IXGH32N170A [IXYS]
High Voltage IGBT; 高压IGBT
| 型号： | IXGH32N170A |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage IGBT |
| 文件： | 总5页 (文件大小：574K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXGH 32N170A
IXGT 32N170A
VCES
IC25
= 1700 V
32 A
High Voltage
IGBT
=
VCE(sat) = 5.0 V
tfi(typ)
=
50 ns
Symbol
TestConditions
Maximum Ratings
TO-268(IXGT)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
1700
V
V
G
VGES
VGEM
Continuous
Transient
20
30
V
V
E
C (TAB)
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
32
21
110
A
A
A
TO-247AD(IXGH)
SSOA
V
= 15 V, TVJ = 125°C, RG = 5Ω
I
= 70
A
CGlaE mped inductive load
@ 0C.8M VCES
TAB)
(RBSOA)
G
C
E
tSC
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω
10
µs
G = Gate,
C = Collector,
TAB = Collector
E=Emitter,
PC
TC = 25°C
350
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
Md
Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in.
300 °C
z
z
High current handling capability
MOS Gate turn-on
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
- drive simplicity
z
z
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Weight
TO-247
TO-268
6
4
g
g
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
Symbol
TestConditions
Characteristic Values
z
DC servo and robot drives
(TJ = 25°C, unless otherwise specified)
z
min. typ. max.
DC choppers
z
Uninterruptible power supplies (UPS)
z
BVCES
VGE(th)
I
= 250 µA, VGE = 0 V
1700
3.0
V
Switched-mode and resonant-mode
ICC = 250 µA, V = VGE
5.0
V
CE
power supplies
ICES
VCE = 0.8 • VCES
VGE = 0 V
T = 25°C
50
2
µA
Note 1 TJJ = 125°C
mA
Advantages
z
High power density
IGES
VCE = 0 V, VGE = 20 V
IC = IC90, VGE = 15 V
100
5.0
nA
z
Suitable for surface mounting
z
VCE(sat)
T = 25°C
TJJ = 125°C
4.0
4.8
V
V
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98942D(09/04)
© 2004 IXYS All rights reserved
IXGH 32N170A
IXGT 32N170A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = I ; VCE = 10 V
Note 2 90
16
26
S
∅ P
Cies
Coes
Cres
3700
180
43
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qg
Qge
Qgc
155
28
49
nC
nC
nC
e
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A12
4.7
2.2
2.2
1.0
1.65
2.87
5.3
2.54
2.6
1.4
2.13
3.12
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
Inductive load, TJ = 25°C
IC = IC25, VGE = 15 V
td(on)
tri
td(off)
tfi
46
57
260
50
ns
ns
500 ns
100 ns
2.6 mJ
A
b
R = 2.7 Ω, VCE = 0.5 VCES
NoG te 3
b
b12
C
D
E
.4
.8
Eoff
1.5
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
19.81 20.32
4.50
.780 .800
.177
td(on)
tri
48
59
ns
ns
mJ
ns
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
L1
∅P 3.55
3.65
.140 .144
Q
5.89
4.32
6.40 0.232 0.252
Eon
4.0
R = 2.7 Ω, VCE = 0.5 VCES
NoG te 3
R
S
5.49
.170 .216
242 BSC
td(off)
300
6.15 BSC
tfi
70
ns
Eoff
2.4
mJ
TO-268 Outline
RthJC
RthCK
0.35 K/W
K/W
(TO-247)
0.25
Notes:1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
A1
A2
b
1.15
1.9
.4
1.45
.045 .057
b2
2.1
.75
.83
C
.65
.016 .026
D
E
13.80 14.00
.543 .551
.624 .632
.524 .535
15.85 16.05
E1
13.3
13.6
e
H
L
5.45 BSC
.215 BSC
.736 .752
.094 .106
18.70 19.10
2.40
1.20
2.70
1.40
L1
.047 .055
L2
L3
L4
1.00
1.15
.039 .045
.010 BSC
0.25 BSC
3.80
4.10
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
oneormoreofthefollowingU.S.patents:
IXGH 32N170A
IXGT 32N170A
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
60
50
40
30
20
10
0
180
160
140
120
100
80
VGE = 17V
15V
VGE = 17V
15V
13V
11V
13V
9V
11V
9V
60
7V
40
20
7V
0
0
0
6
1
2
3
4
5
6
7
8
9
0
2
4
6
8
10 12 14 16 18 20
VC E - Volts
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Dependence of VCE(sat) on
Temperature
60
50
40
30
20
10
0
1.8
1.6
1.4
1.2
1
VGE = 17V
15V
VGE = 15V
13V
11V
IC = 42A
9V
7V
IC = 21A
0.8
0.6
IC = 10.5A
1
2
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100 125 150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emiiter voltage
Fig. 6. Input Admittance
10
9
80
70
60
50
40
30
20
10
0
TJ = 25ºC
8
7
6
IC = 42A
5
TJ = 125ºC
4
25ºC
-40ºC
21A
3
10.5A
2
7
8
9
10 11 12 13 14 15 16 17
4
5
6
7
8
9
VG E - Volts
VG E - Volts
© 2004 IXYS All rights reserved
IXGH 32N170A
IXGT 32N170A
Fig. 7. Transconductance
Fig. 8. Dependence of E on RG
off
8
7
6
5
4
3
2
1
45
40
35
30
25
20
15
10
5
TJ = 125ºC
VGE = 15V
VCE = 850V
TJ = -40ºC
IC = 64A
IC = 32A
25ºC
125ºC
IC = 16A
20
0
0
16
0
10
20
30
40
50
60
70
80
0
5
10
15
25
30
I C - Amperes
R G - Ohms
Fig. 10. Dependence of E on
off
Fig. 9. Dependence of Eoff on Ic
Temperature
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
RG = 3Ω
RG = 15Ω
VGE = 15V
VCE = 850V
RG = 3Ω
RG= 15Ω
- - - - -
- - - - -
VGE = 15V
IC = 64A
VCE = 850V
TJ = 125ºC
IC = 32A
IC = 16A
TJ = 25ºC
24
32
40
48
56
64
25 35 45 55 65 75 85 95 105 115 125
I C - Amperes
TJ - Degrees Centigrade
Fig. 12. Capacitance
Fig. 11. Gate Charge
15
12
9
10000
1000
100
f = 1 MHz
VCE = 850V
IC= 21A
IG= 10mA
C
ies
C
oes
6
C
res
3
0
10
30
60
90
120
150
0
5
10
15
20
25
30
35
40
VC E - Volts
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
oneormoreofthefollowingU.S.patents:
IXGH 32N170A
IXGT 32N170A
Fig. 13. Maxim um Transient Therm al Resistance
1
0.1
0.01
1
10
100
1000
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
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