IXGH20N120 [IXYS]
IGBT; IGBT
| 型号： | IXGH20N120 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | IGBT |
| 文件： | 总2页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCES
IC25
= 1200 V
= 40 A
IXGH 20N120
IXGT 20N120
IGBT
VCE(sat) = 2.5 V
tfi(typ)
= 380 ns
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
TO-247(IXGH)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1200
1200
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
D
S
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
40
20
80
A
A
A
TO-268(IXGT)
SSOA
VGE = 15 V, TVJ = 125°C, RG = 47 Ω
ICM = 40
A
(RBSOA)
Clamped inductive load
@ 0.8 VCES
G
E
C (TAB)
PC
TC = 25°C
150
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
•International standard packages
JEDEC TO-247 and TO-268
•High current handling capability
•MOS Gate turn-on
Maximum tab temperature for soldering
260
°C
Md
Mounting torque (TO-247)
1.13/10 Nm/lb.in.
- drive simplicity
Weight
TO-247
TO-268
6
5
g
g
Applications
•AC motor speed control
•DC servo and robot drives
•DC choppers
•Uninterruptible power supplies (UPS)
•Switch-mode and resonant-mode
power supplies
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
BVCES
VGE(th)
IC = 1 mA, VGE = 0 V
IC = 250 µA, VCE = VGE
1200
2.5
V
V
5.0
•Capacitor discharge
ICES
VCE = VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
250
1
µA
mA
Advantages
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
V
•Easy to mount with one screw
•Reduces assembly time and cost
•High power density
VCE(sat)
IC = IC90, VGE = 15 V
2.0
2.5
© 2002 IXYS All rights reserved
DS98966 (11/02)
IXGH 20N120
IXGT 20N120
TO-247
Symbol
TestConditions
Characteristic Values
Min. Typ. Max.
TO-247 Outline
(TJ = 25°C, unless otherwise specified)
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
12
16
S
Cies
Coes
1750
90
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
31
90
pF
IC(ON)
VGE = 10V, VCE = 10V
A
Qg
Qge
Qgc
63
13
26
nC
nC
nC
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
VCE = 800 V, RG = Roff = 47 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
td(on)
tri
td(off)
tfi
28
20
ns
ns
ns
ns
mJ
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
400 800
380 700
6.5 10.5
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
,
,
Eoff
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
td(on)
tri
Eon
td(off)
tfi
30
27
0.90
700
550
9.5
ns
ns
mJ
ns
ns
mJ
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 800 V, RG = Roff = 47 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
e
L
L1
5.20
5.72 0.205 0.225
19.81 20.32
4.50
.780 .800
.177
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
R
4.32
5.49 .170 .216
Eoff
RthJC
RthCK
0.83 K/W
K/W
TO-268 Outline
TO-247
0.25
Min.RecommendedFootprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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