IXGH17N100AU1 [IXYS]
Low VCE(sat) IGBT with Diode High speed IGBT with Diode; 低VCE （ sat）的IGBT与二极管高速IGBT与二极管
| 型号： | IXGH17N100AU1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Low VCE(sat) IGBT with Diode High speed IGBT with Diode |
| 文件： | 总6页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCES
1000 V 34 A 3.5 V
IXGH 17 N100AU1 1000 V 34 A 4.0 V
IC25 VCE(sat)
Low VCE(sat) IGBT with Diode
High speed IGBT with Diode
IXGH 17 N100U1
CombiPacks
Symbol
TestConditions
Maximum Ratings
TO-247 AD
VCES
VCGR
TJ = 25°C to 150°C
1000
1000
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
IC25
IC90
ICM
TC = 25°C
34
17
68
A
A
A
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TC = 90°C
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 82 Ω
Clamped inductive load, L = 100 µH
ICM = 34
@ 0.8 VCES
A
Features
PC
TC = 25°C
150
W
l
International standard package
JEDEC TO-247 AD
IGBT and anti-parallel FRED in one
TJ
-55 ... +150
150
°C
°C
°C
l
TJM
Tstg
package
-55 ... +150
2nd generation HDMOSTM process
Low VCE(sat)
l
l
Md
Mounting torque (M3)
1.13/10 Nm/lb.in.
- for minimum on-state conduction
losses
Weight
6
g
l
l
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode(FRED)
- soft recovery with low IRM
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
l
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
l
l
l
BVCES
VGE(th)
IC = 4.5 mA, VGE = 0 V
1000
2.5
V
V
l
IC = 500 µA, VCE = VGE
5.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
500 µA
mA
Advantages
8
l
Saves space (two devices in one
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
package)
Easy to mount (isolated mounting
screw hole)
Reduces assembly time and cost
l
VCE(sat)
IC = IC90, VGE = 15 V
17N100U1
17N100AU1
3.5
4.0
V
V
l
91754D (3/96)
© 1996 IXYS All rights reserved
IXGH 17N100U1
IXGH 17N100AU1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; VCE = 10 V,
6
15
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
1500
210
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
100
20
120 nC
30 nC
90 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
60
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
100
200
ns
ns
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IC = IC90, VGE = 15 V, L = 300 µH,
V
CE = 0.8 VCES, RG = Roff = 82 Ω
500 1000 ns
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES
17N100U1
17N100AU1
750
450
ns
750 ns
,
Eoff
higher TJ or increased RG
17N100AU1
3
mJ
td(on)
tri
100
200
2.5
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 82 Ω
Eon
td(off)
tfi
mJ
700 1000 ns
Remarks: Switching times
may increase
17N100U1
17N100AU1
1200 2000 ns
750 1000 ns
for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
17N100U1
17N100AU1
8
6
mJ
mJ
RthJC
RthCK
0.83 K/W
K/W
0.25
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V,
2.5
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs
IRM
trr
16
120
35
18
50
A
ns
ns
VR = 540 V
TJ =125°C
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C
RthJC
1 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
IXGH 17N100U1
IXGH 17N100AU1
Fig. 1 Saturation Characteristics
Fig. 2 Output Characterstics
35
30
25
20
15
10
5
150
125
100
75
13V
11V
VGE = 15V
TJ = 25°C
TJ = 25°C
VGE = 15V
13V
9V
11V
9V
7V
50
25
7V
0
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
Fig. 4 Temperature Dependence
of Output Saturation Voltage
10
9
8
7
6
5
4
3
2
1
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
TJ = 25°C
IC = 34A
IC = 34A
I
C = 17A
IC = 17A
IC = 8.5A
IC = 8.5A
5
6
7
8
9
10 11 12 13 14 15
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
VGE - Volts
Fig. 5 Input Admittance
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
35
30
25
20
15
10
5
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGE(th)
VCE= 10V
IC = 250µA
BVCES
IC = 3mA
TJ = 25°C
TJ = 125°C
TJ = - 40°C
0
0
1
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
VCE - Volts
© 1996 IXYS All rights reserved
IXGH 17N100U1
IXGH 17N100AU1
Fig.7 Gate Charge
Fig.8 Turn-Off Safe Operating Area
15
13
11
9
100
10
VCE = 800
IC = 17A
TJ = 125°C
I
G = 10mA
dV/dt < 3V/ns
1
7
5
0.1
0.01
3
1
0
10 20 30 40 50 60 70 80 90 100
Gate Charge - (nC)
0
200
400
600
800
1000
VCE - Volts
Fig.9 Capacitance Curves
2000
1750
1500
1250
1000
750
500
250
0
f = 1MHz
Cies
Coes
Cres
0
5
10
15
20
25
VCE - Volts
Fig.10 Transient Thermal Impedance
1
D=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
D=0.01
D = Duty Cycle
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
IXGH 17N100U1
IXGH 17N100AU1
Fig.11 Maximum Forward Voltage Drop
Fig.12 Peak Forward Voltage VFR and
Forward Recovery Time tFR
100
80
60
40
20
0
50
40
30
20
10
0
1000
800
600
400
200
0
TJ = 125°C
VFR
IF =37A
TJ = 100°C
t
T = 150°C
fr
J
TJ = 25°C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
100
200
300
400
500
600
Voltage Drop - Volts
diF /dt - A/µs
Fig.13Junction Temperature Dependence
off IRM and Qr
Fig.14 Reverse Recovery Chargee
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4
max.
IF = 30A
TJ = 100°C
VR = 540V
3
2
1
0
typ.
IF = 60A
IRM
Qr
IF = 30A
IF = 15A
0
40
80
120
160
1
10
100
diF /dt - A/µs
1000
TJ - Degrees C
Fig.15 Peak Reverse Recovery Current
Fig.16 Reverse Recovery Time
50
40
30
20
10
0
0.8
0.6
0.4
0.2
0.0
max.
IF = 30A
TJ = 100°C
max.
TJ = 100°C
VR = 540V
IF = 30A
VR = 540V
typ.
IF = 60A
IF = 30A
IF = 15A
typ.
IF = 60A
IF = 30A
IF = 15A
200
400
600
0
200
400
600
diF /dt - A/µs
diF /dt - A/µs
© 1996 IXYS All rights reserved
IXGH 17N100U1
IXGH 17N100AU1
Fig.17 Diode Transient Thermal resistance junction to case
1.00
0.10
0.01
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
相关型号：
IXGH20N100A3
Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
IXYS
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