IXGH32N50BS [IXYS]
HiPerFAST IGBT; HiPerFAST IGBT
| 型号： | IXGH32N50BS |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet
HiPerFASTTM IGBT
IXGH32N50B
IXGH32N50BS
VCES
IC25
= 500 V
= 60 A
VCE(sat) = 2.0 V
tfi
= 80 ns
TO-247 SMD
(32N50BS)
Symbol
TestConditions
Maximum Ratings
C (TAB)
G
TO-247 AD
G
VCES
VCGR
TJ = 25°C to 150°C
500
500
V
V
E
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC90
ICM
TC = 25°C
60
32
A
A
A
TC = 90°C
TAB)
TC = 25°C, 1 ms
120
C
E
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 33 Ω
ICM = 64
@ 0.8 VCES
A
Clamped inductive load, L = 100 µH
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
PC
TC = 25°C
200
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Features
l
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
High current handling capability
Newest generation HDMOSTM process
MOS Gate turn-on
Md
Mounting torque (M3)
1.13/10Nm/lb.in.
Weight
TO-247 AD
6
4
g
g
TO-247 SMD
l
l
l
- drive simplicity
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
l
PFC circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
l
l
BVCES
VGE(th)
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
500
2.5
V
V
l
5
l
l
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
200
1
µA
mA
power supplies
Advantages
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
V
l
High power density
VCE(sat)
IC = IC90, VGE = 15 V
2.0
l
Very fast switching speeds for high
frequency applications
© 1997 IXYS All rights reserved
95564A(4/97)
IXGH32N50B
IXGH32N50BS
TO-247 AD Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
15
20
S
P
Cies
Coes
Cres
2500
230
70
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
125
23
150 nC
35 nC
75 nC
e
Dim.
Millimeter
Inches
Min. Max.
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Min. Max.
50
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
td(on)
tri
td(off)
tfi
Inductive load, TJ = 25°C
25
30
ns
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
IC = IC90, VGE = 15 V, L = 100 µH,
CE = 0.8 VCES, RG = Roff = 4.7 Ω
V
100
80
200 ns
150 ns
1.5 mJ
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
20.80 21.46
15.75 16.26
,
Eoff
0.7
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
td(on)
tri
25
35
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
Eon
td(off)
tfi
0.3
120
120
mJ
ns
R
S
4.32
5.49
.170 .216
242 BSC
6.15 BSC
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
ns
,
TO-247 SMD Outline
Eoff
1.2
mJ
RthJC
RthCK
0.62 K/W
K/W
0.25
1. Gate
2. Collector
3. Emitter
4. Collector
Min. Recommended Footprint (Dimensions in inches and (mm))
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
1.14
1.91
1.40
2.13
.045 .055
.075 .084
C
D
0.61
20.80
0.80
21.34
.024 .031
.819 .840
E
e
15.75
5.45
16.13
BSC
.620 .635
.215 BSC
L
4.90
2.70
2.10
0.00
1.90
5.10
2.90
2.30
0.10
2.10
.193 .201
.106 .114
.083 .091
L1
L2
L3
L4
.00
.004
.075 .083
ØP
Q
3.55
5.59
3.65
6.20
.140 .144
.220 .244
R
S
4.32
6.15
4.83
BSC
.170 .190
.242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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