IXGH16N170_06 [IXYS]
High Voltage IGBT; 高压IGBT
| 型号： | IXGH16N170_06 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage IGBT |
| 文件： | 总5页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXGH 16N170
IXGT 16N170
VCES
IC25
= 1700 V
32 A
High Voltage
IGBT
=
VCE(sat) = 3.5 V
TO-268 (D3-Pak) (IXGT)
Symbol
TestConditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
1700
1700
V
V
G
E
TJ = 25°C to 150°C; RGE = 1 MΩ
C (TAB)
VGES
VGEM
Continuous
Transient
20
30
V
V
TO-247(IXGH)
IC25
IC90
ICM
TC = 25°C
32
16
80
A
A
A
TC = 90°C
TC = 25°C, 1 ms
TAB)
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load
ICM = 40
@ 0.8 VCES
A
G
C
E
G = Gate,
E=Emitter,
C = Collector,
TAB = Collector
PC
TC = 25°C
190
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +150
z International standard packages
JEDEC TO-268 and
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
JEDEC TO-247 AD
Md
Mounting torque (M3)
1.13/10Nm/lb.in.
z High current handling capability
z MOS Gate turn-on
Weight
TO-247 AD
TO-268
6
4
g
g
- drive simplicity
z Rugged NPT structure
z Molding epoxies meet UL 94 V-0
flammability classification
Applications
z Capacitor discharge & pulser circuits
z AC motor speed control
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
z DC servo and robot drives
z DC choppers
Min. Typ. Max.
BVCES
VGE(th)
IC = 250 μA, VGE = 0 V
IC = 250 μA, VCE = VGE
1700
3.0
V
V
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
5.0
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
50
500
μA
μA
Advantages
IGES
VCE = 0 V, VGE = 20 V
IC = IC90, VGE = 15 V
100
3.5
nA
z High power density
VCE(sat)
TJ = 25°C
TJ = 125°C
2.7
3.3
V
V
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98996C(07/06)
© 2006 IXYS CORPORATION All rights reserved
IXGH 16N170
IXGT 16N170
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
TO-247 (IXGH) Outline
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
10
14
65
S
A
∅ P
1
2
3
IC(ON)
VGE = 10V, VCE = 10V
Cies
Coes
Cres
1650
75
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
26
e
Terminals: 1 - Gate
2 - Drain
Tab - Drain
Qg
78
13
24
nC
nC
nC
3 - Source
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
45
48
ns
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 Ω
400
600 ns
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
770 1100 ns
20.80 21.46
15.75 16.26
Eoff
9.3
14 mJ
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
td(on)
tri
48
42
ns
ns
mJ
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
Eon
td(off)
tfi
1.5
R
S
4.32
5.49
.170 .216
242 BSC
VCE = 0.8 VCES, RG = Roff = 10 Ω
6.15 BSC
430
1170
TO-268 (IXGT) Outline (D3-Pak)
Eoff
11.2
mJ
RthJC
0.65 °C/W
RthCS
(TO-247)
0.25
°C/W
Ref: IXYS CO 0052 RA
7,005,734B2
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478B2
IXGH 16N170
IXGT 16N170
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
32
28
24
20
16
12
8
16 0
14 0
12 0
10 0
80
60
40
20
0
VG E = 17V
15V
VG E = 17V
13V
11V
1 5 V
1 3 V
1 1V
9V
7V
9V
7V
4
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
-50
3
2
4
6
8
10
12
14
16
18
150
10
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Temperature Dependence of VCE(sat)
32
28
24
20
16
12
8
2
1. 8
1. 6
1. 4
1. 2
VG E = 17V
15V
VG E = 15V
13V
11V
9V
I C = 32A
7V
I C = 16A
1
4
0.8
0.6
I C = 8A
0
0.5
1.5
2.5
3.5
4.5
5.5
6.5
-25
0
25
50
75
100
125
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emiiter voltage
Fig. 6. Input Admittance
56
48
40
32
24
16
8
10
9
8
7
6
5
4
3
2
1
T J = 25 C
º
I C = 32A
16 A
TJ = 125
25
-40
º
C
º
C
º
C
8A
11
0
5
6
7
8
9
10
12
13
14
15
4
5
6
7
8
9
VGE - Volts
VGE - Volts
© 2006 IXYS CORPORATION All rights reserved
IXGH 16N170
IXGT 16N170
Fig. 8. Dependence of Eoff on RG
Fig. 7. Transconductance
24
22
20
18
16
14
12
10
8
21
18
15
12
9
TJ = -40 C
º
º
25 C
I
C = 32A
125
º
C
TJ = 125 C
º
VG E = 15V
VC E = 1360V
6
I
C = 16A
3
0
0
16
0
8
16
24
32
40
48
56
32
80
0
10
20
30
40
50
60
150
40
R G - Ohms
I C - Amperes
Fig. 9. Dependence of Eoff on IC
Fig. 10. Dependence of Eoff on Temperature
31
28
25
22
19
24
22
20
18
16
14
12
10
RG = 10 Ohms
RG = 50 Ohms - - - - -
TJ = 125 C
º
VG = 15V
E
VG = 15V
VC E = 1360V
VC E = 1360V
E
RG = 50 Ohms
I
= 32A
= 16A
C
RG = 10 Ohms
16
13
I
C
10
7
18
20
22
24
26
28
30
0
25
50
75
100
125
TJ - Degrees Centigrade
I C - Amperes
Fig. 11. Gate Charge
Fig. 12. Capacitance
15
12
9
10 0 0 0
10 0 0
10 0
f = 1M Hz
VC E = 600V
C = 16A
I G = 10mA
I
C
ies
6
C
C
oes
res
3
0
10
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
VCE - Volts
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 16N170
IXGT 16N170
Fig. 13. Reverse-Bias Safe
Operating Area
45
40
35
30
25
20
15
10
5
= 125ºC
T
J
R
= 10Ω
G
dV/dT < 10V/ns
0
100 300 500 700 900 1100 1300 1500 1700
VC E - Volts
Fig. 14. Maximum Transient Thermal Resistance
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS CORPORATION All rights reserved
相关型号：
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