VGE = 17V
15V
13V
11V
13V
11V
9V
9V
7V
60
7V
30
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
2
4
6
8
10
12
14
VC E - Volts
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Dependence of VCE(sat) on
Temperature
64
56
48
40
32
24
16
8
1.8
1.6
1.4
1.2
1
VGE = 17V
15V
VGE = 15V
13V
11V
9V
7V
IC = 64A
IC = 32A
IC = 16A
0.8
0.6
0
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100 125 150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emiiter voltage
Fig. 6. Input Admittance
8
7
6
5
4
3
2
1
100
90
80
70
60
50
40
30
20
10
0
TJ = 25ºC
IC = 64A
32A
TJ = 125ºC
25ºC
-40ºC
16A
6
7
8
9
10 11 12 13 14 15 16 17
VG E - Volts
5
6
7
8
9
10
VG E - Volts
© 2003 IXYS All rights reserved
IXGH 32N170
IXGT 32N170
Fig. 7. Transconductance
Fig. 8. Dependence of E on RG
off
25
23
21
19
17
15
13
11
45
40
35
30
25
20
15
10
5
TJ = 125ºC
GE = 15V
VCE = 1020V
V
TJ = -40ºC
IC = 64A
25ºC
125ºC
IC = 32A
IC = 16A
0
0
16
0
16
32
48
64
80
96
0
10
20
30
40
50
I C - Amperes
R G - Ohms
Fig. 10. Dependence of E on
off
Fig. 9. Dependence of Eoff on Ic
Temperature
22
20
18
16
14
12
10
8
22
20
18
16
14
12
10
8
RG = 3Ω
RG = 15Ω
VGE = 15V
VCE = 1020V
RG = 3Ω
RG= 15Ω
- - - - -
- - - - -
IC = 64A
TJ = 125ºC
VGE = 15V
VCE = 1020V
IC = 32A
IC = 16A
TJ = 25ºC
24
32
40
48
56
64
25 35 45 55 65 75 85 95 105 115 125
I C - Amperes
TJ - Degrees Centigrade
Fig. 12. Capacitance
Fig. 11. Gate Charge
15
12
9
10000
1000
100
f = 1 MHz
VCE = 850V
IC= 32A
IG= 10mA
C
ies
C
oes
6
C
res
3
0
10
30
60
90
120
150
0
5
10
15
20
25
30
35
40
VC E - Volts
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXGH 32N170
IXGT 32N170
Fig. 13. Maxim um Transient Therm al Resistance
0.4
0.3
0.2
0.1
0
1
10
100
1000
Pulse Width - milliseconds
© 2003 IXYS All rights reserved
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